Floating zone technique

Some materials are so reactive that they cannot be zone-melted to a high degree of purity in a container. Floating-zone techniques in which the molten zone is held in place by its own surface tension have been developed by Keck et al. [Phys. Rev., 89, 1297 (1953)]. 

Crystal Growth of Borides 6.7.4.2. Liquid-Phase Methods B.7.4.2.2. Floating-Zone Technique. 

Floating, coating film defect, 7 122-123 Floating-roof tanks, 24 289-292 Floating solids, entrainment of, 16 694-696 Floating zone technique, fabrication... 

Melting properties, of fats, 10 827 Melting (floating zone) technique, fabrication method for inorganic materials, 7 415t... 

Single crystals of e.g. UPds have been prepared by floating zone technique Large and perfect single crystals of e.g. UC02 or UNi5 with high purity have been drawn from a levitated melt (Fig, 10). 

Another method for growing crystals from melt is the floating zone technique in which a section of the starting material, held vertically in the form of a rod, is melted by... 

The most frequently used techniques for the commercial manufacture of synthetic gemstone materials are summarized in Table 4. More details on these can be found in various texts (2,5—7). An overview including the various manufacturers is also available (3). Only rardy used for synthetics are such alternative growth techniques as the Bridgman technique of solidification in a cmcible and the float zone technique, both involving growth from the melt... 

The preparation of single crystals. The need for fundamental studies of the mechanical, electrical, and surface properties of carbides and nitrides have necessitated the preparation of single crystals.27 Carbide single crystals are prepared by the Vernouil technique, the floating zone technique, and methods involving precipitation from liquid metals. Nitride single crystals are prepared by vapor transport processes. 

Overview of Unit Operations. To maximize the electron or hole (carrier) mobility and thus device speed, ICs are built in single-crystal substrates. Methods of bulk crystal growth are therefore needed. The most common of these methods are the Czochralski and float-zone techniques. The Czochralski technique is a crystal-pulling or melt-growth method, whereas the float-zone technique involves localized melting of a sintered bar of the material, followed by cooling and, thus, crystallization. 

Laser-heated float zone technique (reproduced by permission of Chapman Hall)56. 

Amin R, Maier J, Balaya P, Chen DP, Lin CT. Ionic and electronic transport in single crystalline LiFePC>4 grown by optical floating zone technique. Solid State Ionics. 2008 179(27-32) 1683-7. 

Figure 6.12 Schematic of the laser-heated float zone technique of making ceramic fibers.

Herrmann, F.M. Mueller, G. Growth of GaAs crystals by the floating-zone technique under microgravity. J. Cryst. Growth. 1995, 156, 350-360. 

Volume defects include voids and local regions of different phases, such as a precipitate or an amorphous phase. In Si, oxygen precipitation is the most important volume defect. Silicon crystals are grown by either the Czochraski technique or by the float-zone technique. The typical concentration of oxygen in Czochraski Si crystals is about 10-20 ppm (parts per million) or 5 x 1017-1 x 1018 cm-3. The float-zone technique introduces less oxygen in Si than does the Czochraski technique. Most of the oxygen in the as-grown crystal is atomically... 

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