Sputtering target

Fig. 7. Bombardment processes at the surface and in the near-surface region of a sputtering target, where represents the energetic particle used for bombarding the surface <), an adsorbed surface species 0> atoms and x, lattice defects.

The analysis of specific elements for which GDMS is particularly well suited compared to other methods (e.g., measurement to ppb levels of S, Se, Te, Pb, Bi, Tl, in high-performance alloys and measurement of U andTh in sputter targets)... 

The surface is bombarded with a stream of inert gas ions of energy, Eo, and the sputtered target secondary ions of energy, E, are monitored, rather than the backscattered primary beam ions. Mass analysis of the secondary ions is carried out. The intensity and the energy are also determined, Each element has a characteristic value of E/ Eq. This allows the elemental analysis of the surface. 

As the source of material (sputtering target) is a solid, a variety of electrode configurations can be used e.g., depositing material downward, upward or sideways. It is possible to electrically bias workpieces being coated. This can encourage a level of ion bombardment that can modify the surface and structure of a coating. 

Fig. 10.1 Sputter target layout used for ternary phase spread deposition in the Hanak approach.

Fig. 11.2. The scheme of the setup for composite film preparation with separate sputtered targets and a multiple hearth electron-beam source (1) substrate holder (2) substrates (3) water-cooled copper crucibles (4) electron-beam guns.

Fig. 5.24. Sheet resistance and film thickness distribution for static deposition DC magnetron sputtering of ZnO Al on glass from sintered ZnO A I2O3 targets using a new or an eroded sputtering target (reprinted from [117])...

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