Diode sensors Schottky-barrier

Schottky diode sensors based on other wide bandgap materials have also been investigated, as previously mentioned. GaN Schottky diodes processed on either the Ga or N face have been examined by Schalwig et al. [11,21]. A Pt/GaN Schottky diode with a barrier height of 1-eV has been shown to reversibly transform into an ohmic contact through exposure to [94]. Kokobun et al. have also investigated Pt-GaN Schottky diodes as hydrogen sensors up to 600°C [15]. 

Schottky-Barrier Diode and Metal-Oxide-Semiconductor Capacitor Gas Sensors Comparison and Performance... 

Schottky-barrier diode and metal-oxide-semiconductor (MOS) capacitor gas sensors have established themselves as extremely sensitive, versatile solid state sensors. 

Potje-Kamloth K (2001) Conducting polymer-based Schottky barrier tmd heterojunction diodes and their sensor application. In Nalwa HS (ed) Handbook of surfaces tmd interfaces of materials, vol 5. Academic, San Diego, CA, pp 445-494... 

Fang, Y. K, Hwang, S. B., Lin, C.Y. Lee, C.C. (1997). Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor. ]. Appl. Phys., Vol. 82, pp. 3143-3146... 

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