Depth profiling scanning

Ion Implantation Systems. An ion implantation system is used to accelerate ionized atomic or molecular species toward a target sample. The ionized species penetrates the surface of the sample with the resulting depth profile dependent on the implanted species mass, energy, and the sample target s tilt and rotation. An implanter s main components include an ionizer, mass separator, acceleration region, scanning system, and sample holder (168). 

The results shown in Figure 6 above are an example of this mode of analysis, but include additional information on the chemical states of the Si. The third most frequently used mode of analysis is the Auger mapping mode, in which an Auger peak of a particular element is monitored while the primary electron beam is raster scanned over an area. This mode determines the spatial distribution, across the surface, of the element of interest, rather than in depth, as depth profiling does. Of course, the second and third modes can be combined to produce a three-dimensional spatial distribution of the element. The fourth operational mode is just a subset of the third mode a line scan of the primary beam is done across a region of interest, instead of rastering over an area. 

A mass scan is acquired in cases when a survey of all impurities present in a volume of material is needed. Rather than measuring the secondary ion count rates of preselected elements as a fimction of sputtering time the count rates of all secondary ions are measured as a fimction of mass. Because a mass scan is continuously acquired over a mass range, no depth profiling or lateral information is available while operating in this mode. Figure 4 shows a mass scan acquired from a zirconia... 

A variation on depth profiling that can be performed by modern scanning Auger instruments (see Sect. 2.2.6) is to program the incident electron beam to jump from one pre-selected position on a surface to each of many others in turn, with multiplexing at each position. This is called multiple point analysis. Sets of elemental maps acquired after each sputtering step or each period of continuous sputtering can be related to each other in a computer frame-store system to derive a three-dimensional analysis of a selected micro volume. 

CPAA may be employed to determine trace element concentrations in bulk solid material, but its importance in our present context is that it permits the characterization of a thin surface layer, i.e. the mass of the analyte element per surface unit, with a good detection limit and outstanding accuracy. For example the composition of a surface layer (or foil) of known thickness can be determined, or, conversely, the thickness of a surface layer of known concentration. Depth profiling or scanning is not possible, and a disadvantage of the method is that heating occurs during irradiation. It is also not possible to discriminate between different oxidation states of the analyte element or between different compounds. 

The Physical Electronics 680 Nanoprobe employs a field emission electron gun, and this results in a spatial resolution of less than lOnm. Ion bombardment for depth profiling is available in the SAM, and both the electron beam and the ion beam are computer controlled so that depth profiles can be run automatically, and maps and line scan of Auger electron distributions can be generated. 

In addition to surface analytical techniques, microscopy, such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning tunneling microscopy (STM) and atomic force microscopy (AFM), also provide invaluable information regarding the surface morphology, physico-chemical interaction at the fiber-matrix interface region, surface depth profile and concentration of elements. It is beyond the scope of this book to present details of all these microscopic techniques. 

Radiation cross-linking of polyethylene requires considerably less overall energy and less space, and is faster, more efficient, and environmentally more acceptable. Chemically cross-linked PE contains chemicals, which are by-products of the curing system. These often have adverse effects on the dielectric properties and, in some cases, are simply not acceptable. The disadvantage of electron beam cross-linking is a more or less nonuniform dose distribution. This can happen particularly in thicker objects due to intrinsic dose-depth profiles of electron beams. Another problem can be a nonuniformity of rotation of cylindrical objects as they traverse a scanned electron beam. However, the mechanical properties often depend on the mean cross-link density. ... 

EPMA consists of a combination of a scanning electron microscope with several dispersive X-ray spectrometers. This technique is essentially an analysis of X-rays emitted from the sample which is being probed with an electron beam. The method is particularly useful for measuring the surface composition and the depth profile of alloy thin layers. However, it is also relatively poor in detecting light elements. 

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