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Dielectric Insulators polyimide

Poly(amic acids) in which the ortho-carboxylic group has been chemically modified to either an ester- or amide moiety have been known for many years. However, their commercial significance was non-existent until very recent applications involving dielectric insulators [48] and photosensitive polyimide precursors [49, 50]. As with many synthetic pathways, there are generally several ways to arrive at the same goal. Similarly, the preparation of derivatized poly(amic acids) can be divided into two general categories ... [Pg.127]

With the increase of the degree of integration of microcircuits, the multilevel interconnect technology becomes inevitable for future VLSI manufacture. Polyimide exhibits superior planarity over stepped structures and is expected to be one of the most promising materials for the dielectric insulation of VLSI s. However, since the smallest via holes so far achieved by wet etching is 3 pm (1), the formation of fine via holes by a dry etch process is needed for the application of polyimide to VLSI having fine metal wiring. [Pg.547]

Polyimide is one of the fastest growing materials in polymers for electronic applications. During the past couple of decades, there has been a tremendous interest in this material for electronic applications. The superior thermal (up to 500 °C) mechanical and electrical properties of polyimide have made its use possible in many high performance applications, from aerospace to microelectronics. In addition, polyimides show very low electrical leakage in surface or bulk and form an excellent interlayer dielectric insulators and excellent step coverage in multilayer IC structures. They... [Pg.80]

Organic polymers have attracted much interest in electrical and electronic applications because of their electrical insulating nature. Polyimides have gained much attention because of their excellent thermal stability and low dielectric constant. Polyimides have found applications in matrix resins for circuit boards, encapsulants, adhesives, passivation coatings, alpha particle barriers, ion implant masks and interlayer dielectrics."10... [Pg.38]

Srisuwan S, Thongyai S, Praserthdam P (2010) Synthesis and characterizatirai of low-dielectric photosensitive polyimide/silica hybrid materials. J Appl Polym Sci 117 2422-2427 Tagam N, Okada M, Hira N, Ohki Y, Tanaka T, finai T, Harada M, Ochi M (2008) Dielectric properties of epoxy/clay nanocomposites—effects of curing agent and clay dispersion method. IEEE Trans Diel Electr Insul 15 24—32... [Pg.262]

DYCOstrate. A different approach to small via creation has been taken by Dyconex AG of Switzerland. After ground and power patterns are formed on the panel, and the panel is oxide-treated, polyimide-backed copper foil is laminated on the panel. Holes in the copper are formed by a chemical etching process, and the insulating polyimide material underneath the holes is removed by plasma etching. PWBs made in such a way are called DYCOstrate. In other, similar technologies, different dielectric materials are used, and they are removed by alkaUne solutions. The rest of the process is similar to that for SLC that is, holes are metallized and a thick copper deposition is made by electroless or galvanic plating, and the circuit pattern is formed by a tent-and-etch process (see Fig. 5.5). [Pg.109]

Additional drawbacks to the use of polyimide insulators for the fabrication of multilevel structures include self- or auto-adhesion. It has been demonstrated that the interfacial strength of polyimide layers sequentially cast and cured depends on the interdiffusion between layers, which in turn depends on the cure time and temperature for both the first layer (Tj) and the combined first and second layers (T2) [3]. In this work, it was shown that unusually high diffusion distances ( 200 nm) were required to achieve bulk strength [3]. For T2 > Tj, the adhesion decreased with increasing T. However, for T2 < Tj and Tj 400 °C, the adhesion between the layers was poor irrespective of T2. Consequently, it is of interest to combine the desirable characteristics of polyimide with other materials in such a way as to produce a low stress, low dielectric constant, self-adhering material with the desirable processabiHty and mechanical properties of polyimide. [Pg.64]

The last 20 years have seen enormous progress in the development of high-performance fluoropolymers. Fluorine-containing polyimides stand out as one of the few types of materials that simultaneously possess outstanding thermal stability and mechanical properties, low dielectric permittivity, and thin-film processability. This combination of properties makes them ideal for use as high-performance insulators in electronic devices. [Pg.233]

Since the invention of integrated circuits (ICs), polyimides as heat-resistant organic polymers have been applied to insulation materials in electronics devices such as flexible printed circuit boards (FPCs), interlayer dielectrics, buffer coatings, and tape automated bonding (TAB). A polyimide thin layer is easily... [Pg.305]

High water absorption is die other problem with insulation materials, because it causes corrosion of metal wiring and instability of electrical properties such as the dielectric constant. Conventional polyimides have relatively high water absorption because of tiie presence of polar imide rings. However, the water absorption decreases when fluorine is introduced into polyimide molecules because of the former s hydrophobic nature. ... [Pg.306]

Because of the high functional values that polyimides can provide, a small-scale custom synthesis by users or toll producers is often economically viable despite high cost, especially for aerospace and microelectronic applications. For the majority of industrial applications, the yellow color generally associated with polyimides is quite acceptable. However, transparency or low absorbance is an essential requirement in some applications such as multilayer thermal insulation blankets for satellites and protective coatings for solar cells and other space components (93). For interlayer dielectric applications in semiconductor devices, polyimides having low and controlled thermal expansion coefficients are required to match those of substrate materials such as metals, ceramics, and semiconductors used in those devices (94). [Pg.405]

In addition to high breakdown strength, the electrical insulators for superconducting magnets must have excellent dielectric properties at cryogenic temperatures. Chant reported the results of measurements on dielectric constant and loss tangent (tan 5) for several polymers over the temperature range from 4.2 to 300 K [83], The variation of dielectric constant of samples as a function of temperature is shown in Fig. 15. The dielectric constants of nonpolar polymers, such as polyethylene, polypropylene and polytetrafluoroethylene, are substantially independent of temperature, whereas those of polar polymers except polyimide decrease by a maximum of 20% as the temperature is reduced. The values of tan 8 at the frequency of 75 cps for nonpolar polymers decreased by... [Pg.136]

In order for a polyimide to be useful as an interlevel dielectric or protective overcoat (passivant), additional demanding property requirements must be met In the case of the passivant, the material must be an excellent electrical insulator, must adhere well to the substrate, and must provide a barrier for transport of chemical species that could attack the underlying device. It has been demonstrated that polyimide filrns can be excellent bulk barriers to contaminant ion motion (such as sodium) [10], but polyimides do absorb moisture [11,12], and if the absorbed moisture affects adhesion to the substrate, then reliability problems can result at sites where adhesion fails. However, in the absence of adhesion failure, the bulk electrical resistance of the polyimide at ordinary device operating temperatures and voltages appears to be high enough to prevent electrochemical corrosion [13]. [Pg.429]

When used as an interlevel dielectric, even greater demands are placed on the polyimide. Because integrated circuit processing includes as a final step a metal sinter at 400 C, the interlevel insulator film must withstand such exposures without degradation of electrical, chemical, or mechanical properties. In addition, the deposition, cure, and etch process must provide for reliable interconnection between the metal layers above and beneath the film (the "via contact") [8]. Issues of ion motion, moisture uptake, and electrical conduction both in bulk and at interfaces must also be considered carefully. [Pg.429]

Along with their excellent high temperature stability, polyimides also possess remarkable electrical properties. A detailed review of the electrical and optical properties of polyimides can be found in Ref. 62. Electrical properties of polyimides were primarily investigated in view of their low dielectric constants and insulating properties. Figure 14 shows the dependence of electrical conductivity of vapor deposited and... [Pg.260]

The use of tailored polymeric materials offers the potential for a significant reduction in the dielectric constant of the insulating layer. Polymers within the polyimide family have received significant attention for this application in the recent literature [2]. This paper reports on the use of new thermosetting polymers derived from bis-benzocyclobutene(bis-BCB) monomers[3,4] for use in multilayer electronic structures [5]. Figure 1 shows two monomers which show particular promise for electronic applications.These are ethylene-linked bisbenzocyclo-butene (BCB-1) and a... [Pg.198]

Graphite fiber reinforced polyimide or epoxy CTE matched to ceramic, patented Boeing process available, can be used as ground plane or heat sink Poor dielectric constant, anisotropy and microcracking problems, relatively thick, vias must be insulated... [Pg.438]

From the area of polymer dielectrics, a sample is presented here using a commercially available and (from many microelectronic applications) well-known high-temperature polyimide. The deposition and the subsequent curing process have been described in Section 18.2.3, resulting in a 190 nm thick insulating film that showed a good chemical resistance towards diluted developer solution and acetone, so that the cathode-sputtered Au drain and source contacts can be structured as described in Section 18.2.1. The 30 nm thick pentacene layer is thermally evaporated at a deposition rate of about 0.1 nm/s and a process pressure of 1 x 10 mbar. [Pg.387]

Thermal tempering of the photosensitive or cross-linked polymer gives the polyimide siloxane which has been previously shown to be an excellent candidate as an insulating polymer in electronics. The use of such a directly patternable polyimide for dielectric and passivation applications, particularly in microelectronics, should become increasingly important as polyimides become more widely accepted in the industry. [Pg.259]


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See also in sourсe #XX -- [ Pg.352 , Pg.363 ]




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