Atomic vapor deposition

Fig. 5 Diagram showing the major aspects of metal atom vapor deposition on a SAM...

The synthesis of large clusters such as [A Ris]3- (Chapters 2 and 3) proceeds by A1 atom cluster-core build up. Cluster-core growth is terminated at some point by external ligands. The method of Schnockel is a variation of metal-atom vapor-deposition techniques and relies on (a) the reversibility of the equilibrium between the liquid metal, e.g., Al, and gaseous metal halide, e.g., AICI3, with gaseous subhalide, e.g., A1C1 (b) the shift in equilibrium position with temperature and (c) competitive rates at similar temperatures of subhalide disproportionation to metal... 

Metallization layers are generally deposited either by CVD or by physical vapor deposition methods such as evaporation (qv) or sputtering. In recent years sputter deposition has become the predominant technique for aluminum metallization. Energetic ions are used to bombard a target such as soHd aluminum to release atoms that subsequentiy condense on the desired substrate surface. The quaUty of the deposited layers depends on the cleanliness and efficiency of the vacuum systems used in the process. The mass deposited per unit area can be calculated using the cosine law of deposition ... 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

Oxidation. AH inorganic siUcon hydrides are readily oxidized. Silane and disilane are pyrophoric in air and form siUcon dioxide and water as combustion products thus, the soot from these materials is white. The activation energies of the reaction of silane with molecular and atomic oxygen have been reported (20,21). The oxidation reaction of dichlorosilane under low pressure has been used for the vapor deposition of siUcon dioxide (22). 

Many attempts have been made to synthesi2e cubic BN at low pressures by some sort of chemical vapor deposition process in analogy with the low pressure deposition of diamond from methane in the presence of H atoms (see Diamond, synthetic). However, the amounts of cubic BN produced in this fashion in 1991 were miniscule, and were at best thin layers only a few do2en atoms thick (12). 

Physics and chemistry researchers approach III—V synthesis and epitaxial growth, ie, growth in perfect registry with the atoms of an underlying crystal, differently. The physics approach, known as molecular beam epitaxy (MBE), is essentially the evaporation (14—16) of the elements, as illustrated in Figure 4. The chemistry approach, organometaUic chemical vapor deposition (OMCVD) (17) is exemplified by the typical chemical reaction ... 

C. C. Battaille, D. J. Srolvitz, J. E. Butler. A kinetic Monte Carlo method for the atomic-scale simulation of chemical vapor deposition application to diamond. J App Phys 52 6293, 1997. 

Dirubidium phthalocyanine (PcRb2) and dicesium phthalocyanine (PcCs2) can be prepared by chemical-vapor deposition of benzene-1,2,4,5-tctracarbonitrile and the metal chloride.135 In the solid phase, additional rubidium atoms are complexed between peripheral cyano groups. 

Chemical vapor deposition may be defined as the deposition of a solid on a heated surface from a chemical reaction in the vapor phase. It belongs to the class of vapor-transfer processes which is atomistic in nature, that is the deposition species are atoms or molecules or a combination ofthese. Beside CVD, they include various physical-vapor-deposition processes (PVD) such as evaporation, sputtering, molecular-beam epitaxy, and ion plating. 

Like CVD, PVD is a vapor deposition process where the deposition species are atoms, molecules, or a combination of the two. The distinction between these two processes is that, in CVD, deposition occurs by chemical reaction, whereas in PVD, deposition is by condensation. CVD is usually endothermic and PVD is exothermic. 

Several patents dealing with the use of volatile metal amidinate complexes in MOCVD or ALD processes have appeared in the literature.The use of volatile amidinato complexes of Al, Ga, and In in the chemical vapor deposition of the respective nitrides has been reported. For example, [PhC(NPh)2]2GaMe was prepared in 68% yield from GaMes and N,N -diphenylbenzamidine in toluene. Various samples of this and related complexes could be heated to 600 °C in N2 to give GaN. A series of homoleptic metal amidinates of the general type [MIRCfNROilnl (R = Me, Bu R = Pr, BuO has been prepared for the transition metals Ti, V, Mn, Fe, Co, Ni, Cu, Ag, and La. The types of products are summarized in Scheme 226. The new compounds were found to have properties well-suited for use as precursors for atomic layer deposition (ALD) of thin films. 

At the end of last century, a near frictionless carbon (NFC) coating was reported, which is practically hydrogen contained DLC film grown on steel and sapphire substrates using a plasma enhanced chemical vapor deposition (PECVD) system [50]. By using a ball on a disk tribo-meter, a super low friction coefficient of 0.001-0.003 between the films coated on both the ball and the disk was achieved [50]. A mechanistic model was proposed that carbon atoms on the surface are partially di-hydrogenated, resulting in the chemical inertness of the surface. Consequently, adhesive interaction becomes weak and super low friction is achieved [22],... 

The most intensive development of the nanoparticle area concerns the synthesis of metal particles for applications in physics or in micro/nano-electronics generally. Besides the use of physical techniques such as atom evaporation, synthetic techniques based on salt reduction or compound precipitation (oxides, sulfides, selenides, etc.) have been developed, and associated, in general, to a kinetic control of the reaction using high temperatures, slow addition of reactants, or use of micelles as nanoreactors [15-20]. Organometallic compounds have also previously been used as material precursors in high temperature decomposition processes, for example in chemical vapor deposition [21]. Metal carbonyls have been widely used as precursors of metals either in the gas phase (OMCVD for the deposition of films or nanoparticles) or in solution for the synthesis after thermal treatment [22], UV irradiation or sonolysis [23,24] of fine powders or metal nanoparticles. 

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