Schottky diode growth

Schottky Diode Growth. The electrical properties of the films deposited using SSP 1 (Fig. 6.13) were evaluated by current versus voltage (I-V) measurements recorded for the thin films using thermally evaporated aluminum contacts (10mm2), to make Schottky barrier diodes (see Fig. 6.14). 

Active diamond electronics has not successfully developed. After the demonstration of rudimentary high temperature Schottky diodes and transistors, problems with the deposition of semiconductor quality thin diamond films has limited further development. Imposing step flow growth on homoepitaxial growth requires very expensive synthetic HP/HT diamond crystals cut under a specific angle. 

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