Thin film growth schematic

Figure 8.1. Schematic view of thin-film growth during one SILAR cycle, (a) cation adsorption cation O anion (b) rinsing (c) anion reaction anion o cation and (d) rinsing. Reprinted with permission from Lindroos 1997.

Fig. 2.4. The often dramatic effects bottom contacts can have on molecular ordering in organic semiconductors like pentacene. A. Schematic diagram of the type of disorder introduced in pentacene s lamellar structure as thin-film growth encounters a step, for example...

Fig. 14 Schematic diagrams of the three different modes of the thin film growth (a) island, (b) layer, and (c) layer + island.

Fig. 10 Schematic representation of the nanoreplication processes from block copolymers, a Growth of high-density nanowires from a nanoporous block copolymer thin film. An asymmetric PS-fc-PMMA diblock copolymer was aligned to form vertical PMMA cylinders under an electric field. After removal of the PMMA minor component, a nanoporous film is formed. By electrodeposition, an array of nanowires can be replicated in the porous template (adapted from [43]). b Hexagonally packed array of aluminum caps generated from rod-coil microporous structures. Deposition of aluminum was achieved on the photooxidized area of the rod-coil honeycomb structure (Taken from [35])...

The nucleation and growth mechanism of CdTe thin films at polycrystalline gold surface [203] and on the rough face side of a Si(lOO) were studied as a function of different potential steps. Schematic representation of CdTe formation is shown in [204]. 

Many different embodiments of the CVD techniqne are available for the growth of thin films, and the readers is referred to excellent recent monographs for more detail. " The last review on metal-organic precursors that appeared in this encyclopedia contained a detailed overview of thermal CVD processes, schematics of several reactors, as well as a listing of common variants of thermal CVD processes. In addition to these well-known techniques, several new CVD techniqnes have gained importance in recent years. 

Generally speaking, PEVD is a modified form of chemical vapor deposition (CVD). A comparison between PEVD and conventional CVD is schematically shown in Figure 1 for a product (D) formed from reactants (A) and (B). In a CVD process, both reactants (A) and (B) are supplied through a vapor phase at the same side of a solid substrate (E). They react chemically at the surface of the solid substrate (E), aided by some type of catalytic effect, to form a desired product (D). In a PEVD process, one reactant (A) is transported from one side (source) of a solid substrate (E) to the other side (sink) under well-controlled thermodynamic and kinetic conditions. At the sink side, reaction with (B) occurs to form (D). Further growth of (D) into a continuous thin film with the desired thickness in a PEVD process also relies on (A) transported in the solid state now through (E) and (D) to react with (B). 

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