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Interface chemistry

R. D. Void and M. J. Void, Colloid and Interface Chemistry, Addison-Wesley, Reading, MA. 1983. [Pg.218]

H. van Olphen and K. J. Mysels, eds.. Physical Chemistry Enriching Topics from Colloid and Surface Science, Theorex (8327 La Jolla Scenic Drive, La Jolla, CA), 1975. R. D. Void and M. J. Void, Colloid and Interface Chemistry, Addison-Wesley, Reading, MA, 1983. [Pg.252]

Amsterdam, 2001, 326 (b) T. Sugimoto, Y. Shintoku, A. Muramatsu, Proceedings of 50th Symposium on Colloid Interface Chemistry, Chemical Society of Japan, Saga (1997) 320. [Pg.399]

Interaction parameters for polymer blends, 20 322 in surfactant adsorption, 24 138 Interaortic balloon pump, 3 746 Intercalated disks, myocardium, 5 79 Intercalate hybrid materials, 13 546-548 Intercalation adducts, 13 536-537 Intercalation compounds, 12 777 Intercritical annealing, 23 298 Interdiffusion, 26 772 Interdigitated electrode capacitance transducer, 14 155 Interesterification, 10 811—813, 831 Interest expense, 9 539 Interface chemistry, in foams, 12 3—19 Interface metallurgy materials, 17 834 Interfaces defined, 24 71... [Pg.481]

Void, R.D. Void, M.J. "Colloid and Interface Chemistry" Addison-Wesley Reading, Mass., 1983 Chaps. 7,9. [Pg.16]

Tully DC, Frechet JMJ. Dendrimers at surfaces and interfaces chemistry and applications. Chem Commun 2001 1229-1239. [Pg.305]

Hunt SW, Roeselova M, Wang W, Wingen LM, Knipping EM, Tobias DJ, Dabdub D, Finlayson-Pitts BJ (2004) Formation of Molecular Bromine from the Reaction of Ozone with Deliquesced NaBr Aerosol Evidence for Interface Chemistry. J Phys Chem A 108 11559... [Pg.382]

Ion beams provide useful information either as a diagnostic tool or as a precision etching method in. adhesive bonding research. The combination of SIMS with complementary methods such as ISS or AF.S provides a powerful tool for elemental end limited structural characterization of metals, alloys and adhesives. The results shown here indicate that surface chemistry (and interface chemistry) can be decidedly different from bulk chemistry. Often it is this chemistry which governs the quality and durability of an adhesive bond. These same surface techniques also allow an analysis of the locus of failure of bonded materials which fail in service or test. [Pg.237]

Experimental determinations of barrier heights on oxide semiconductor interfaces using photoelectron spectroscopy are rarely found in literature and no systematic data on interface chemistry and barrier formation on any oxide are available. So far, most of the semiconductor interface studies by photoelectron spectroscopy deal with interfaces with well-defined substrate surfaces and film structures. Mostly single crystal substrates and, in the case of semiconductor heterojunctions, lattice matched interfaces are investigated. Furthermore, highly controllable deposition techniques (typically molecular beam epitaxy) are applied, which lead to films and interfaces with well-known structure and composition. The results described in the following therefore, for the first time, provide information about interfaces with oxide semiconductors and about interfaces with sputter-deposited materials. Despite the rather complex situation, photoelectron spectroscopy studies of sputter-deposited... [Pg.130]

Effects of oxidation on interface chemistry and correlation with interface mechanical properties. [Pg.300]

Some general conclusion from these studies are (1) Cu/PI TFML structures have excellent thermal and mechanical stability under extremes of temperature, humidity, and radiation (2) the adhesion of polyimide is highly dependent on interface chemistry and surface preparation (3) PI rapidly absorbs and desorbs water, which has an appreciable effect on its dielectric properties and thus the electrical charactersitics of TFML interconnections the electrical design tolerances must accommodate these variations or the package must be hermetically sealed (4) properly baked and sealed TFML packages can maintain MIL-STD internal moisture levels of less than 5000 ppm at 100°C. [Pg.477]

D. C. Tully, J.M.J. Frechet, Dendrimers at Surfaces and Interfaces Chemistry and Applications , Chem. Commun., 1229 (2001)... [Pg.72]

Ogata Y, Imai E, Honda H, Hatori K, Matsuno K. Hydrothermal circulation of seawater through hot vents and contribution of interface chemistry to prebiotic synthesis. Orig. Life Evol. Biosph. 2000 30 527-537. [Pg.2012]

As a probe of lattice vibrations, Raman spectroscopy is very sensitive to intrinsic crystal properties and extrinsic stimuli, especially in semiconductors. It may be employed to study crystal structure and quality, crystal orientation, optical interactions, chemical composition, phases, dopant concentration, surface and interface chemistry, and local temperatme or strain. As an optical technique, important sample information may be obtained rapidly and nondestructively with minimal sample preparation. Submicron lateral resolution is possible with the use of confo-cal lenses. These features have made it a vital tool for research labs studying semiconductor-based technologies. They also are increasingly important for the study of semiconductor NWs fabricated by both top-down and bottom-up approaches since many of the common characterization methods used with bulk crystals or thin films cannot be applied to NWs in a direct manner. [Pg.478]

Davis J. and Kent D. (1990) Surface complexation modeling in aqueous geochemistry. In Mineral-Water Interface Chemistry, Reviews in Mineralogy 23 (eds. M. Hochella and A. White). Mineralogical Society of America, Washington, DC, pp. 177-260. [Pg.4793]

Thus, the rate and selectivity of catalyzed reactions over molecular sieve catalysts are influenced by factors that are affiliated with the specific interface chemistry (chemical induced selectivity) and the constraints induced by the steric limitations (shape selectivity). This advantage, however, also induces drawbacks that can only be partly overcome by adjustment of the mesoscopic properties of the molecular sieve. [Pg.364]


See other pages where Interface chemistry is mentioned: [Pg.50]    [Pg.46]    [Pg.173]    [Pg.2]    [Pg.358]    [Pg.96]    [Pg.462]    [Pg.1]    [Pg.219]    [Pg.125]    [Pg.151]    [Pg.153]    [Pg.155]    [Pg.251]    [Pg.297]    [Pg.179]    [Pg.218]    [Pg.405]    [Pg.7]    [Pg.171]    [Pg.706]    [Pg.509]    [Pg.139]   
See also in sourсe #XX -- [ Pg.194 , Pg.195 , Pg.196 , Pg.197 , Pg.198 , Pg.199 , Pg.200 , Pg.201 , Pg.202 , Pg.203 , Pg.204 , Pg.205 , Pg.206 , Pg.207 , Pg.208 , Pg.251 ]

See also in sourсe #XX -- [ Pg.292 ]




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