Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Atom deposition

Experimentally one can fabricate advanced materials by depositing a material on a host lattice. In particular, ceria thin films, supported on a variety of substrates, have been synthesised using, for example, molecular beam epitaxy and chemical vapour deposition. Here, the [Pg.266]

The effect of supporting a thin film on a substrate can also lead to a variety of (potentially catalytically reactive) surfaces being exposed by the thin film. In particular. Fig. 5.8(c) shows a heavily corrugated CaO surface, which at a particular critical thickness transforms via dislocation evolution to CaO(lOO), Fig. 5.8(d). Accordingly, this paves the way for computer aided materials design in that various substrates and thin-film thicknesses can be explored computationally to determine systems with desirable (reactive) surfaces such predictions can then be tested experimentally. [Pg.267]

A third approach is to simulate crystallisation. In particular, all (crystalline) material synthesis involves some kind of crystallisation process. This may be crystallisation in solution or crystallisation [Pg.267]


We have so far assumed that the atoms deposited from the vapor phase or from dilute solution strike randomly and balHstically on the crystal surface. However, the material to be crystallized would normally be transported through another medium. Even if this is achieved by hydrodynamic convection, it must nevertheless overcome the last displacement for incorporation by a random diffusion process. Therefore, diffusion of material (as well as of heat) is the most important transport mechanism during crystal growth. An exception, to some extent, is molecular beam epitaxy (MBE) (see [3,12-14] and [15-19]) where the atoms may arrive non-thermalized at supersonic speeds on the crystal surface. But again, after their deposition, surface diffusion then comes into play. [Pg.880]

This length is apparently related to the capture time by the relation Pi J Tc and il A physical meaning of the free diffusion length 4 is that the maximum size of a stable adsorbed two-dimensional nucleus on a facet cannot essentially exceed this free diffusion length. If the nucleus is smaller, all atoms depositing on the surface can still find the path to the boundary of a nucleus in order to be incorporated there. If the nucleus is larger, a new nucleus can develop on its surface. [Pg.885]

Vanadium atom depositions were further studied in alkane matrices 109) in an effort to observe the influence of other low-temperature, matrix environments on the optical spectra and clustering properties of metal atoms. Thus, vanadium atoms were deposited with a series of normal, branched, and cyclic alkanes over a wide range of temperature. The atomic spectra were somewhat broadened compared to those in argon, but the matrix-induced, frequency shifts from gas-phase values were smaller. As shown in Fig. 3, these shifts decrease with in-... [Pg.84]

The relative extinction-coefficients for Agi,2,s determined by pho-toaggregation procedures were found not to be strongly matrix-dependent (see Table VIII). Moreover, the results for Agj were in good agreement with those obtained by quantitative, metal-atom deposition-techniques. [Pg.107]

Read the entire laboratory activity. Using the above equations to guide you, form a hypothesis about how many copper atoms you expect to lose from the copper anode for each copper atom deposited on the cathode. How many electrons do you expect to pass through the circuit for each copper atom deposited at the cathode Record your hypothesis on page 166. [Pg.165]

Observing and Inferring Explain the relationship between the number of electrons passing from the cathode and the number of copper atoms deposited on the key. [Pg.168]

Recently, Melosh has obtained electrically stable LAJs as large as 9 mm2 by atomic deposition of a nanometer-thick passivating layer of aluminium oxide on top of self-assembled organic monolayers with hydrophilic terminal groups [158,159]. Obviously, interlayers based junctions limit electrical measurements only to organic SAMs less conductive than the protecting layer. [Pg.98]

In order to investigate the dependence of a fast reaction on the nature of the metal, Iwasita et al. [3] measured the kinetics of the [Ru(NH,3)6]2+/3+ couple on six different metals. Since this reaction is very fast, with rate constants of the order of 1 cm s-1, a turbulent pipe flow method (see Chapter 14) was used to achieve rapid mass transport. The results are summarized in Table 8.1 within the experimental accuracy both the rate constants and the transfer coefficients are independent of the nature of the metal. This remains true if the electrode surfaces axe modified by metal atoms deposited at underpotential [4]. It should be noted that the metals investigated have quite different chemical characteristics Pt, and Pd are transition metals Au, Ag, Cu are sd metals Hg and the adsorbates T1 and Pb are sp metals. The rate constant on mercury involved a greater error than the others... [Pg.98]

In a different approach to this problem, Brenner and Garrison used molecular dynamics to examine the chemical mechanisms which lead to reordering of the atom-pairing reconstruction during atom deposition . This simulation incorporated a dissociative valence-force field potentiaF and consisted essentially of a high-temperature anneal of monolayers of silicon atoms which had been deposited on a silicon (001) reconstructed surface. [Pg.321]

Maitani MM, Daniel TA, Cabarcos OM, Allara DL (2009) Nascent metal atom condensation in self-assembled monolayer matrices coverage-driven morphology transitions from buried adlayers to electrically active metal atom nanofilaments to overlayer clusters during aluminum atom deposition on alkanethiolate/gold monolayers. J Am Chem Soc 131 (23) 8016-8029... [Pg.267]

Balzer E, Bammel K, Rubahn HG (1993) Laser investigation Na atoms deposited via inert spacer layers close metal surfaces. J Chem Phys 98 7625-7635... [Pg.269]

Beams of aluminium, gallium, arsenic, and indium were directed onto a heated InP crystal. The substrate needs to be heated to allow the atoms deposited from the beams to migrate to their correct lattice position. The relative pressures of the component beams were adjusted for each layer to give the desired compositions. [Pg.171]

Substrate metal Adsorbed metal Structure Nearest neighbor distance Heat of vaporization (kcal/g atom) Deposition technique 1 Substrate orientation... [Pg.60]

As in surface diffusion (Eq. 14.6), flux accumulation during grain-boundary diffusion leads to atom deposition adjacent to the grain boundary. The resulting accumulation causes the adjacent crystals to move apart at the rate2... [Pg.389]

Raman and UV-visible spectroscopy, but no precise characterization was made. A report was made in 1981 where the IR spectrum of Cu atoms deposited with C02 at 80 K was interpreted in terms of the formation of a -coordinated complex between C02 and zerovalent copper [32]. Almond et al. [33] prepared a (C02) M(CO)5 molecule (M = Cr, W), that led to the formation of CO and oxometal carbonyl under UV irradiation. The first complete study of the reactivity of C02 with the first row of transition metals was made by Mascetti et al. [34, 35]. Here, it was shown that the late transition metal atoms (Fe, Co, Ni, and Cu) formed one-to-one M(C02) complexes, where C02 was bonded in a side-on (Ni), end-on (Cu), or C-coordinated (Fe, Co) manner, while the earlier metal atoms (Ti, V, and Cr) spontaneously inserted into a CO bond to yield oxocarbonyl species OM(CO) or 0M(C0)(C02). Normal coordinate analysis showed that the force constants of CO bonds were significantly decreased by 50%, compared to free C02, and that the OCO angle was bent between 120 and 150°. [Pg.61]


See other pages where Atom deposition is mentioned: [Pg.256]    [Pg.41]    [Pg.51]    [Pg.210]    [Pg.136]    [Pg.137]    [Pg.265]    [Pg.433]    [Pg.262]    [Pg.36]    [Pg.129]    [Pg.157]    [Pg.252]    [Pg.167]    [Pg.165]    [Pg.75]    [Pg.397]    [Pg.5]    [Pg.5]    [Pg.6]    [Pg.97]    [Pg.97]    [Pg.8]    [Pg.66]    [Pg.52]    [Pg.193]    [Pg.557]    [Pg.253]    [Pg.258]    [Pg.243]    [Pg.41]    [Pg.51]    [Pg.264]    [Pg.184]   


SEARCH



Ad-Atoms and Underpotential Deposition

Atomic Layer Deposition of Metal oxides

Atomic bonds Deposits

Atomic chemical vapor deposition

Atomic force microscopy deposition

Atomic layer deposition

Atomic layer deposition chemisorption

Atomic layer deposition metal oxides

Atomic layer deposition metals

Atomic layer deposition precursors

Atomic layer deposition procedure

Atomic vapor deposition

Deposition of metal atoms

Electrochemical atomic layer deposition

Epitaxial deposition atomic layer

Gold atoms deposition

Hybridization atomic layer deposition

Low-energy cluster or atom beam deposition

Open atomic layer deposition

Oxide films atomic layer deposition

Plasma-enhanced atomic layer deposition

Self-limiting processes atomic layer deposition

Thin film growth atomic layer deposition

Thin film technology atomic layer deposition

© 2024 chempedia.info