Threshold devices thin film transistors

Watanabe et al. also constructed field effect transistors from hexacene single crystals [32]. The authors report an averaged (14 devices) mobility of 0.88 cm s with a threshold at 34 V and an on/off ratio of 10" -10. The best hole mobility observed was 4.28 cm s. The conductivity of crystalline hexacene (2.21 x 10 S m ) was slightly higher than that of pentacene [32]. The hole mobilities of hexacene thin films have been measured very recently [34]. 

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