Chemical vapour deposition metal films

The largest uses of platinum group metals in electronics are ruthenium for resistors and palladium for multilayer capacitors, both applied by thick film techniques . Most anodes for brine electrolysis are coated with mixed ruthenium and titanium oxide by thermal decomposition . Chemical vapour deposition of ruthenium was patented for use on cutting tools . 

Aylett, B. J., and Tannahill, A. A., Chemical Vapour Deposition of Metal Silicides from Organometallic Compounds with Silicon-Metal Bonds, SIRA Int. Seminar on Thin Film Preparation and Processing Technolgy, Brighton, UK (March 1985)... 

Baum, T. H. Larson, C. E. Ligand Stabilised +1 Metal /3-diketonate Coordination Complexes and their Use in Chemical Vapour Deposition of Metal Thin Films. U.S. Patent 5,096,737, March 17, 1992. 

The rapid development of solid state physics and technology during the last fifteen years has resulted in intensive studies of the application of plasma to thin film preparation and crystal growth The subjects included the use of the well known sputtering technique, chemical vapour deposition ( CVD ) of the solid in the plasma, as well as the direct oxidation and nitridation of solid surfaces by the plasma. The latter process, called plasma anodization 10, has found application in the preparation of thin oxide films of metals and semiconductors. One interesting use of this technique is the fabrication of complementary MOS devices11. Thin films of oxides, nitrides and organic polymers can also be prepared by plasma CVD. 

Thin films of thickness typically 10 nm are readily formed in a vacuum chamber by evaporation, sputtering , or chemical vapour deposition (CVD). Many metals and metal alloys, e.g. aluminium, silver, gold and Ni-Cr, can be... 

Recently, low-temperature routes have been sought for by decomposition of organometallic complexes with tellurium-containing ligands. The optoelectronic devices normally require the material to be used as thin films. They are fabricated with special methods, such as molecular beam epitaxy, metal-organic chemical vapour deposition, or atomic layer deposition. 

The bis-Cp titanium bis(/-butanethiolato) and bis(ethanethiolato) complexes have been used as a single-source precursors for the preparation of thin films of titanium sulfides by metal-organic chemical vapour deposition (MOCVD). The crystal and molecular structures of the precursor complexes have been determined for comparison with homologous complexes of the general formula Cp2Ti(SR)2.1618... 

Buiting Ml, Reader AH (1990) Influence of impurityes and micro structure on the resistivity of LPCVD titanium nitride films. In Besmann TM, Gallois BM (eds) Chemical vapour deposition of refractory metals and ceramics. Materials Research Society, Pittsburgh, PA, ppl 99-204... 

Ziko JL (1988) Metal-organic chemical vapour deposition technology and equipment. In Schuergraf KK Handbook of thin film deposition processes and techniques. Noyes, Park Ridge, NJ, pp234-269... 

We devote a significant part of this chapter to the method of chemical vapour deposition, the development of which has been closely tied to the need to deposit thin films of a range of metals and inorganic materials for use in semiconducting devices, ceramic coatings and electrochromic materials. Table 27.3 lists some applications of selected thin film materials. Part of the challenge of the successful production of thin films is to find suitable molecular precursors, and there is much research interest in this area. 

Chemical vapour deposition (CVD) is the delivery (by uniform mass transport) of a volatile precursor or precursors to a heated surface on which reaction takes place to deposit a thin film of the solid product the surface must be hot enough to permit reaction but cool enough to allow solid deposition. Multilayer deposition is also possible. Metal-organic chemical vapour deposition (MOCVD) refers specifically to use of metal-organic precursors. 

In the case of glass, however, no great variations in behaviour between different types are expected because of their very similar structure and surface composition. Chemical vapour deposition reactions had already been tried by the last century, for instance in the refinement and deposition of silicon by reduction of SiF4 and SiCU with alkali metals [71] and in the refining of Ni using Ni-carbonyl in the Mond process [72,73]. The major impact of chemical vapour deposition on thin-film technology took place, starting some 60 years ago, when refractory compounds such as metal carbides, nitrides, silicides, borides and oxides as well as mixed phases of... 

Columnar or dendritic microstructure is found also in most metal and many compound films formed by chemical vapour deposition in certain ranges of condition. As a result of the same mechanism of uninterrupted crystal growth towards the direction of material supply it is further found in films obtained by some deposition techniques from solution, particularly in electroplated films. 

Chemical vapour deposition (CVD), or more specifically, organo-metallic CVD can also be used to prepare ferrite thin films (Itoh, Takeda Naka, 1986). A mixture of acetylacetonate complexes of the desired metal is evaporated in a quartz boat (number 1 in Fig. 3.27) and is reacted with O2, which is introduced directly in the deposition zone. By adding a second furnace (B), an additional component evaporating at a different temperature can be transported to the substrate. Glass or MgO single crystals can be used as the substrates an annealing up to 1(X)0°C is performed on the film to improve its crystallisation. Spinel thin films (Ni, Ni-Zn) have been prepared by this method. 

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