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Defect-free part

As seen in Subsection 5.2.1, bonds of ultrafine metal particles with oxide supports may become as strong as metal-ligand bonds in common coordination compounds. This happens, in particular, when the support exhibits defect surface sites that are notably more active than the sites on regular, defect-free parts of the surface. Then the question arises if one really can invoke the analogy of metal-ligand and metal-surface interactions. In other words, is the concept of a surface site as a polydentate ligand justified We addressed this noteworthy issue for an organometallic surface complex [183]. [Pg.416]

Chrome plated plastic parts are widely used in the automotive, appliance, plumbing and other industries. While there were early efforts to chrome plate acetal copolymer, it was only recently that adequate adhesion between the resin and the metal coating was obtained. Recent breakthroughs in the acid etching step and in molding technology to obtain defect-free parts have provided an electroplatable acetal copolymer grade. [Pg.122]

In the model [98] it has been assiuned, that nucleus domain with size u is formed in defect-free part of semicrystalline polymer, that is, in crystallite. Within the frameworks of model [1] and in respect to these polymers amorphous phase structure such region is loosely packed matrix, surrounding a local order region (cluster), whose structure is close enough to defect-free polymer structure, postulated by the Flory felt model [16, 17]. In such treatment the value u can be determined as follows [43] ... [Pg.87]

A false belief of many injection molders is that one can achieve this goal of defect-free parts by monitoring the machine parameters. The machine parameters alone do not guarantee the quality of parts, since in the end these are just setting parameters, which do not enable to make any conclusions about, for example, the shrinkage behaviour of a molded part. In the same way, unfilled or overmolded parts can only be detected and sorted out reliably using the machine parameters. [Pg.658]

The delivery of defect-free parts can therefore only be ensured by using cavity pressure and cavity temperature sensors in the mold. [Pg.659]

Fig. 12 Time based amplitude speetra of a defect free casting part... Fig. 12 Time based amplitude speetra of a defect free casting part...
The computer also can leam from a defect-free test piece by rutming such a piece in a readmode. For example, if a drilled hole for lubrication purposes is present at the same location on all parts, the computer will recognise this signal and accept it on all test pieces. The computer will actually be comparing the test piece under scrutiny with standard non-defect master. In addition a reference test piece should be used to check that the specified reference defects really will be detected. This is needed to adjust the settings and sensitivity of the system. [Pg.641]

Quality levels are the result of a ratio of parts defective to parts produced. The current trend is to use parts per million (ppm) but this is not always practical for some processes. Painting processes for instance cannot achieve blemish-free surfaces in the order of one blemish per million parts painted ... [Pg.144]

Fig. 10). With the completion of the structure transition, the current should drop to zero, which is indeed the case except for peak B, where a slight leak current is seen (ascribed to the side reaction Cu++ I c > Cu+). According to the theory by Bewick, Fleischmann and Thirsk (BFT) the transients can be used to distinguish between instantaneous and progressive nucleation [45], A corresponding analysis revealed that the falling part of the transients agrees well with the model for instantaneous nucleation, while the rising part shows a systematic deviation. This was explained by the existence of surface defects on a real electrode in contrast to the ideal case of a defect-free surface assumed in the theoretical model. By including an adsorption term in the BFT theory to account for Cu deposition at defects, the experimentally obtained transients could indeed be reproduced very well [44], We shall return to the important role of surface defects in metal deposition later (sec. 3.2). Fig. 10). With the completion of the structure transition, the current should drop to zero, which is indeed the case except for peak B, where a slight leak current is seen (ascribed to the side reaction Cu++ I c > Cu+). According to the theory by Bewick, Fleischmann and Thirsk (BFT) the transients can be used to distinguish between instantaneous and progressive nucleation [45], A corresponding analysis revealed that the falling part of the transients agrees well with the model for instantaneous nucleation, while the rising part shows a systematic deviation. This was explained by the existence of surface defects on a real electrode in contrast to the ideal case of a defect-free surface assumed in the theoretical model. By including an adsorption term in the BFT theory to account for Cu deposition at defects, the experimentally obtained transients could indeed be reproduced very well [44], We shall return to the important role of surface defects in metal deposition later (sec. 3.2).
In general, these defect-free modulated structures can, to a first approximation, be divided into two parts. One part is a conventional structure that behaves like a normal crystal, but a second part exists that is modulated5 in one, two, or three dimensions. The fixed part of the structure might be, for example, the metal atoms, while the anions might be modulated in some fashion. The primary modulation might be in the position of the atoms, called a displacive modulation (Fig. 4.35a). Displacive modulations sometimes occur when a crystal structure is transforming from one... [Pg.192]

Silicon has been and will most probably continue to be the dominant material in semiconductor technology. Although the defect-free silicon single crystal is one of the best understood systems in materials science, its electrochemistry to many people is still a matter of alchemy. This view is partly a result of the interdisciplinary aspects of the topic Physics meets chemistry at the silicon-electrolyte interface. [Pg.281]

If parts of dendrimers and cascadanes acts as substituents or functional groups of molecules, then they are called dendrons, or - if defect-free - casca-dons. [Pg.15]

TEM examination of GaN crystals by Liliental-Weber et al [27] determined that one of the polar surfaces of high pressure solution-grown GaN crystals (especially for the smaller ones) is often atomically flat (2-3 monolayer step heights present) and that the crystal under this surface is practically free of extended defects. On the opposite surface, a number of extended defects like stacking faults, dislocation loops and Ga microprecipitates were observed. The relative thickness of the defect-containing part usually consists of 10% of the entire thickness of the platelet. [Pg.364]

In these latter studies, strong shockwaves were produced by driving the free edge of the molecular solid with a steadily moving piston as depicted in the lower part of Fig. 3. Two-dimensional simulations were initially carried out to determine the piston driven shock-to-detonation threshold in the perfect crystal. Once this threshold was determined, a crack such as that depicted at the top of Fig. 19 was introduced. Additional simulations were then performed for a series of piston velocities near, but below, the critical piston velocity, Vp, that is necessary to cause detonation in defect-free... [Pg.575]

Figure 4.41 shows two images captured 80 and 600 s after adding the lipase solution. The initially homogeneous, nearly defect-free film shows round depressions, which widen during the first scan shown. After 600 s the film has been in parts eroded and remaining parts of the film can be distinguished. [Pg.234]

The electric conductivity of carbon nanotubes is largely influenced by the presence of defects. Even effects as modest as axial strain with bond expansion change the band structure. Stone-Wales defects and other imperfections diminish the electric conductivity as well. This effect is especially pronounced for defects with two adjacent vacancies. The resistance of a 400 nm long SWNT, for example, increases by a factor of 1000 if the tube bears as little as 0.03% of these double vacancies. Single vacancies, on the other hand, do not cause such dramatic changes. In any case, however, the free path of the electrons is reduced considerably by the defects (in parts down to a few nanometers). Still, due to the multitude of existing conduction channels, this has no large influence on the overall conductivity. [Pg.204]


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See also in sourсe #XX -- [ Pg.634 ]




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