Schottky diodes MISiC

Since the capacitor, Schottky diode, and transistor all contain an insulating layer under the catalytic metal, they are all referred to in this chapter as field-effect devices. In published literature, the capacitor and diode SiC devices are often referred to as MISiC devices, and the transistor as an MISiC-FET device. 

The SiC Schottky diodes and capacitors that have been processed by the authors were processed on either 6H or 4H substrates (n-type, about 1 x 10 cm ) with a 5-10- m n-type epilayer (2-6 x lO cm" ) [123, 124]. A thermal oxide was grown and holes were etched for the metal contacts. In the case of the Schottky sensors, the SiC surface was exposed to ozone for 10 minutes before deposition of the contact metal. This ozone treatment produces a native silicon dioxide of 10 1 A, as measured by ellipsometry [74, 75]. The MISiC-FET sensors (Figure 2.9) were processed on 4H-SiC, as previously described [125]. The catalytic metal contacts consisted of 10-nm TaSiyiOO-nm Pt, porous Pt, or porous Ir deposited by sputtering or by e-gun. 

Fig. 6. Schematic representation of a MISiC Schottky-diode hydrogen sensor.

Xu, J.P., Lai, P.T., Zhong, D.G., Chan, C.L. (2003). Improved hydrogen-sensitive properties of MISiC Schottky Sensor with thin NO-Grown oxynitride as gate insulator. IEEE Trans, Electron Devices, Vol. 24, No. 1, pp. 13-15 Zangooie, S., Arwin, H., Lundstrom, I. (2000). Ozone treatment of SiC for improved performance of gas sensitive Schottky diodes. Materials Science Forum, Vol. 338-342, pp. 1085-1088... 

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