Thin film growth studies

The principal applications of REELS are thin-film growth studies and gas-surface reactions in the few-monolayer regime when chemical state information is required. In its high spatial resolution mode it has been used to detect submicron metal hydride phases and to characterize surface segregation and difRision as a function of grain boundary orientation. REELS is not nearly as commonly used as AES orXPS. 

In-situ emd thin-film growth studies of SiOa on Si have been performed by a number of investigators to study the interface chemistry (21,22,35,36). Hollinger, et al.(35) exposed atomically clean silicon to a pure oxygen ambient at 5 x 10 Ibrr pressiue at 700 C in their analysis chamber. Spectra were excited with Mg K-a x-rays which produce 1154 eV Si 2p electrons with an escape depth of approximately 34 A (32). Both the O Is and Si 2p peaks were followed as a function of exposure and... 

Controlled Thin-Film Growth Studies. The pristine adsorption of O2 onto the surface of Al(l 11) was studied by McConville et al. [66]. This was a very involved photoelectron study that was reviewed in detail by Bradshaw [67]. McConville et al. report the Al°(2p) 3/2 to 1/2 split with the Al°(2p3/2) at 72.5 eV. Several intermediate (chemisorption ( )) oxidized Al peaks were also detected, producing, among others, Al (2p) peaks split from the metal by 1.5 eV. Then, finally, after coverage of several monolayers of purported AI2O3, an Al (2p) was generated split from that of Al° by 2.7 eV. 

There were a number of excuses made, and a number of solutions suggested for those first deposits, such as problems with valves, with gaskets, and with substrates [41]. The next set of CdTe thin-film growth studies were made using a H-cell (Fig. 3b) [42, 58]. The substrates were simply suspended in the H-cells, and the solutions were pumped in from the bottom and then drained out. This eliminated problems with gaskets and bubbles, as there were no gaskets, and... 

Furthermore, LEED is an important tool to study thin film growth, and can reveal the mechanism of thin film formation as well as the final stmcture of mono/multi topmost layers versus substrate [Attard et al., 1995]. 

These compounds were studied as potential single-source precursors. However, although they gave clean deposition routes to powders of II VI materials, their nonvolatility means that thin-film growth by conventional CVD techniques was hampered, although it could be improved using new delivery techniques. 

The diacetylene monomer employed in the thin film growth technique pioneered by Langmuir and Blodgett (12) must have a strongly polar "head group" and a nonpolar-"tail." The monomer we have used in our studies, CH3 - (CH2)i5 - C = C - C = C -(CH2)g - COOH, has a long alkyl group as the nonpolar "tail."... 

TAD has been demonstrated to be very effective for studying the long-time behavior of defects produced in collision cascades [25,26]. An MD/TAD procedure has also been applied to the simulation of thin-film growth of Ag... 

The growth of thin films on solid surfaces is important in technology, and nucleation is one of the keys for understanding the growth mechanism. The ability of STM to image local structures down to atomic detail makes it ideal for the study of nucleation, thin film growth, and crystal growth. 

Stagnation flows represent a very important class of flow configurations wherein the steady-state Navier-Stokes equations, together with thermal-energy and species-continuity equations, reduce to systems of ordinary-differential-equation boundary-value problems. Some of these flows have great practical value in applications, such as chemical-vapor-deposition reactors for electronic thin-film growth. They are also widely used in combustion research to study the effects of fluid-mechanical strain on flame behavior. 

W. Jacob, C. Hopf, A. von Keudell, M. Meier, and T. Schwarz-Selinger Particle-beam experiment to study heterogeneous surface reactions relevant to plasma-assisted thin film growth and etching. Rev. Sci. Instrum. 74, 5123 (2003)... 

There are, however, a few planar aromatic molecules with different bulk structures which do show the existence of such orientational precursors. One of these exceptions is PTCDA (3,4,9,10-perylenetetracarboxylic dianhydride) which has been extensively studied in the past and is commonly considered as a prototype system for organic thin film growth [62, 63]. Especially on Ag(l 11) an epitaxial growth of well-ordered PTCDA films was observed where molecules adopt the same arrangement as in the (102)-plane of the bulk structure of PTCDA [62]. An examination of this (102)-plane reveals that this... 

The difficulty facing the reviewer is the almost complete incompatibility between direct kinetic measurements and electronic/compositional studies of metal deposits. Kinetic results have been used to construct models of the surface metal phase with varying degrees of geometric complexity and/or thin film growth mode, but in all cases the metal is assumed a priori to be on top of the semiconductor and to desorb from it in some classical way. Unfortunately, direct measurement of the interface chemistry... 

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