Defects in GaN and Related Compounds

A8.2 Native point defects in GaN and related compounds A8.3 O, C and other unintentional impurities in GaN and related compounds... 

Van de WaBe, C.G., Neugebauer, J., and Stampfl, C. (1999) Impurities and native defects in GaN and related compounds, in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, eds J.H. Edgar, S. Strite, I. Akasaki, et al. INSPEC. Boguslawski, P. and Bemholc, J. 

A8.1 Native defects, impurities and doping in GaN and related compounds general remarks... 

Although first deposition experiments of nonpolar GaN films on r-plane sapphire were performed as early as in 1987 [5], the defect structure in wurtzite GaN and related compounds has been mainly studied in the past focusing on films oriented along the hexagonal [0001] axis (c-axis). Growth techniques such as molecular beam epitaxy (MBE) [1], metal organic vapor phase epitaxy (MOVPE) [6], and hydride vapor phase epitaxy (HVPE) [7,8] are established for polar as well as nonpolar GaN growth. The structural quality of a-plane GaN... 

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