Transistor Device

Different silicon dioxide layers are grown at temperatures between 850 °C and 1000 °C by wet thermal oxidation. During the tests, the best electrical parameters could be achieved at a process temperature of 960 °C and a maximum layer thickness of 150 nm. 

Different layers deposited by low pressure chemical vapour deposition (LPCVD) or by plasma enhanced chemical vapour deposition (PECVD) were examined as further inorganic gate dielectrics. Insulating layers of tetraethylor-thosilicate (TEOS) oxide, deposited by the thermal pyrolysis of the vapour 

Additionally, low-temperature oxides (LTO) were examined. The deposition process uses triethylsilane and oxygen at 550 °C. Table 18.1 gives an overview of the different inorganic gate dielectrics, their deposition temperatures, the deposited layer thicknesses and their permittivities. 

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F. Uslu, S. Ingebrandt, D. Mayer, S. Bocker-Meffert, M. Odenthal, and A. Offenhausser, Labelfree fully electronic nucleic acid detection system based on a field-effect transistor device. Biosens. Bioelectron. 19, 1723-1731 (2004). 

M. Zayats, O.A. Raitman, V.I. Chegel, A.B. Kharitonov, and I. Willner, Probing antigen-antibody binding processes by impedance measurements on ion-sensitive field-effect transistor devices and complementary surface plasmon resonance analyses development of cholera toxin sensors. Anal. Chem. 74, 4763-4773 (2002). 

Experimentally, the charge mobilities are obtained by time-of-hight-measure-ments or by characterizing held-effect-transistor devices made of the materials. In time-of flight experiments, the mobility p is directly given by... 

S. P. Pogprelova, M. Zayats, T. Bourenko, A. B. Kharitonov, O. Lioubashevski, E. Katz, and L Willner, Analysis of NAD(P) /NAD(P)H Cofactors by Imprinted Polymer Membranes Associated with Ion-Sensitive Field-Effect Transistor Devices and Au-Quartz Crystals, Anal. Chem. 2003, 75, 509. 

Thin-film Transistor Device Structures 11.3.2.1 Amorphous Silicon TFTs... 

Thin-film Transistor Device Characteristics 11.3.3.1 a-Si H TFTs... 

Thin film transistor devices were fabricated by spin coating using a 1% solution of the selected polythiophene dissolved in chlorobenzene and drying in vacuo at 80°C for 20 hours. No precautions were taken to exclude oxygen, moisture, or light during device fabrication. From transistors with dimensions of 5000 x 60 m, electrical properties were determined as summarized in Table 1. 

TABLE 1. Effect of poly[5,5 -bis(3-dodecyl-2-thienyl)-2,2 -dithiophene] of varying molecnlar weights of the cnrrent invention on mobility and cnrrent on/off ratio when spin casted onto thin film transistor devices. 

In addition to their use as photoreceptors, these materials are of interest for a wide range of other electronic applications. Of these, electroluminescent, photorefractive, photovoltaic, and transistor devices are the most commonly... 

This book is intended for researchers and students of imaging science and technology. It will be of particular value to scientists involved in the research, development, and commercial implementation of xerographic technologies. In addition, those involved in related technologies that make use of organic materials, such as electroluminescent, photoreffactive, photovoltaic, and transistor devices, will find the material relevant. 

ZnO TRANSPARENT THIN-FILM TRANSISTOR DEVICE PHYSICS... 

Key words Transparent thin-film transistor, device physics, effective mobility, field-effect mobility, saturation mobility, average mobihty, incremental mobihty, output conductance... 

ZnO transparent thin-film transistor device physics... 

ZnO Transparent Thin-Film Transistor Device Physics J. F. Wager... 

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