Conductivity silicon carbides

Ceramic matrix composites are under active consideration for low-observable military applications, where dielectric properties are a key performance factor. The frequency range of interest is the 8-12 GHz microwave range. The composite system must have low electrical conductivity. The SiOC-Nextel 312 system meets that requirement (as compared to ceramic composites made with conductive silicon carbide fibers). 

Silicon Carbide. Sihcon carbide is made by the electrofusion of siUca sand and carbon. SiUcon carbide is hard, abrasion resistant, and has a high thermal conductivity. It is relatively stable but has a tendency to oxidize above 1400°C. The siUca thus formed affords some protection against further oxidation (see Carbides). 

Silicon carbide has very high thermal conductivity and can withstand thermal shock cycling without damage. It also is an electrical conductor and is used for electrical heating elements. Other carbides have relatively poor oxidation resistance. Under neutral or reducing conditions, several carbides have potential usehilness as technical ceramics in aerospace appHcation, eg, the carbides (qv) of B, Nb, Hf, Ta, Zr, Ti, V, Mo, and Cr. Ba, Be, Ca, and Sr carbides are hydrolyzed by water vapor. 

Bricks of silicon carbide, either recrystaUized or clay-bonded, have a high thermal conductivity and find use in muffle walls and as a slag-resisting material. 

There are, of course, many more ceramics available than those listed here alumina is available in many densities, silicon carbide in many qualities. As before, the structure-insensitive properties (density, modulus and melting point) depend little on quality -they do not vary by more than 10%. But the structure-sensitive properties (fracture toughness, modulus of rupture and some thermal properties including expansion) are much more variable. For these, it is essential to consult manufacturers data sheets or conduct your own tests. 

After many attempts with several anode materials we found a stable anode. Silicon carbide and iron silicide, etc. in a conducting form are stable towards chlorine. The chlorine formed on the anode then reacts with the solvent (THF) forming chlorinated organic compounds. 

G. A. Slack. Thermal Conductivity of Prue + Impru e Silicon, Silicon Carbide + Diamond , Journal of Applied Physics 35 (1964), 3460-3466. 

Polysilanes can be regarded as one-dimensional analogues to elemental silicon, on which nearly all of modern electronics is based. They have enormous potential for technological uses [1-3]. Nonlinear optical and semiconductive properties, such as high hole mobility, photoconductivity, and electrical conductivity, have been investigated in some detail. However, their most important commercial use, at present, is as precursors to silicon carbide ceramics, an application which takes no advantage of their electronic properties. 

Phosphoric acid fuel cell (PAFC) working at 180-200 °C vfith a porous matrix of PTFE-bonded silicon carbide impregnated with phosphoric acid as electrolyte, conducting by the H cation. This medium-temperature fuel cell is now commercialized by ONSI (USA), mainly for stationary applications. 

Baliga, B. J., Silicon Carbide Semiconductor Devices Having Buried Silicon Carbide Conduction Barrier Layers Therein, United States Patent 5543637, August 6, 1996. 

An important application of polydimethylsilane is as a source of silicon carbide (SiC) fibres, which are manufactured under the trade-name Nicalon by Nippon Carbon in Japan. Heating in an autoclave under pressure converts polydimethylsilane to spinnable polycarbosilane (-Me2Si-CH2-) with elimination of methane. The spun fibres are then subjected to temperatures of 1200-1400 °C to produce silicon carbide fibres with very high tensile strengths and elastic moduli." As a result of their conductivity, polysilanes have also been used as hole transport layers in electroluminescent devices. In addition, the photoconductivity of polymethylphenylsilane doped with Cgo has been found to be particularly impressive. ... 

Because of high thermal conductivity and low thermal expansion, silicon carbide is very resistant to thermal shock as compared to other refractory materials. 

Resistivity measurements of doped, alpha-silicon carbide single crystals from —195 to 725°C showed a negative coefficient of resistivity below room temperature, which gradually changed to positive above room temperature (45). The temperature at which the changeover occurred increased as the ionization of the donor impurity increased. This is believed to be caused by a change in conduction mechanism. 

Semiconducting Properties. Silicon carbide is a semiconductor it has a conductivity between that of metals and insulators or dielectrics (4,13,46,47). Because of the thermal stability of its electronic structure, silicon carbide has been studied for uses at high (>500° C) temperature. The Hall mobility in silicon carbide is a function of polytype (48,49), temperature (41,42,45—50), impurity, and concentration (49). In n-type crystals, activation energy for ionization of nitrogen impurity varies with polytype (50,51). 

High Temperature. The low coefficient of thermal expansion and high thermal conductivity of silicon carbide bestow it with excellent thermal shock resistance. Combined with its outstanding corrosion resistance, it is used in heat-transfer components such as recuperator tubes, and furnace components such as thermocouple protection tubes, cmcibles, and burner components. Silicon carbide is being used for prototype automotive gas turbine engine components such as transition ducts, combustor baffles, and pilot combustor support (145). It is also being used in the fabrication of rotors, vanes, vortex, and combustor. 

Refractories. Its low coefficient of expansion, high thermal conductivity, and general chemical and physical stability make silicon carbide a valuable material for refractory use. Suitable applications for silicon carbide refractory shapes include boiler furnace walls, checker bricks, mufflers, kiln furniture, furnace skid rails, trays for zinc purification plants, etc (see REFRACTORIES). 

Other solid-state applications of silicon carbide include its use as an electroluminescent diode for use in sound recording equipment and photomultipliers and controllers. It has been studied as a reflective surface for lasers. By combining its excellent thermal conductivity and high electrical resistance, silicon carbide has also found application as an insulating material for integrated circuit substrates. 

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