Native Defects in GaN and Related Compounds

1 Native defects, impurities and doping in GaN and related compounds general remarks 

2 Native point defects in GaN and related compounds A8.3 O, C and other unintentional impurities in GaN and related compounds 

4 Shallow donors in GaN and related compounds A8.5 Acceptors in GaN and related compounds A8.6 Theory of codoping of acceptors and reactive donors in GaN 

7 Yellow luminescence in GaN A8.8 Hydrogen and acceptor compensation in GaN A8.9 3d transition metals in GaN and related compounds A8.10 Er-doped GaN and AIN 

Controlled introduction of impurities forms the basis of much of semiconductor technology indeed p-type (acceptor-doped) and n-type (donor-doped) layers and the junctions between them control carrier confinement, carrier flow and ultimately the device characteristics. Achieving both n-type and p-type conductivity has traditionally proved to be a challenge in wide-bandgap semiconductors. 

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Van de WaBe, C.G., Neugebauer, J., and Stampfl, C. (1999) Impurities and native defects in GaN and related compounds, in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, eds J.H. Edgar, S. Strite, I. Akasaki, et al. INSPEC. Boguslawski, P. and Bemholc, J. 

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