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Decoupling Devices with Silicon Diodes

Silicon diodes have a very high internal resistance on loading in the transmission direction up to their threshold voltage of about -1-0.7 V. If the threshold voltage is exceeded, the internal resistance decreases. With a nonsymmetrical [Pg.341]


Fig. 14-8 Circuit diagram for a dc decoupling device with silicon diodes. (KE) insulated cable end sealing, (E) grounding installation, (1) silicon power diodes. Fig. 14-8 Circuit diagram for a dc decoupling device with silicon diodes. (KE) insulated cable end sealing, (E) grounding installation, (1) silicon power diodes.

See other pages where Decoupling Devices with Silicon Diodes is mentioned: [Pg.341]    [Pg.573]    [Pg.341]    [Pg.341]    [Pg.573]    [Pg.341]    [Pg.343]    [Pg.343]   


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