Thin growth

At natural growth velocities the stabilising influence of surface tension on the interface is negligible and the stability condition (6) practically becomes G < 1. This has been reasonably confirmed in thin growth cell freezing experiments with an externally imposed temperature gradient Wavelengths of the initial perturbations... 

Thinning Growth rate and hence rotation length... 

Exerowa and co-workers [201] suggest that surfactant association initiates black film formation the growth of a black film is discussed theoretically by de Gennes [202]. A characteristic of thin films important for foam stability, their permeability to gas, has been studied in some depth by Platikanov and co-workers [203, 204]. A review of the stability and permeability of amphiphile films is available [205]. 

The following two sections will focus on epitaxial growth from a surface science perspective with the aim of revealing the fundamentals of tliin-film growth. As will be discussed below, surface science studies of thin-film deposition have contributed greatly to an atomic-level understanding of nucleation and growth. 

Lewis B and Anderson J C 1978 Nucleation and Growth of Thin Films (New York Academic)... 

Venables J A, Spiller G D T and Hanbucken M 1984 Nucleation and growth of thin-films Rep. Prog. Phys. 47 399... 

Stoyanov S and Kashchiev D 1981 Thin film nucleation and growth theories a confrontation with experiment Current... 

The growth of a well ordered fullerene monolayer, by means of molecular beam epitaxy, has been used for the controlled nucleation of single crystalline thin films. The quality and stability of molecular thin films has been shown... 

Hebard A F, Zhou O, Zhong Q, Fleming R M and Fladdon R C 1995 Cgq films on surface-treated silicon recipes for amorphous and crystalline growth Thin Soiid Fiims 257 147-53... 

Tanigaki K, Kuroshima S and Ebbesen T W 1995 Crystal growth and structure of fullerene thin films Thin Soiid Fiims 257 154-65... 

Koma A 1992 Van Der Waals epitaxy—a new epitaxial growth method for a highly lattice mismatched system Thin Soiid Fiims 216 72-6... 

Jones R, Tredgold R H, Hoorfar A, Allen R A and Hodge P 1985 Crystal-formation and growth in Langmuir-Blodgett multilayers of azobenzene derivatives—optical and structural studies Thin Solid Films 134 57-66... 

Extended defects range from well characterized dislocations to grain boundaries, interfaces, stacking faults, etch pits, D-defects, misfit dislocations (common in epitaxial growth), blisters induced by H or He implantation etc. Microscopic studies of such defects are very difficult, and crystal growers use years of experience and trial-and-error teclmiques to avoid or control them. Some extended defects can change in unpredictable ways upon heat treatments. Others become gettering centres for transition metals, a phenomenon which can be desirable or not, but is always difficult to control. Extended defects are sometimes cleverly used. For example, the smart-cut process relies on the controlled implantation of H followed by heat treatments to create blisters. This allows a thin layer of clean material to be lifted from a bulk wafer [261. 

Ott A W, Kiaus J W, Johnson J M and George S M 1997 Ai203 thin fiim growth on Si(IOO) using binary reaction sequence chemistry Thin Solid Films 292 135-44... 

The requirements of thin-film ferroelectrics are stoichiometry, phase formation, crystallization, and microstmctural development for the various device appHcations. As of this writing multimagnetron sputtering (MMS) (56), multiion beam-reactive sputter (MIBERS) deposition (57), uv-excimer laser ablation (58), and electron cyclotron resonance (ECR) plasma-assisted growth (59) are the latest ferroelectric thin-film growth processes to satisfy the requirements. 

Dislodging of Cake by Reverse Flow. Intermittent back-flushing of the filter medium can also be used to control cake growth, leading to filtration through thin cakes in short cycles. Conventional vacuum or pressure filters can be modified to counter the effects of the forces during the back-flush (23,24). 

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