Sputtering deposition systems

Once the contaminants were Identified It was possible to trace their source back to sporatlc extinguishing of the plasma In a sputter deposition system. This problem with the sputtering systans had been considered minor by production personnel because the plasma could be restarted. 

RF- or DC-driven planar magnetron discharges are applied for spntter depositiom The pressures in the discharges are usually quite low, in this case 1-10 mTorr. The pressure is hmited in the physical sputter deposition system by the requirement that the sputtered atoms mean free path be larger than the separation between the sputtered target and substrate where the atoms should be deposited. The physical sputter deposition rate can be estimated by assuming that all sputtered material is deposited on the substrate ... 

Figure 12.15 DC-current two-electrode sputter deposition system.

Fig. 1.3. Schematic showing the basic features of a dc sputter deposition system.

Hidden anode reactive sputter deposition system... 

Auxiliary plasma (plasma technology) A plasma established in a processing system to assist in some aspect of the processing separate from the main processing event. Examples Plasma cleaning in a vacuum deposition system plasma activation of the reactive gas near the substrate in a reactive magnetron sputter deposition system. 

The sputter deposition system consists (in a general case) of a vacuum chamber, sputter sources, a substrate holder and a pumping system. The control panel selects the target source and substrate position and controls the sputtering power. The vacuum system contains a mechanical pump, a turbo pump, throttle valve, and chamber. The separate RF power supply is remote. It supplies the RF power needed to generate plasma in the deposition chamber. 

Metallization layers are generally deposited either by CVD or by physical vapor deposition methods such as evaporation (qv) or sputtering. In recent years sputter deposition has become the predominant technique for aluminum metallization. Energetic ions are used to bombard a target such as soHd aluminum to release atoms that subsequentiy condense on the desired substrate surface. The quaUty of the deposited layers depends on the cleanliness and efficiency of the vacuum systems used in the process. The mass deposited per unit area can be calculated using the cosine law of deposition ... 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

The PTFE/Si3N4 multilayers were prepared by Ar+ ion beam alternatively sputtering pure PTFE and Si3N4 ceramic target in a polyfunctional beam assisted deposition system. Si (100) wafer is the substrate. The mutlilayer film has eleven layers with alternatively PTFE and Si3N4 layers, the inmost and... 

Ion Beam Deposition The most commonly used vacuum method for the rapid deposition of films (thin or thick) is sputtering (2M. This can be combined with ion beam techniques in a variety of ways (25) including (Figure 18) ion beam sputter deposition (IBSD) eg of oxide films or of hard carbon (26). In reactive systems the reactive gas is added to the argon ion beam. The properties of the deposited materials are modified substantially by varying the gas composition (Figure 19). 

Warwick, C M, Kieseheke, R.R. and Clyne, T.W. (1991), Sputter deposited barrier coatings on SiC monofilaments for use in reactive metallic matrices - part II. System stress state. Acta Metall. Mater. 39, 437 44. 

The NEB method has been applied successfiilly to a wide range of problems, for example studies of diffusion processes at metal smfaces, multiple atom exchange processes observed in sputter deposition simulations, dissociative adsorption of a molecule on a smface, diffusion of rigid water molecules on an ice Di siuface, contact formation between metal tip and a smface, cross-slip of screw dislocations in a metal (a simulation requiring over 100,000 atoms in the system, and a total of over 2,000,000 atoms in the MEP calculation), g d diffusion processes at and near semiconductor smfaces (using a plane wave based Density Fimctional Theory method to calculate the atomic forces). In the last two applications the calculation was carried out on a cluster of workstations with the force on each image calculated on a separate node. 

The precursor used to create the 3-APTHS solutions was 3-aminopropyl-triethoxysilane (3-APTES). Commercial 3-APTES obtained from Huls Petrarch Systems Inc. was twice vacuum-distilled. Individual ampules were filled with the distilled precursor and sealed for later use. Triply-distilled HPLC grade water was used to prepare the 3-APTHS solutions used for sample treatment. For isotopically labelled 3-APTHS studies, we used 99 atom % 15N labelled 3-APTES, and 97.8 atom % l80 labelled water. Both compounds were obtained from MSD Isotopes [12]. The substrates used were polished Si wafers 1.5 cm in diameter. The Cr was sputter-deposited to a thickness of 1000 A onto one half of the Si wafer so that both the Si and Cr surfaces had identical preparation histories up to and including the analysis for every sample prepared. 

Figure 7. Metal lift-off process using a trilevel-resist scheme, (a and b) The image created in the top-layer resist is transferred via the isolation layer to the bottom planarizing layer by an isotropic etch, (c) The sloped side wall of the planarizing layer has an overhanging transfer layer that breaks up the continuity of the metal film sputter deposited onto the system. (d) Subsequent dissolution of the bottom layer carries off parts of the metal film adhering to the resist layers, and well-defined metal lines are left.

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