Influence of Hydrogen on Schottky Diodes

After 1st 4 hours O2 annealing at 500°C After 2nd 4 hours O2 annealing at 500°C After 1st 4 hours H2 anneaiing at 500°C After 2nd 4 hours H2 anneaiing at 500°C 

The difference observed between annealing at 4 hours or 10 minutes for the n-doped material indicates the existence of a hydrogen-induced phenomenon with a high activation energy, whereas the difference for p-type material indicates a phenomenon with lower activation energy. 

Capacitance measurements were performed to investigate the 1/C versus voltage relationship. Measurements were performed at 300°C after annealing the samples in oxygen- or hydrogen-containing ambient. The curves show the same 

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