Planar magnetron

Figure Bl.17.8. Iron oxide particles coated with 4 nm of Pt in an m-planar magnetron sputter coater (Hennann and Mtiller 1991). Micrographs were taken in a Hitachi S-900 in-lens field emission SEM at 30,000 primary magnification and an acceleration voltage of 30 kV. Image width is 2163 nm.

TaN resistive films for hybrid circuits deposited by planar magnetron sputtering. 

Fig. 5.4. (a) Operation principle of a planar magnetron cathode. The secondary electrons emitted from target surface are trapped by the magnetic field due to the Lorentz force. The result is a plasma torus in front of the target, (b) Planar magnetron cathode of 3.75 m length (from [35])... 

Fig. 5.19. Comparison of reactive and ceramic target sputtering processes. The relative target costs are a rough estimate for planar magnetron targets (from [105])...

In contrast to the pseudomorphic relationship proposed in the LEED study, SXRD data [37,63] from the MgO(100)-Fe system indicate that for a 1 ML equivalent film the Fe lattice parameter is approximately 2.89 A, which is close to that of bulk Fe. For the latter study, however, a rather different preparative procedure was employed. Firstly, the MgO substrate was cleaned in solvents ex situ and only heated to 633 K in UHV. Then the sample was maintained at 633 K, whilst Fe was sputtered onto it, using a planar magnetron sputter gun. 

An rf-planar-magnetron GD has also been coupled with TOF-MS. For rapid sample changing without venting the mass spectrometer, a sliding PTFE seal was placed at the interface. The seal in turn holds a Macor ring, shields it from the plasma and supports the sample [601]. Detection limits for conducting and insulating materials were of the order of 0.1 and 10 gg/g for B and Mg in Macor, and Bi, Cr, Mn, Ni, and Pb in aluminum, respectively. The source-spectrometer combination still needs improvements at the interface with respect to the extraction location for analyte ions, the scattered ion noise and the extraction repetition rate. 

Heintz M. J., Broekaert J. A. C. and Hieftje G. M. (1997) Analytical characterization of a planar magnetron radio frequency glow-discharge source, Spectrochim Acta, Part B 52 579-591. 

Magnetic field and electron path in a planar magnetron. 

In the case of a long planar magnetron, there exist two parallel erosion zones of the broadness b and the length 1. At first the rate in the surface plane for one emission zone is calculated according to (92) and finally by superposition completed with the... 

Equation (94) describes the condensation rate of sputtered material from a long planar magnetron cathode at an arbitrary point Xp in the substrate plane. Since, however, such cathodes have two erosion zones of equal size both rate contributions are, under consideration of the parallel displacement of the coordinates, superimposed to the total rate. 

Material efficiency factor of a planar magnetron cathode PK 500 L (LEYBOLD) as function of the geometry of the sputtering assembly [363]. 

The material efficiency s in sputtering is usually better than in evaporation. With a long planar magnetron cathode, e.g. PK 500 L (Leybold), we obtain for the inner cathode area,... 

The processing chamber has a diameter of 44,5 cm and a height of 50 cm, it contains 3 planar magnetrons, quartz lamp substrate heaters and substrate holders. 

RF- or DC-driven planar magnetron discharges are applied for spntter depositiom The pressures in the discharges are usually quite low, in this case 1-10 mTorr. The pressure is hmited in the physical sputter deposition system by the requirement that the sputtered atoms mean free path be larger than the separation between the sputtered target and substrate where the atoms should be deposited. The physical sputter deposition rate can be estimated by assuming that all sputtered material is deposited on the substrate ... 

Fig. 16. Spectra of the light emitted from the disdiarge operated in CF gas when Au and Au/PTFE targets (planar magnetron) were used. Gcdd peaks are marked by arrows...

FIGURE 10.2 Radio-frequency planar magnetron sputtering apparatus used for producing silicon nitride masks during MOS manufacture. 

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