Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Silicon diode

Testing of Diodes, Silicon Controlled Rectifiers, Transistors and Integrated Circuits , PATR 4692 (1974) 25a) T. Shiki et al, Gas-Pro-... [Pg.329]

Diode, silicon rectifier, 1N4001, 1 amp. Jameco, electronics supplier 14859CR 2-10... [Pg.259]

Standard UV/VIS detectors are photomultipliers and silicon diodes. Silicon diodes are smaller and cheaper, whereas photomultipliers have a higher sensitivity. Most research instruments are based on photomultipliers. A recent development is the use of photomultiplier arrays and CCD cameras as in all other spectroscopic methods. [Pg.64]

Diode, silicon, 1N914, glass packagefhi o each) Diode, Zener, 6V, 1N4735, IW Diac ("bidirectional switch"), 6 volts Triac, 400V... [Pg.2]

Transistor, NPN Darlington pair, NPN Piezo transducer Diode, silicon, 1N914 ... [Pg.176]

Silicon diode Silicon anode is positive with respect to cathode. [Pg.351]

The thyristor is a semiconductor device made of germanium or silicon wafers and comprises three or more Junctions, which can be switched from the OFF state to the ON state or vice versa. Basically it is a ptipn junction, as shown in Figure 6.20(a) and can be considered as composed of two transistors with npn and pnpjunctions, as illustrated in Figure 6.20(b). It does not turn ON when it is forward biased, unlike a diode, unless there is a gate firing pulse. Thyristors are forced commutated (a technique... [Pg.114]

Silicon diodes have a very high internal resistance on loading in the transmission direction up to their threshold voltage of about -1-0.7 V. If the threshold voltage is exceeded, the internal resistance decreases. With a nonsymmetrical... [Pg.341]

Fig. 14-8 Circuit diagram for a dc decoupling device with silicon diodes. (KE) insulated cable end sealing, (E) grounding installation, (1) silicon power diodes. Fig. 14-8 Circuit diagram for a dc decoupling device with silicon diodes. (KE) insulated cable end sealing, (E) grounding installation, (1) silicon power diodes.
The construction and action of overvoltage arresters with silicon diodes are described in Section 14.2.2.5 and Fig. 14-8. Smaller diodes can be used for this... [Pg.529]

The exciter is an AC generator with a stator-mounted field. Direct cur rent for the exciter field is provided from an external source, typically u small variable voltage rectifier mounted at the motor starter. Exciter oui put is converted to DC through a three-phase, full-wave, silicon-diode bridge rectifier. Thyristors (silicon-controlled rectifiers) switch the cur rent to the motor field and the motor-starting, field-discharge resistors These semiconductor elements are mounted on heat sinks and assembled on a drum bolted to the rotor or shaft. [Pg.266]

The heart of the energy-dispersive spectrometer is a diode made from a silicon crystal with lithium atoms diffiised, or drifted, from one end into the matrix. The lithium atoms are used to compensate the relatively low concentration of grown-in impurity atoms by neutralizing them. In the diffusion process, the central core of the silicon will become intrinsic, but the end away from the lithium will remain p-type and the lithium end will be n-type. The result is a p-i-n diode. (Both lithium-... [Pg.122]

The silicon diode (photodiode) detector consists of a strip of p-type silicon on the surface of a silicon chip (n-type silicon). By application of a biasing potential with the silicon chip connected to the positive pole of the biasing source, electrons and holes are caused to move away from the p-n junction. This creates a depletion region in the neighbourhood of the junction which in effect becomes a capacitor. When light strikes the surface of the chip, free... [Pg.659]

The start of the solid-state electronic industry is generally recognized as 1947 when Bardeen, Brattain, and Shockley of Bell Telephone Laboratories demonstrated the transistor function with alloyed germanium. The first silicon transistor was introduced in 1954 by Texas Instruments and, in 1956, Bell Laboratories produced the first diffused junction obtained by doping. The first-solid state transistor diodes and resistors had a single electrical function and were (and still are) known as discrete devices. [Pg.345]

In recent years further concepts have been developed for the construction of polymer-based diodes, requiring either two conjugated polymers (PA and poly(A-methyl-pyrrole) 2 > or poly(A-methylpyrrole in a p-type silicon wafer solid-state field-effect transistor By modifying the transistor switching, these electronic devices can also be employed as pH-sensitive chemical sensors or as hydrogen or oxygen sensors 221) in aqueous solutions. Recently a PPy alcohol sensor has also been reported 222). [Pg.34]

Silicon s atomic structure makes it an extremely important semiconductor. Highly purified silicon, doped with such elements as boron, phosphorus, and arsenic, is the basic material used in computer chips, transistors, sUicon diodes, and various other electronic circuits and electrical-current switching devices. Silicon of lesser purity is used in metallurgy as a reducing agent and as an alloying element in steel, brass, and bronze. [Pg.310]

Some properties of the detectors most commonly used for transmission experiments are summarized in Table 3.2. Alternative counters are scintillation detectors based on Nal or plastic material that is attached to a photomultiplier, and solid-state detectors using silicon- or germanium-diodes. [Pg.38]

Solid-state detectors based on silicon- or germanium-diodes possess better resolution than gas counters, particularly when cooled with liquid nitrogen, but they allow only very low count rates. PIN diodes have also recently become available and have been developed for the instruments used in the examination of Martian soils (Sects. 3.3 and 8.3). A very recent development is the so-called silicon-drift detector (SDD), which has very high energy resolution (up to ca. 130 eV) and large sensitive detection area (up to ca. 1 cm ). The SNR is improved by an order of magnitude compared to Si-PIN detectors. Silicon drift detectors may also be used in X-ray florescence spectroscopy, even in direct combination with Mossbauer spectroscopy (see Sects. 3.3 and 8.3). [Pg.39]


See other pages where Silicon diode is mentioned: [Pg.386]    [Pg.1831]    [Pg.164]    [Pg.248]    [Pg.386]    [Pg.1831]    [Pg.164]    [Pg.248]    [Pg.435]    [Pg.355]    [Pg.532]    [Pg.341]    [Pg.343]    [Pg.573]    [Pg.75]    [Pg.257]    [Pg.267]    [Pg.8]    [Pg.123]    [Pg.297]    [Pg.133]    [Pg.658]    [Pg.873]    [Pg.257]    [Pg.363]    [Pg.49]    [Pg.313]    [Pg.346]    [Pg.67]    [Pg.293]    [Pg.606]    [Pg.120]    [Pg.88]   


SEARCH



Decoupling Devices with Silicon Diodes

LIGHT-EMITTING DIODES THERE IS LIFE OUTSIDE OF SILICON

Light-emitting diodes Silicon-based alternating

Semiconductor silicon diodes

Silicon carbide Schottky diode hydrogen sensor

Silicon carbide diode

Silicon diode-array target

Silicon light-emitting diodes

© 2024 chempedia.info