Chemical vapour deposited films

MS Weaver and DDC Bradley, Organic electroluminescence devices fabricated with chemical vapour deposited films, Synth. Met., 83 61-66, 1996. 

Chemical vapour deposition Example. The preparation of films of titanium dioxide. 

Molybdenum is used for high energy laser mirrors which require water cooling. Corrosive action of the circulating cooling water can be prevented by coating the waterways with a thin film of tungsten by chemical vapour deposition. US Pat Application 308976 (1982). 

The largest uses of platinum group metals in electronics are ruthenium for resistors and palladium for multilayer capacitors, both applied by thick film techniques . Most anodes for brine electrolysis are coated with mixed ruthenium and titanium oxide by thermal decomposition . Chemical vapour deposition of ruthenium was patented for use on cutting tools . 

Aylett, B. J., and Tannahill, A. A., Chemical Vapour Deposition of Metal Silicides from Organometallic Compounds with Silicon-Metal Bonds, SIRA Int. Seminar on Thin Film Preparation and Processing Technolgy, Brighton, UK (March 1985)... 

Oguri, K. and Ariai, T., Friction Coefficient of Si-C, Ti-C and Ge-C Coatings with Excess Carbon Formed by Plasma-assisted Chemical Vapour Deposition, Thin Solid Films, Vol. 208,1992, pp. 158-160. 

An example of this process of data analysis is provided by the work of Yubero et al. (2000), who studied the structure of iron oxide thin films prepared at room temperature by ion beam induced chemical vapour deposition. Such films find important applications because of their optical, magnetic, or magneto-optical properties. They were produced by bombardment of a substrate with Oj or Oj + Ar+ mixtures, and Figure 4.15 shows RBS spectra of two iron oxide thin films prepared on a Si substrate by each of these bombardment methods. 

Baum, T. H. Larson, C. E. Ligand Stabilised +1 Metal /3-diketonate Coordination Complexes and their Use in Chemical Vapour Deposition of Metal Thin Films. U.S. Patent 5,096,737, March 17, 1992. 

The industrial application of Plasma Induced Chemical Vapour Deposition (PICVD) of amorphous and microcrystalline silicon films has led to extensive studies of gas phase and surface processes connected with the deposition process. We are investigating the time response of the concentration of species involved in the deposition process, namely SiH4, Si2H6, and H2 by relaxation mass spectroscopy and SiH2 by laser induced fluorescence. 

Applications involving ring transfer or loss. The kinetic lability, volatility, and Lewis acidity of heavy alkaline earth metallocenes have been the properties most important to their applications. The gas-phase decomposition of volatile metallocenes is useful in the preparation of thin films of alkaline earth-containing materials and in doping semiconductors. Reviews are available on the use of group 2 organometallic compounds as precursors for chemical-vapour deposition (CVD).2 3... 

As noted above, amorphous carbon films can be produced from carbon-containing gas phases (physical vapour deposition, PVD). They can also be produced from hydrocarbon-containing gases (chemical vapour deposition, CVD), Both PVD and CVD processes can be thermally-activated or can be plasma- and/or electric field-assisted processes (e.g., microwave assisted CVD and ion beam deposition). As a consequence a wide range of processes have been developed to form amorphous carbon films and a correspondingly complex nomenclature has evolved [70, 71],... 

At temperatures around 600°C and extremely low pressures, methane will decompose and deposit a thin film of carbon, in the form of diamond, on a surface. The process, known as chemical vapour deposition, or CVD, can be used to coat a wide variety of surfaces. The hardness of this diamond film can be used for applications that require non-scratch surfaces such as cookware, eyeglasses, and razor blades. 

Chemical Vapour Deposition (PECVD). It is expected that these amorphous silicon foils could be processed at low costs using the processing methods adopted for films. 

Thin films of hematite are grown on silicon wafers by ion beam induced, chemical vapour deposition (IBICVD). FeCOs vapour is passed over the silicon substrate which is bombarded by OJ ions which decompose the iron compound (Yubero et al., 2000). 

Gonzalez-Elipe, A.R. (2000 a) Iron oxide thin films prepared by ion beam induced chemical vapour depositions. Structural characterization by infrared spectroscopy. J. Vac. 

Many thin-film processing techniques have been developed and further improved in the search for the most suitable approach for a specific application. Typically thin films can be prepared from either the hquid or gaseous phase. Vapour-phase deposition processes, which are more popular, fall into the two main categories of physical and chemical vapour deposition. Atomic layer deposition holds a special position among the chemical vapour deposition techniques because it offers the possibility to produce thin films in a controlled, self-hmiting manner. 

Abstract A growing tendency in chemical vapour deposition is to produce ultra-thin films or nano-objects as particles, tubes or wires. Such an objective addresses the question of a better control of the main parameters which govern the nucieation and growth steps of the deposit. This chapter focuses on the interfacial phenomena that occur at both the solid surface and the gaseous phase levels. The role of surface defects, surface reactive groups, and autocatalytic phenomena on the nucieation step are discussed by means of representative examples from the literature. In an attempt to clarify gas-phase properties, the influence of the supersaturation parameter on the nucieation step is also described. 

Chemical vapour deposition (CVD) is employed to prepare adherent films of controlled composition and thickness. Protective coatings, micro- and opto-electronics, ceramic fibres and ceramic-matrix composites production represent the usual applications of this technique, which allows surfaces of complex geometry to be uniformly coated. 

FIGURE 3.10 (a) Chemical-vapour deposition reactor (b) cross section of a 100 pm-thick CVD diamond film grown by DC arc jet. The columnar nature of the growth is evident, as is the increase in film quality and grain size with growth time. (Courtesy of Dr. Paul May and Prof. Mike Ashfold, Bristol University.)... 

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