Silicon Carbide Semiconductor

Tip-based oxidation experiments were first performed on Si(lll) and polycrystaline tantalum faces. - Since then a large number of materials have been locally oxidized, such as compound 111-V semiconductors silicon carbide several metals such as titanium, tantalum, aluminum, molybdenum, nickel, and niobium perovskite manganite thin films dielectrics such as silicon nitride... 

J. R. O Connor and J. Smiltens, eds., Silicon Carbide, A High Temperature Semiconductor, Pergamon Press, Inc., New York, 1960. 

Experimental applications include the direct deposition of patterns as small as 0.5 im in semiconductor applications using holographic methods, and the production of rods and coreless boron and silicon carbide fibers (see Ch. 19). 

Davis, R., Silicon Carbide and Diamond Semiconductor Thin Films, M/w. Ceram. Soc. Bull, 72(7) 99-106(July 1993)... 

Semiconductor Silicon Germaniun III-V II-VI compounds Diamond Silicon carbide Partially able to move 10-2 to 109... 

CVD is a maj or process in the production of thin films of all three categories of electronic materials semiconductors, conductors, and insulators. In this chapter, the role of CVD in the fabrication of semiconductors is reviewed. The CVD production of insulators, conductors, and diffusion barriers is reviewed in the following chapter. The major semiconductor materials in production or development are silicon, germanium, ni-V and II-VI compounds, silicon carbide, and diamond. 

Tbe advantages of silicon carbide as a semiconductor material can be summarized as follows ... 

Diamond, however, is not the universal semiconductor panacea it is an indirect bandgap semiconductor and does not lase. In addition, present semiconductor materials, such as silicon and gallium arsenide, are solidly entrenched with a well-established technology, and competing with them will not be an easy task. CVD diamond will also compete with silicon carbide, which has also an excellent potential as a high-performance semiconductor material and is considerably easier and cheaper to produce. 

Progress in semiconductor processing has evolved in a number of substrate materials, pre-destined for the use in micro structured devices, such as Silicon, Silicon-on-Insulator (SOI), Silicon Carbide and Gallium Arsenide [1]. 

LEDs and semiconductor, 22 174-175 in organic semiconductors, 22 201, 202 silicon, 22 485, 488 silicon carbide, 22 530 Band gap transition type, for binary compound semiconductors, 22 145, 146-147t Band structure... 

Flexural modulus, 10 177, 223, 224 of filled polymers, 11 303 Flexure strength, of silicon carbide, 22 528t FLExX, 6 13 FlexX method, 10 337 Flicker noise, silicon-based semiconductors and, 22 237 Flint, 5 640 22 480... 

Power recovery, 20 139-143 Power recovery expander, 22 731 Power recovery systems process flow in, 22 730-731 types of, 22 729-730 PowerSearch software, 28 244, 250 Power semiconductors silicon-based, 22 260-261 silicon carbide in, 22 539-540 Power station design, 20 757 Power supplies... 

Casady, J. B., et al., Silicon Carbide Power MOSFET Technology, IEEE Inti. Symposium on Compound Semiconductors, September 8-11, 1997, pp. 359-362. 

Baliga, B. J., Silicon Carbide Semiconductor Devices Having Buried Silicon Carbide Conduction Barrier Layers Therein, United States Patent 5543637, August 6, 1996. 

Advances in silicon carbide processing and applications.—(Artech House semiconductor materials and devices library). 

Semiconducting Properties. Silicon carbide is a semiconductor it has a conductivity between that of metals and insulators or dielectrics (4,13,46,47). Because of the thermal stability of its electronic structure, silicon carbide has been studied for uses at high (>500° C) temperature. The Hall mobility in silicon carbide is a function of polytype (48,49), temperature (41,42,45—50), impurity, and concentration (49). In n-type crystals, activation energy for ionization of nitrogen impurity varies with polytype (50,51). 

Considerable interest in the solid-state physics of silicon carbide, that is, the relation between its semiconductor characteristics and crystal growth, has resulted from the expectation that SiC would be useful as a high temperature-resistant semiconductor in devices such as point-contact diodes (148), rectifiers (149), and transistors (150,151) for use at temperatures above those where silicon or germanium metals fail (see Semiconductors). 

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