Low-pressure chemical vapour deposition

Verheijen, J., Bongaerts, P., and Verspui, G., Low Pressure Chemical Vapour Deposition of Temperature Resistance Colour Filters, Proc. 10th. Int. Conf. on CVD, (G. Cullen, ed.), pp. 977-981, Electrochem. Soc., Pennington, NJ 08534 (1987)... 

Figure 2. The low-loss plasmon spectrum of a) low pressure chemical vapour deposition diamond films b) diamond residue from the Allende carbonacious chondrite.

Pai, M. P., Musale, D. V. and Kshirsagar, S. T. (1998), Low-pressure chemical vapour deposition of diamond films in a radio-frequency plasma-assisted hot-filament reactor. Diam. Relat. Mater., 7(10) 1526-1533. 

The integrated thermopile (1.6x10 mm) was manufactured by the following method. A quartz chip (25.2 x 14.8 x 0.6 mm) was used as a substrate instead of a silicon wafer, in order to reduce the heat conductivity of the chip. A 0.5 jim thick layer of polysilicon was deposited using LPCVD (low-pressure chemical vapour deposition) onto the quartz substrate. The layer was boron-doped using... 

Levesque A, Bouteville A (2001) Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapour deposition using electrochemical polarization. J Phys IVI1 Pr3-915-920... 

Hitehman ML, Kane J, Widmer AE (1979) Poly silicon growth kinetics in a low pressure chemical vapour deposition reactor. Thin Solid Films 59 231-247... 

Different layers deposited by low pressure chemical vapour deposition (LPCVD) or by plasma enhanced chemical vapour deposition (PECVD) were examined as further inorganic gate dielectrics. Insulating layers of tetraethylor-thosilicate (TEOS) oxide, deposited by the thermal pyrolysis of the vapour... 

A combination of low-pressure chemical vapour deposition (LPCVD) and plasma-enhanced chemical vapour deposition (PEC VD) was used to create a new multilayer composite SiOx/poly(paraxyly 1 ene) material for hermetic sealing of miniaturised smart micro-electromechanical systems (MEMS) implants (Hogg et al., 2014). Tailoring the thickness ratio between the layers, the percolative pathway and thereby, the permeation for direct water exposure could be considerably reduced compared to conventional parylene-C single layers with the same thickness. 

Non-volatile MNOS and MNS memory structures with an embedded sheet of Si nanocrystals have been prepared by low pressure chemical vapour deposition using a S13N4 control layer and SiO2 or S13N4 tunnel layers. Si nanocrystals improved the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V was achieved for charging pulses of 9 V and 10 V, 100 ms, respectively. 

In this work, our goal has been to create memory structures with a thin Si NC layer by low pressure chemical vapour deposition (LPCVD) using a SiO2 or a Si3N4 tunnel layer and a Si3N4 control layer, i.e. to fabricate MNOS and MNS structures with an embedded Si NC layer. 

Phase relations in nitrides of IVA and VA elements and actinides have been reviewed [5]. GaN films have been prepared by the low-pressure chemical vapour deposition (CVD) of NH3 and GaCCHlj by Flowers et al. [9]. 

S. Ecoffey, D. Bouvet, A. M. lonescu, and P. Fazan. Low pressure chemical vapour deposition of nanograin polysilicon ultra thin films. Nanotechnology 13, 290 293(2002). 

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