High-temperature anneals

After the thermal oxidation opening, an amorphous carbon (a-C) residue is frequently left on/over the tip or even inside the cavity close to the tube extrema [29,32] (see Fig. 3) this a-C actually plugs the CNT. To eliminate this plug, we have performed an additional high temperature annealing (2000-2100"C, 10" Torr) [22]. The furnace used for this steps was very simple the CNTs were... 

High-solids, two-component, clear, aliphatic, polyurea coating, preparation of, 252-253 High-temperature annealing, 220 High-temperature bulk polyesterifications, 61-74... 

As a start, Fig. 20 shows some profiles of total deuterium concentration after deuteration of samples prepared by implanting a fairly high concentration of phosphorus into moderately p-type material, with a subsequent high-temperature anneal to remove implantation damage. The different curves correspond to different times of deuteration at 150 °C. It is clear that for this family of cases, the data show just the early stages of penetration of the hydrogen into the p-type region. Data obtained from 200°C... 

The total electrical resistance at room temperature includes the contribution from scattering of conduction electrons by the vacancies as well as by ion-core and impurity scattering. If the experiment is repeated at a number of high temperature anneals, then the effects of temperature on the vacancy contribution can be isolated, since the other two terms will be constant providing that... 

Elenga, R., Seguela, R. and Rietsch, F., Thermal and mechanical behaviour of crystalline polyethylene terephthalate) effects of high temperature annealing and tensile drawing, Polymer, 32, 11, 1975-1981 (1991). 

The electrical properties of an anodic oxide are found to depend on the formation conditions and subsequent treatments such as annealing. As-prepared anodic oxides show high leakage currents and a diode-like behavior known from anodic oxides of valve metals. A short high-temperature anneal, which removes the bound hydroxyl, reduces the leakage current to values typical of thermal oxides, as shown in Fig. 5.9. 

In a different approach to this problem, Brenner and Garrison used molecular dynamics to examine the chemical mechanisms which lead to reordering of the atom-pairing reconstruction during atom deposition . This simulation incorporated a dissociative valence-force field potentiaF and consisted essentially of a high-temperature anneal of monolayers of silicon atoms which had been deposited on a silicon (001) reconstructed surface. 

Figure 7.11(b) shows the reciprocal space map after a high temperature anneal of the film. The effect of this has been to precipitate ont the arsenic, resnlting in the lattice parameter of the now stochiometric matrix reverting to that of the substrate. The scattering around the layer peak, which arises from the precipitates, is circnlarly symmetric and mnch more extensive than in the substrate. 

Figure 7.11 Reciprocal space map around 004 for a low temperature grown GaAs epilayer on GaAs. (a) As grown, (b) After high temperature anneal...

The evolution of the surface morphology as a result of high temperature annealing has also been studied. For nanotube arrays atop Ti foil, the structure of the 20V sample was found to stable till around 580°C (for lOV sample, it is about 500°C). No discernible change in tbe pore diameter or wall thickness was observed even after annealing for 3 hours at this temperature. It was observed that... 

Chung, G. Y., et al., Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High-Temperature Anneals in Nitric Oxide, IEEE Electron Device Letters, Vol. 22, Issue 4, April 2001, pp. 176-178. 

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