Transistor devices, high-performance

Wu, H. Liu, J. Shi, J. Spencer, M. 2006. Thin film transistor using GaN nanoparticles. Presented at the 2006 Lester Eastman Conference on High-Performance Devices, Ithaca, NY Aug. 3, 2006. 

The power bank contains an adequate number (generally several tens) of linear solid-state power devices, such as transistors or power Mosfets. Because of the availability of modern power Mosfets that combine high performance with easy control, classical transistors are nowadays no longer used in applications of this type (in our case, we use channel-N and channel-P Mosfets for the positive and negative power supply sections, respectively). 

Ding L, Wang S, Zhang Z et al (2009) Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors scaling and comparison with Sc-contacted devices. Nano Lett 9 4209-4214... 

Kymissis, 1., Dimitrakopoulos, C.D., and Purushothaman, S., High-performance bottom electrode organic thin-fihn transistors, IEEE Trans. Electron Devices 48, 1060-1064, 2001. 

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