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Compounds defects

The color development of photochromic compounds can also be utili2ed as a diagnostic tool. The temperature dependence of the fa ding of 6-nitroindolinospiropyran served as the basis for a nondestmctive inspection technique for honeycomb aerospace stmctures (43). One surface of the stmcture to be exarnined was covered with a paint containing the photochromic compound and activated to a violet color with ultraviolet light. The other side of the stmcture was then heated. The transfer of heat through the honeycomb stmcture caused bleaching of the temperature-dependent photochromic compound. Defects in the honeycomb where heat transfer was inhibited could be detected as darker areas. [Pg.165]

To go further towards understanding the concepts of inorganic chemistry we need to consider the subject of defects in solids. They are a key to the behaviour of many materials. They are of central importance to diffusion, phase transformations and reactivity of solid compounds. Defect structures show up as the local occurrence of a grain boundary or sites of a structure building operation. The formation of a structure using translational defects is easily understood by a planar example, illustrated in Figs. 2.3. [Pg.46]

Compound Defect Calculated energy (eV) Experimental energy (eV)... [Pg.199]

An atom or a molecule with the total spin of the electrons S = 1 is said to be in a triplet state. The multiplicity of such a state is (2.S +1)=3. Triplet systems occur in both excited and ground state molecules, in some compounds containing transition metal ions, in radical pair systems, and in some defects in solids. [Pg.1554]

Adechanical stahility. ChemisoriDtion to tire surface, intennolecular interactions and crosslinking between adjacent compounds—if possible—all contribute to tire resulting stability of tire monolayer film. Lateral force microscopy investigations revealed tliat tire mechanical stability towards lateral forces on tire nanometre scale is likely to be detennined by tire defect density and tire domain size on a nano- to micrometre scale [163, 1731. [Pg.2627]

Quaternary Ga In j.As jPj, grown on InP is of major importance to fibre-optic communications. In quaternary compounds, both the gap and the lattice constant can be tailored by changing the chemical composition. In thick layers, in order to avoid the generation of strain-induced defects, care must be taken in adjusting the ratio of x and v to maintain the lattice-matched composition x = 2.2v. The available gaps range from 1.34 eV in InP to -0.75 eV in... [Pg.2880]

Intrinsic defects (or native or simply defects ) are imperfections in tire crystal itself, such as a vacancy (a missing host atom), a self-interstitial (an extra host atom in an otherwise perfect crystalline environment), an anti-site defect (in an AB compound, tliis means an atom of type A at a B site or vice versa) or any combination of such defects. Extrinsic defects (or impurities) are atoms different from host atoms, trapped in tire crystal. Some impurities are intentionally introduced because tliey provide charge carriers, reduce tlieir lifetime, prevent tire propagation of dislocations or are otlierwise needed or useful, but most impurities and defects are not desired and must be eliminated or at least controlled. [Pg.2884]

The methods listed thus far can be used for the reliable prediction of NMR chemical shifts for small organic compounds in the gas phase, which are often reasonably close to the liquid-phase results. Heavy elements, such as transition metals and lanthanides, present a much more dilficult problem. Mass defect and spin-coupling terms have been found to be significant for the description of the NMR shielding tensors for these elements. Since NMR is a nuclear effect, core potentials should not be used. [Pg.253]

As described in the chapter on band structures, these calculations reproduce the electronic structure of inhnite solids. This is important for a number of types of studies, such as modeling compounds for use in solar cells, in which it is important to know whether the band gap is a direct or indirect gap. Band structure calculations are ideal for modeling an inhnite regular crystal, but not for modeling surface chemistry or defect sites. [Pg.319]

An additional problem is encountered when the isolated solid is non-stoichiometric. For example, precipitating Mn + as Mn(OH)2, followed by heating to produce the oxide, frequently produces a solid with a stoichiometry of MnO ) where x varies between 1 and 2. In this case the nonstoichiometric product results from the formation of a mixture of several oxides that differ in the oxidation state of manganese. Other nonstoichiometric compounds form as a result of lattice defects in the crystal structure. ... [Pg.246]

Green coloration, present in many vegetable oils, poses a particular problem in oil extracted from immature or damaged soybeans. Chlorophyll is the compound responsible for this defect. StmcturaHy, chlorophyll is composed of a porphyrin ring system, in which magnesium is the central metal atom, and a phytol side chain which imparts a hydrophobic character to the stmcture. Conventional bleaching clays are not as effective for removal of chlorophylls as for red pigments, and specialized acid-activated adsorbents or carbon are required. [Pg.124]

Solution polymerization of VDE in fluorinated and fluorochlorinated hydrocarbons such as CEC-113 and initiated with organic peroxides (99), especially bis(perfluoropropionyl) peroxide (100), has been claimed. Radiation-induced polymerization of VDE has also been investigated (101,102). Alkylboron compounds activated by oxygen initiate VDE polymerization in water or organic solvents (103,104). Microwave-stimulated, low pressure plasma polymerization of VDE gives polymer film that is <10 pm thick (105). Highly regular PVDE polymer with minimized defect stmcture was synthesized and claimed (106). Perdeuterated PVDE has also been prepared and described (107). [Pg.386]

For each specific appHcation of a mbber compound as an iasulating material, there is a minimum value of resistivity below which it does not function satisfactorily. In addition, iasulating compounds are required to withstand the effect of water, moist atmosphere, or heat without their resistivity values falling below a satisfactory level. Insulation resistance measurements frequently serve as useful control tests to detect impurities and manufactuting defects ia mbber products. [Pg.325]

The quality of bonding is related direcdy to the size and distribution of solidified melt pockets along the interface, especially for dissimilar metal systems that form intermetaUic compounds. The pockets of solidified melt are brittle and contain localized defects which do not affect the composite properties. Explosion-bonding parameters for dissimilar metal systems normally are chosen to minimize the pockets of melt associated with the interface. [Pg.147]

Refractory Compounds. Refractory compounds resemble oxides, carbides, nitrides, borides, and sulfides in that they have a very high melting point. In some cases, they form extensive defect stmctures, ie, they exist over a wide stoichiometric range. For example, in TiC, the C Ti ratio can vary from 0.5 to I.O, which demonstrates a wide range of vacant carbon lattice sites. [Pg.43]

Once initiated, zirconium and carbon powders react exothermically in a vacuum or inert atmosphere to form zirconium carbide. With the greater availabiHty of relatively pure metal powders, this technique is coming into common use for the production of several refractory carbides. Zirconium carbide is not a fixed stoichiometric compound, but a defect compound with a single-phase composition ranging from ZrCQ to ZrCQ at 2400°C. [Pg.433]

In pure and stoichiometric compounds, intrinsic defects are formed for energetic reasons. Intrinsic ionic conduction, or creation of thermal vacancies by Frenkel, ie, vacancy plus interstitial lattice defects, or by Schottky, cation and anion vacancies, mechanisms can be expressed in terms of an equilibrium constant and, therefore, as a free energy for the formation of defects, If the ion is to jump into a normally occupied lattice site, a term for... [Pg.352]

In addition, all of the process raw materials must be clean and not iatroduce contaminants. The raw materials and temporary coatings must also be defect-free, and these have to be manufactured under similar conditions so that no contaminants are iatroduced. The solvents used to clean the substrate and develop the resists must be filtered and pure. Care must also be taken to ensure that no trace compounds or elements are present that may affect the electronic properties. The specific type of coating aid, the type of functional coating, and the process used to apply the functional coating are all widely varied ia actual practice. [Pg.124]


See other pages where Compounds defects is mentioned: [Pg.110]    [Pg.7]    [Pg.199]    [Pg.110]    [Pg.7]    [Pg.199]    [Pg.372]    [Pg.848]    [Pg.849]    [Pg.2937]    [Pg.2937]    [Pg.344]    [Pg.130]    [Pg.327]    [Pg.131]    [Pg.132]    [Pg.449]    [Pg.117]    [Pg.13]    [Pg.164]    [Pg.482]    [Pg.365]    [Pg.382]    [Pg.14]    [Pg.173]    [Pg.346]    [Pg.354]    [Pg.346]    [Pg.38]    [Pg.458]    [Pg.468]    [Pg.557]    [Pg.117]   


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Compounds Responsible for Wine Defects

Compounds, point defects

Defect Concentration in Ionic Compounds

Defects in GaN and Related Compounds

Defects refractory metal compounds

Drug compounds mass defect

Electrolytes ionic compounds defect concentration

Equilibrium Defect Concentrations in Pure Compounds

Hydrogen—Shallow-Level-Defect Complexes in Compound Semiconductors

Ionic compounds lattice defects

Metal oxide-based compounds surface defects

NON-STOICHIOMETRIC COMPOUNDS DERIVED FROM EXTENDED DEFECTS

Native Defects in GaN and Related Compounds

Native Point Defects in GaN and Related Compounds

Nonstoichiometric compounds defect structure

Point Defects in Intermetallic Compounds

Point Defects in Stoichiometric Compounds

Point defects of compounds

Transition metal compounds defects

Transition-metal compounds point defects

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