Temperature electronic devices

Silicon dominates microelectronics and there is no any other semiconductor to replace it in the foreseeable future. The only exception may be special applications, such as high temperature electronic devices operating above 200 °C, where silicon carbide represents a promising material which can be processed with a silicon-compatible technology. 

Polyimides of 6FDA and aUphatic diamines with good low temperature processkig and low moisture swelling are known to be useful as hot-melt adhesives (109). Aluminum strips bonded by this polymer (177°C/172 kPa (25 psi) for 15 min) exhibited a lap-shear strength of 53 MPa (7690 psi) at room temperature and 35 MPa (5090 psi) at 100°C. The heat- and moisture-resistant 6F-containing Pis useful ki electronic devices are prepared from... 

Thermosetting-encapsulation compounds, based on epoxy resins (qv) or, in some niche appHcations, organosiHcon polymers, are widely used to encase electronic devices. Polyurethanes, polyimides, and polyesters are used to encase modules and hybrids intended for use under low temperature, low humidity conditions. Modified polyimides have the advantages of thermal and moisture stabiHty, low coefficients of thermal expansion, and high material purity. Thermoplastics are rarely used for PEMs, because they are low in purity, requHe unacceptably high temperature and pressure processing conditions. 

Titanium alloyed with niobium exhibits superconductivity, and a lack of electrical resistance below 10 K. Composition ranges from 25 to 50 wt % Ti. These alloys are P-phase alloys having superconducting transitional temperatures at ca 10 K. Thek use is of interest for power generation, propulsion devices, fusion research, and electronic devices (52). 

Thermal Conductivity. The value of 2000 W/(m-K) at room temperature for Type Ila natural stones is about five times that of Cu, and recent data on 99.9% isotopicaHy pure Type Ila synthesized crystals ate in the range of 3300—3500 W/(m-K) (35). This property combined with the high electrical resistance makes diamond an attractive material for heat sinks for electronic devices. 

MiscelEneous. Small quantities of cobalt compounds are used in the production of electronic devices such as thermistors, varistors, piezoelectrics (qv), and solar collectors. Cobalt salts are useful indicators for humidity. The blue anhydrous form becomes pink (hydrated) on exposure to high humidity. Cobalt pyridine thiocyanate is a useful temperature indicating salt. A conductive paste for painting on ceramics and glass is composed of cobalt oxide (62). 

This kind of microstructure also influences other kinds of conductors, especially those with positive (PTC) or negative (NTC) temperature coefficients of resistivity. For instance, PTC materials (Kulwicki 1981) have to be impurity-doped polycrystalline ferroelectrics, usually barium titanate (single crystals do not work) and depend on a ferroelectric-to-paraelectric transition in the dopant-rich grain boundaries, which lead to enormous increases in resistivity. Such a ceramic can be used to prevent temperature excursions (surges) in electronic devices. 

TT-Electron materials, which are defined as those having extended Jt-electron clouds in the solid state, have various peculiar properties such as high electron mobility and chemical/biological activities. We have developed a set of techniques for synthesizing carbonaceous K-electron materials, especially crystalline graphite and carbon nanotubes, at temperatures below 1000°C. We have also revealed new types of physical or chemical interactions between Jt-electron materials and various other materials. The unique interactions found in various Jt-electron materials, especially carbon nanotubes, will lay the foundation for developing novel functional, electronic devices in the next generation. 

One of tlte principal applications of the normal distribution in reliability calculations and liazard and risk analysis is tlte distribution of lime to failure due to wearout. Suppose, for example, tliat a production lot of a certain electronic device is especially designed to withstand liigh temperatures and intense vibrations lias just come off the assembly line. A sample of 25 devices from tlie lot is tested under tlie specified heal and vibration conditions. Time to failure, in hours, is recorded for each of the 25 devices. Application of Eqs. (19.10.1) and... 

The first realization of a conjugated polymer/fullerene diode [89] was achieved only recently after the detection of the ultrafasl phoioinduced electron transfer for an lTO/MEH-PPV/CW)/Au system. The device is shown in Figure 15-18. Figure 15-19 shows the current-voltage characteristics of such a bilayer in the dark at room temperature. The devices discussed in the following section typically had a thickness of 100 nm for the MEH-PPV as well as the fullerene layer. Positive bias is defined as positive voltage applied to the 1TO contact. The exponential current tum-on at 0.5 V in forward bias is clearly observable. The rectification ratio at 2 V is approximately l()4. 

The uncertainty principle is negligible for macroscopic objects. Electronic devices, however, are being manufactured on a smaller and smaller scale, and the properties of nanoparticles, particles with sizes that range from a few to several hundred nanometers, may be different from those of larger particles as a result of quantum mechanical phenomena, (a) Calculate the minimum uncertainty in the speed of an electron confined in a nanoparticle of diameter 200. nm and compare that uncertainty with the uncertainty in speed of an electron confined to a wire of length 1.00 mm. (b) Calculate the minimum uncertainty in the speed of a I.i+ ion confined in a nanoparticle that has a diameter of 200. nm and is composed of a lithium compound through which the lithium ions can move at elevated temperatures (ionic conductor), (c) Which could be measured more accurately in a nanoparticle, the speed of an electron or the speed of a Li+ ion ... 

The effect of viscous dissipation on temperature change along the micro-channel axis is illustrated in Fig. 4.11, where the dependences dT),/ dx on d that correspond to water and isopropanol flows are presented. One can see that under the conditions corresponding to the Judy et al. (2002) experiments = 74.1 pm, L = 114 mm, Ljd = 1,543), the rise of bulk temperature due to viscous dissipation is small enough. So, at d > 100 pm the temperature gradient is dT),/ dx < 1 K/m. In this case, the difference between outlet and inlet temperature is about 0.1 K. Under conditions that are typical for micro-channels of electronic devices L/d r j 102) this difference is about 0.01 K. The rise of temperature due to viscous dissipation is small enough even at water flow in micro-channels with d 20 pm. Thus, for micro-channels with d = 20 pm and L/d = 10, we have Tout — Tin 0.8 K. 

Depending on the particular design of inlet and outlet manifolds, the difference between the flow rates into some parallel micro-channels may be up to 20%. Idealizing the flow rate as uniform can result in significant error in prediction of the temperature distribution of a heated electronic device. 

Hetsroni G, Mosyak A, Segal Z (2001) Nonuniform temperature distribution in electronic devices cooled by flow in parallel micro-channels. IEEE Trans Comp Packag Technol 24(1) 16-23 Ho CM, Tai Y-C (1998) Micro-electronic mechanic systems (MEMS) and fluid flows. Ann Rev Fluid Mech 30 5-33... 

The processes in a cooling system of electronic devices with high power density can be modeled as follows. The coolant with temperature T2.0 and pressure F2.0 enters into the micro-channel from the tank (5) (Fig. 10.2). The mass capacity of the liquid in the tank (5) is large enough, therefore the heat flux from the micro-channel... 

Dixit, G. A., etal., ANovel25 pm via Plug Process using Low Temperature CVD Al/TiN, in Proc. Int. Electron Devices Meeting, 1001(4), lEEENewYorkPublishers (Dec. 1995)... 

The authors developed a multi-layered microreactor system with a methanol reforma- to supply hydrogen for a small proton exchange membrane fiiel cell (PEMFC) to be used as a power source for portable electronic devices [6]. The microreactor consists of four units (a methanol reformer with catalytic combustor, a carbon monoxide remover, and two vaporizers), and was designed using thermal simulations to establish the rppropriate temperature distribution for each reaction, as shown in Fig. 3. 

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