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Surface donor

Electron-hole recombination velocities at semiconductor interfaces vary from 102 cm/sec for Ge3 to 106 cm/sec for GaAs.4 Our first purpose is to explain this variation in chemical terms. In physical terms, the velocities are determined by the surface (or grain boundary) density of trapped electrons and holes and by the cross section of their recombination reaction. The surface density of the carriers depends on the density of surface donor and acceptor states and the (potential dependent) population of these. If the states are outside the band gap of the semiconductor, or are not populated because of their location or because they are inaccessible by either thermal or tunneling processes, they do not contribute to the recombination process. Thus, chemical processes that substantially reduce the number of states within the band gap, or shift these, so that they are less populated or make these inaccessible, reduce recombination velocities. Processes which increase the surface state density or their population or make these states accessible, increase the recombination velocity. [Pg.58]

The subsequent reaction of bromine treated NaX and CsX with benzene revealed two types of behavior (35). At saturation Br2 coverage surface donor complexes were formed on sites III and II, whereas at less than Br2 saturation (only site II occupied) benzene reacted rapidly to form addition products containing carbon-bromine bonds. The unique ability to use Raman spectroscopy in general for obtaining low frequency spectral data in studies of in situ catalytic process was discussed by the authors. [Pg.126]

In the course of catalytic oxidation, the production rate of intermediates that finally generate CO2 and H2O is also limited by rx. Some intermediates are the chemisorbed species that form surface donors and acceptors, and the other intermediates are the excited species. Both the generation rate of carriers originated from the surface states and the production rate of the excited species is governed by rx- Thus the dependence of CTL intensity on flow velocity should agree with that of rx in the diffusion-controlled region. [Pg.120]

It is important to emphasize that spectroscopic evidence shows that water transforms the Lewis acid sites of sulfated zirconia into Bronsted acid sites [80]. At the same time, water promotes isomerization reactions over sulfated zirconia for a moderate extent of catalyst dehydration. Similarities were reported between the effect of rehydration on the isomerization activity of sulfated zirconia [81] and on that of other oxide catalysts [49] that are consistent with the role of surface donor sites in hydrocarbon isomerization reactions. However, when spectroscopic methods using basic probes were used to compare sulfated zirconia and zeolites in terms of the strength of their acid sites, the results were inconsistent with all catalytic data. These findings illustrate the danger of comparing the acidity of catalyst systems that differ in structure and composition, such as zeolites and sulfated zirconia in these systems the "catalytic" and the "physicochemical" scales for the strength of acid-base interaction may contain significantly different parameters. [Pg.92]

Figure III,6a presents a schematic picture of the energy levels of bodies in contact [138, 139]. In addition to the principal energy bands, there are also impurity levels giving the surface donor or acceptor properties. Figure III,6a presents a schematic picture of the energy levels of bodies in contact [138, 139]. In addition to the principal energy bands, there are also impurity levels giving the surface donor or acceptor properties.
Hence, in order to eliminate the electrical component, we must give the surface donor or acceptor properties [141] this may be done by modification of the surface, namely, replacing certain surface molecular groups by others. Possible molecular groups may be placed [142] in a donor—acceptor series ... [Pg.74]

Good, van Oss, and Caudhury [208-210] generalized this approach to include three different surface tension components from Lifshitz-van der Waals (dispersion) and electron-donor/electron-acceptor polar interactions. They have tested this model on several materials to find these surface tension components [29, 138, 211, 212]. These approaches have recently been disputed on thermodynamic grounds [213] and based on experimental measurements [214, 215]. [Pg.376]

Many solids have foreign atoms or molecular groupings on their surfaces that are so tightly held that they do not really enter into adsorption-desorption equilibrium and so can be regarded as part of the surface structure. The partial surface oxidation of carbon blacks has been mentioned as having an important influence on their adsorptive behavior (Section X-3A) depending on conditions, the oxidized surface may be acidic or basic (see Ref. 61), and the surface pattern of the carbon rings may be affected [62]. As one other example, the chemical nature of the acidic sites of silica-alumina catalysts has been a subject of much discussion. The main question has been whether the sites represented Brpnsted (proton donor) or Lewis (electron-acceptor) acids. Hall... [Pg.581]

Still another type of adsorption system is that in which either a proton transfer occurs between the adsorbent site and the adsorbate or a Lewis acid-base type of reaction occurs. An important group of solids having acid sites is that of the various silica-aluminas, widely used as cracking catalysts. The sites center on surface aluminum ions but could be either proton donor (Brpnsted acid) or Lewis acid in type. The type of site can be distinguished by infrared spectroscopy, since an adsorbed base, such as ammonia or pyridine, should be either in the ammonium or pyridinium ion form or in coordinated form. The type of data obtainable is illustrated in Fig. XVIII-20, which shows a portion of the infrared spectrum of pyridine adsorbed on a Mo(IV)-Al203 catalyst. In the presence of some surface water both Lewis and Brpnsted types of adsorbed pyridine are seen, as marked in the figure. Thus the features at 1450 and 1620 cm are attributed to pyridine bound to Lewis acid sites, while those at 1540... [Pg.718]

Figure A3.10.23 Schematic diagram of molecular CO chemisorption on a metal surface. The model is based on a donor-acceptor scheme where the CO 5 a FIOMO donates charge to surface unoccupied states and the surface back-donates charge to the CO 2 71 LUMO [58]. Figure A3.10.23 Schematic diagram of molecular CO chemisorption on a metal surface. The model is based on a donor-acceptor scheme where the CO 5 a FIOMO donates charge to surface unoccupied states and the surface back-donates charge to the CO 2 71 LUMO [58].
A wide class of aiyl-based quaternary surfactants derives from heterocycles such as pyridine and quinoline. The Aralkyl pyridinium halides are easily synthesized from alkyl halides, and the paraquat family, based upon the 4, 4 -bipyridine species, provides many interesting surface active species widely studied in electron donor-acceptor processes. Cationic surfactants are not particularly useful as cleansing agents, but they play a widespread role as charge control (antistatic) agents in detergency and in many coating and thin film related products. [Pg.2577]

A salient feature of natural surfaces is tliat tliey are overwhelmingly electron donors [133]. This is tlie basis for tlie ubiquitous hydrophilic repulsion which ensures tliat a cell can function, since massive protein-protein aggregation and protein-membrane adsorjition is tliereby prevented. In fact, for biomolecule interactions under typical physiological conditions, i.e. aqueous solutions of moderately high ionic strengtli, tlie donor-acceptor energy dominates. [Pg.2839]

In many instances tire adiabatic ET rate expression overestimates tire rate by a considerable amount. In some circumstances simply fonning tire tire activated state geometry in tire encounter complex does not lead to ET. This situation arises when tire donor and acceptor groups are very weakly coupled electronically, and tire reaction is said to be nonadiabatic. As tire geometry of tire system fluctuates, tire species do not move on tire lowest potential energy surface from reactants to products. That is, fluctuations into activated complex geometries can occur millions of times prior to a productive electron transfer event. [Pg.2976]

In light of tire tlieory presented above one can understand tliat tire rate of energy delivery to an acceptor site will be modified tlirough tire influence of nuclear motions on tire mutual orientations and distances between donors and acceptors. One aspect is tire fact tliat ultrafast excitation of tire donor pool can lead to collective motion in tire excited donor wavepacket on tire potential surface of tire excited electronic state. Anotlier type of collective nuclear motion, which can also contribute to such observations, relates to tire low-frequency vibrations of tire matrix stmcture in which tire chromophores are embedded, as for example a protein backbone. In tire latter case tire matrix vibration effectively causes a collective motion of tire chromophores togetlier, witliout direct involvement on tire wavepacket motions of individual cliromophores. For all such reasons, nuclear motions cannot in general be neglected. In tliis connection it is notable tliat observations in protein complexes of low-frequency modes in tlie... [Pg.3027]

Prediction of various physicochemical properties such as solubihty, lipophhicity log P, pfQ, number of H-donor and acceptor atoms, number of rotatable bonds, polar surface area), drug-likeness, lead-likeness, and pharmacokinetic properties (ADMET profile). These properties can be applied as a filter in the prescreening step in virtual screening. [Pg.605]

Transfer occurs by sublimation, condensation, and diffusion (101). Printhead thermal dissipation causes donor dye to travel to the surface of the donor ribbon and convert directiy to a gas. Colorant puffs immediately strike the nearby receptor and soak in, assisted by residual printhead heat. [Pg.51]

In general, in a planar process, — junctions are formed just below the surface of a siUcon wafer by the implantation of donor ions into a type region or acceptor ions into an n-ty e region. Thus, the general concern is with -p or -n junctions. As the initial wafer concentration of acceptors or donors in sihcon increases from 10 to 10 cm increases from about 0.81 to 1.04 V for a p n junction and is about 10 mV higher for an -p... [Pg.349]


See other pages where Surface donor is mentioned: [Pg.147]    [Pg.40]    [Pg.147]    [Pg.98]    [Pg.352]    [Pg.362]    [Pg.49]    [Pg.981]    [Pg.963]    [Pg.716]    [Pg.551]    [Pg.147]    [Pg.40]    [Pg.147]    [Pg.98]    [Pg.352]    [Pg.362]    [Pg.49]    [Pg.981]    [Pg.963]    [Pg.716]    [Pg.551]    [Pg.575]    [Pg.717]    [Pg.951]    [Pg.2885]    [Pg.2948]    [Pg.2999]    [Pg.281]    [Pg.404]    [Pg.143]    [Pg.128]    [Pg.208]    [Pg.10]    [Pg.403]    [Pg.435]    [Pg.236]    [Pg.545]    [Pg.287]    [Pg.161]    [Pg.230]    [Pg.177]    [Pg.371]    [Pg.2222]   
See also in sourсe #XX -- [ Pg.1022 ]

See also in sourсe #XX -- [ Pg.1022 ]




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