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Vapor phase growth

For adding dopiag impurities duriag vapor-phase growth, a gaseous or easily vaporizable Hquid compound is metered, added to the siUcon source gas stream, and reduced along with the siUcon compound. Typical examples are diborane, 2 phosphine, and boron tribromide, BBr. ... [Pg.529]

There is another method that has been sometimes employed in the vapor phase growth of eiystals. This method uses an evacuated eapsule as shown in 6.12.4., given on the next page. The eapsule is generally made from quartz, although platinum is sometimes used. Tlie capsule needs to be evacuated to remove any residual gas before heating is started. Otherwise, the internal pressure would build until the eapsule would explode. [Pg.293]

Another Method Sometimes Used for Vapor Phase Growth... [Pg.294]

Despite the potential for atomic-scale manipulation of interfaces displayed by molecular-beam epitaxial growth, a majority of the vapor-phase growth of silicon is accomplished by the reaction of silane with silicon substrates This... [Pg.324]

We discussed iu Section 3.12 that there is a mutual relation among spherulitic, dendritic, hopper, and polyhedral crystals, with respect to the driving force. We will see how these mutual relatious appear in real systems, using, as representative examples, low-temperature suow crystals (vapor phase growth) and high-temperature silicate crystals growiug iu silicate solutiou phases. [Pg.53]

In solution or vapor phase growth, the strength of the solute-solvent interaction energies, namely the species and types of solvent component and transport agent. [Pg.77]

A CdTe layer 12 is formed on a sapphire substrate 11. An insulating film 13 is formed at regions not corresponding to the detector elements. An isothermal vapor phase growth method is used to convert regions 16 corresponding to the detector elements. [Pg.236]

Lee, C. J., et al. (2002), Large-scale production of aligned carbon nanotubes by the vapor phase growth method, Chem. Phys. Lett., 359(1-2), 109-114. [Pg.1316]

Whiskers are normally obtained by vapor phase growth. Early in the 1970s, a new process was developed, starting from rice hulls, to produce SiC particles and... [Pg.180]

Bradley J. P., Brownlee D. E., and Veblen D. R. (1983) Pyroxene whiskers and platelets in interplanetary dust particles evidence of vapor phase growth. Nature 301, 473-477. [Pg.701]

Vapor phase growth is commonly used to produce nanowires. Starting with the simple evaporation technique in an appropriate atmosphere to produce elemental or oxide nanowires, vapor-liquid-solid, vapor-solid and other processes are made use of. [Pg.256]

There exist a variety of methods to synthesize quasi-one-dimensional nanostructured materials, which include but not limited to vapor phase growth, template-assisted synthesis, sol-gel deposition, surfactant-assisted growth, sonochemical method, hydrothermal method, and electrochemical deposition [21], Among the various methods, the electrochemical anodization method is one of the simplest and cheapest methods to synthesize ordered quasi-one-dimensional nanostructure. [Pg.262]

Ice samples have a main dispersion induced by reorientation of the water molecules and proton conduction with movement of the point defects. Here, we discuss values of the relaxation time r of the main dispersion of ice samples reported in the literature and measured by the present authors. For convenience in experimental measurements, we define two classification of ice sample as bulk ice and ice particle aggregates corresponding to two types of growth, liquid phase growth and vapor phase growth. [Pg.577]

Dielectric properties differ between ice samples grown from the vapor phase and the liquid phase the relaxation time and activation energy of ice grown from the vapor phase have lower values than of liquid growth ice. This difference suggests that vapor-phase growth introduces a crystal imperfection (such as vacancies and inclusion of gas) with increasing Bjerrum defects. [Pg.584]

There is another method that has been sometimes employed in the vapor phase growth of crystals. This method uses an evacuated capsule as shown ... [Pg.342]

Bradley JP, Harvey RP, McSween HY Jr (1996) Magnetite whiskers and platelets in the ALH 84001 martian meteorite Evidence of vapor-phase growth. Geochim Cosmochim Acta 60(24) 5149-5155... [Pg.682]

Electronic and magnetic applications One of the best applications of amorphous carbon is in heaters for the vapor phase growth of silicon wafers [192]. [Pg.286]

Antimony sulphoiodide Antimony sulphoiodide SbSl Vapor phase growth... [Pg.368]

Many techniques have been used to prepare ZnO-based thin films and nanostructures, such as CVD, electron beam evaporation (EBE), MBE, pulsed laser deposition (PLD), sol-gel, spray pyrolysis, sputtering, and vapor phase growth. To prepare ZnO films or nanostructures, thermal oxidation of Zn and ZnS in air has also been used [124]. However, as for ZnS nanocrystals, wet methods, in this case wet oxidation, are still important techniques for SC processing [112]. [Pg.243]

The nanomaterials chapter is also carefully surveyed, focusing on nomenclature, synthetic techniques, and applications taken from the latest scientific literature. The 2nd edition has been significantly updated to now include nanotoxicity, vapor-phase growth of 0-D nanostructures, and more details regarding synthetic techniques and mechanisms for solution-phase growth of various nanomaterials. Graphene, recognized by the 2010 Nobel Prize in Physics, is now also included in this edition. [Pg.749]

The first concept, the formation of a template layer, is suggested to enhance adsorption of the first monomer onto the surface as a single monolayer. A template layer is a self-assembled monolayer deposited fi om solution, which exposes a reactive functionality toward the first monomer, prior to introduction of the substrates to vapor phase assembly. This template layer dictate epitaxial growth and ensure the second concept of self-limiting growth of only one monolayer. Therefore, this layer bridges solution and vapor phase growth mechanisms in a unified concept... [Pg.403]


See other pages where Vapor phase growth is mentioned: [Pg.528]    [Pg.66]    [Pg.67]    [Pg.117]    [Pg.128]    [Pg.125]    [Pg.528]    [Pg.529]    [Pg.187]    [Pg.425]    [Pg.1202]    [Pg.497]    [Pg.238]    [Pg.5]    [Pg.685]    [Pg.687]    [Pg.256]    [Pg.3232]    [Pg.304]    [Pg.307]    [Pg.459]    [Pg.472]    [Pg.102]    [Pg.1981]    [Pg.663]    [Pg.402]   
See also in sourсe #XX -- [ Pg.292 ]




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Vapor phase epitaxy growth

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