Titanate , barium bismuth

The known lead-free piezoelectric materials can be categorized into three broad families (i) perovskite titanates such as barium titanate and bismuth... 

Other. Insoluble alkaline-earth metal and heavy metal stannates are prepared by the metathetic reaction of a soluble salt of the metal with a soluble alkah—metal stannate. They are used as additives to ceramic dielectric bodies (32). The use of bismuth stannate [12777-45-6] Bi2(Sn02)3 5H20, with barium titanate produces a ceramic capacitor body of uniform dielectric constant over a substantial temperature range (33). Ceramic and dielectric properties of individual stannates are given in Reference 34. Other typical commercially available stannates are barium stannate [12009-18-6] BaSnO calcium stannate [12013 6-6] CaSnO magnesium stannate [12032-29-0], MgSnO and strontium stannate [12143-34-9], SrSnO. ... 

Some examples of ceramic semiconductors are magnetite (Fe304), doped barium titanate and doped zinc oxide. By for instance doping zinc oxide with bismuth, cobalt, manganese or antimony, you can vary the resistance of zinc oxide. 

Metals passivation in the resid FCC unit may also be accomplished through the addition of metal traps. Tin, barium titanate, strontium titanate, magnesium oxide, manganese oxide, and specialized zeolite types and contents have all been used for vanadium trapping. In addition, zeolites coated with alumina and catalyst particles coated with rare earth have also been applied to resist vanadium poisoning. Antimony, bismuth, and specialized active high crystalline aluminas have all been used successfully to counteract the negative effect of nickel in the FCC unit. 

Ammonium citrate dibasic Barium fluoride Barium nitrate Bismuth Calcium fluoride Calcium titanate Carbon Cobalt sulfate (ous) Gold Hydrogen peroxide y-Linolenic acid Niobium oxide Nitrogen Palmitoleic acid Polyester carbonate resin Selenium Sodium chlorite Strontium titanate electronics applies. 

Attempts are still being made to produce improved bolometers operating at or near room temperature. These include vanadium oxide metal-semiconductor transition devices [8.7], bismuth-lead layers [8.8], metallic nickel [8.8a], and aluminium [8.8b], silicon carbide [8.8c], and doped barium titanate ceramic [8.8d] elements. New designs of radiometers and power meters using thermistor bolometers have been described [8.9-11]. Microelectronic techniques have been used to produce fast but sensitive (NEP 10 WHz at 25 MHz and 100 pm wavelengths) uncooled for improved bolometers [8.11a]. 

Bismuth Stannate. Bi2(Sn03)3 sometimes added to barium titanate bodies to modify their dielectric properties particularly to produce bodies having an intermediate dielectric constant (1000-1250) with a negligible temperature coefficient. 

Robertson, J. C. W. Chen (1999) Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalite. Applied Physics Letters, 74,1168-1170. 

BaTi409 shows a characteristic strong Raman band at 860 cm . This is absent for other barium titanates." Low-temperature Raman spectra have been reported for bismuth titanate (Bi2Tt40u) ceramics. There was evidence for an order-disorder transition at about 250 K." ... 

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