Ultraviolet resist, deep

L.M. Buchmann, and W. Finkelstein, Chemically amplified deep ultraviolet resist for positive tone ion exposure, J. Vac. Sci. Technol. B 15, 2355 (1997). 

Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, Acid and base diffu sion in chemically amplified DUV resists, Microelectron. Eng. 35, 149 (1997) T. Itani, H. Yoshino, and S. Hashimoto, Photoacid hulkiness effect on dissolution kinetics in chemically amplified deep ultraviolet resists, J. Vac. Sci. Technol. B. 13(6), 3026 (1995). 

Acrylic is a generic name for derivatives of acrylic acid, of which methyl methacrylate is the most important. Polymerization is controlled to produce chain length of 800 to 3,000 monomer units. A small amount of plasticizer such as dibutyl phthalate may be added before bulk polymerization to assist in deep molding. The outstanding property of polymethyl metliacrylate is 0 transparency resistance to ultraviolet radiation from fluorescent lamps and ability to be... 

Collier, D., and Pantley, W., Deep Ultraviolet Coatings Resist Optical Damage, Laser Focus World, pp. 77-82 (Sept. 1997)... 

Acid—base reactions, anhydrous hydrazine, 13 567-568 Acid Black 63, 6 559 Acid blue, herbicide/algicide for aquaculture in U.S., 3 214t Acid catalysis, deep-ultraviolet chemically amplified resists based on, 15 163-181 Acid catalysts, 10 493. See also Acidic catalysts... 

Deep-ultraviolet chemically amplified resists, 15 163-181 Deepwater barges, 25 327 Deep-well turbine pumps, 21 68 Deesterification, of aspartame, 24 227 DEET, 2 549t Defaunation, 10 871 D,E,F color scale, 7 310 Defect Action Levels (DALs), 23 160 Defects, in silicon-based semiconductors, 22 232... 

Films of polyphthalaldehyde, sensitized by cationic photoinitiators, have been imaged at 2-5-mJ/cm in the deep ultraviolet (DUV) (see Section 3.10), at 1 pC/cm (20 kV) electron beam radiation and at an unspecified dose of Al-A x-ray radiation. The ultimate utility of this "self-developing" resist system will depend upon its efficacy as an etch barrier. It seems clear that such materials would not serve as adequate etch masks for... 

Louis, D. Laporte, P. Molle, P. Ullmann, H. Deep ultraviolet positive resist image by dry etching (DUV PRIME) a robust process for 0.3 pm contact holes. Proc. SPIE 1994, 2195, 497-505. 

P. van Pelt, Processing of deep ultraviolet (UV) resists, Proc. SPIE 275, 150 (1981). 

Many polymers are altered on exposure to ultraviolet radiation, and this has led to the development of photolithographic techniques using conventional UV radiation from a merciny vapor lamp with an emission spectrum of A, = 430 nm, 405 nm, and 365 nm. When resolution of features of less than 2 pm is required, then deep UV soinces with A 150 to 250 nm may be used, provided resists that absorb in this wavelength region can be selected. 

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