Held effect transistors

Experimentally, the charge mobilities are obtained by time-of-hight-measure-ments or by characterizing held-effect-transistor devices made of the materials. In time-of flight experiments, the mobility p is directly given by... 

ADVANCES IN ENZYMATICALIY COUPLED HELD EFFECT TRANSISTORS... 

Minimization of the density of slow states and interface states is of technological importance for held effect transistors. Presently available nitrides are of sufficient quality that the slow states have no signihcant effect on electrons at normal temperatures, but some hole trapping occurs. The use of a bottom nitride structure reduces the interface state density to an almost negligible amount. The remaining problem associated with the interface of the transistors is the generation of metastable interface defects in the a-Si H him due to the accumulation bias. 

Electrochemical sensors enzyme electrodes and held effect transistors... 

Torsi, L. et al., Intrinsic transport properties and performance limits of organic held-effect transistors, Science 272, 1462-1464, 1996. 

Knopfmacher, 0., Hammock, M.L., Appleton, A.L., Schwartz, G., Mei, J., Lei, T., Pei, J, Bao, Z., 2014. Highly stable organic polymer held-effect transistor sensor for selective detection in the marine environment. Nat. Commun. 5,149-168. 

Lan, Y.K., Yang, C.H., Yang, H.C., 2010. Theoretical investigations of electronic structure and charge transport properties in polythiophene-based organic held-effect transistors. Polym. Int. 59,16-21. 

MOSFET Metal oxide semiconductor held effect transistor... 

T. Oyamada, H. Sasabe, C. Adachi, S. Okuyama, N. Shimoji and K. Matsushige, Electroluminescence of 2,4-bis(4-(2 -thiophene-yl)phenyl)thiophene in organic light-emitting Held-effect transistors, Appl. Phys. Lett., 86, 093505 (2005). 

Yongsang, K., Hyejung, K., Hoi-Jun, Y., 2010. Electrical characterization of screen-printed circuits on the fabric. Advanced Packaging, IEEE Transactions on 33, 196—205. Zaumseil, J., Sirringhaus, H., 2007. Electron and ambipolar transport in organic Held-effect transistors. Chemical Reviews 107, 1296—1323. 

Schottky barrier, metal oxide semiconductor (MOS), and held-effect transistors (MOSFETs) sensors are other types of gas sensor which involve metal films. These types of sensors were pioneered by Lundstrom et al. (1975). Besides silicon, compound semiconductors such as GaAs, InP, GaN, Ga Oj, and SiC have been alternatively employed as substrate materials for the above-mentioned... 

Liu, H. Q., C. H. Reccius, and H. G. Craighead (2005). Single electrospun regio-regular poly(3-hexylthiophene) nanofiber held-effect transistor. Applied Physics Letters 87(25) 253106. 

JFET junction field-eifect transistor MESFET MFTF metal Schottky Held-effect transistor Mirror Fusion Test Facility... 

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