Reactive magnetron sputtering

Fig. 19 —Cross-sectional morphologies of (a) TiN coating with hardness of 26 GPa, and (b) TiN/Si3N4 coating with optimum Si content of 10.8 at. % and hardness of 47.1 GPa deposited by reactive magnetron sputtering.

Fig. 22—Friction coefficients between WC ball and TiN/Si3N4 nanocomposite coatings as function of the Si content. The coatings were deposited by reactive magnetron sputtering. The friction coefficients of the TiN/Si3N4 coatings were obtained under the load of 20 N. In the case of the TiN coating and the Si3N4 coating, the load is 5 N, because the two coatings will fail and peel off from the substrate under the load of 20 N.

Fig. 23—The cutting life of the uncoated drill and the drills deposited with TiN coating and TiN/Si3N4 nanocomposite coatings drilling holes on quenched AISI 420 stainless steel. The coatings were deposited by reactive magnetron sputtering.

Chen, S.Z., Zhang, P.Y., Zhuang, D.M., and Zhu, W.P., Investigation of nitrogen doped TiOz photocatalytic films prepared by reactive magnetron sputtering, Catal. Commun., 5,677, 2004. 

C. May and J. Striimpfel, ITO coating by reactive magnetron sputtering — comparison of properties from DC and MF processing, Thin Solid Films, 351 48-52, 1999. 

L.J. Meng and M.P. dos Santos, Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature, Thin Solid Films, 322 56-62, 1998. 

Asanuma T, Matsutani T, Liu G, Mihara T, Kiuchi M (2004) Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma. J Appl Phys 95 6011-6016... 

Ljungcrantz, H., Engstrom, C., Hultman, L., Olsson, M., Chu, X., Wong, M.S. and Sproul, W.D. (1998), Nanoindentation hardness, abrasive wear, and microstructure of TiN/ NbN polycrystalline nanostructured multilayer films grown by reactive magnetron sputtering , Journal of Vacuum Science and Technology A, 16, 3104-3113. 

MS, magnetron sputtering RMS, reactive magnetron sputtering RF, MF, radio frequency or mid frequency plasma excitation p-DC, pulsed-DC excitation Substrate arranged perpendicular relative to the target (reduced ion bombardment of the film)... 

Fig. 5.7. Stability analysis of a process control loop for the reactive magnetron sputtering of high-index metal oxides. The control of discharge power to stabilize the oxygen partial pressure set point is modeled within the framework of the Berg model. A cycle time of 100 ms and process uncertainties for discharge current and oxygen partial pressure measurements are assumed, (from [71])...

The concept of baffled reactive magnetron sputtering dates back to the early 1980s [10], The basic configuration is shown in Fig. 5.9. A reactive gas baffle is mounted in front of the target. 

The transition mode process control described above is the key to reactive magnetron sputtering of ZnO Al films. Several approaches have proven to be useful, either adjusting the reactive gas flow or the discharge power as a function of appropriate process variables. 

A strong advantage from a process viewpoint is the fact that the Al enrichment for ZnO Al films deposited by reactive magnetron sputtering at... 

Weinberger, B. R. and Garber, R. B. (1995). Titanium-dioxide photocatalysts produced by reactive magnetron sputtering. Appl. Phys. Lett. 66(18), 2409-2411. 

Yamagishi, M., Kuriki, S., Song, P. K. and Shigesato, Y. (2003). Thin film Ti02 photocatalyst deposited by reactive magnetron sputtering. Thin Solid Films 442(1-2), 227-231. 

Zhang, W. J., Li, Y., Zhu, S. L. and Wang, F. H. (2004). Influence of argon flow rate on Ti02 photocatalyst film deposited by dc reactive magnetron sputtering. Surf. Coat. Technol. 182(2-3), 192-198. 

Figure 1. Electron concentration n and electron mobility i measured by Hall effect of ZnO films prepared by reactive magnetron sputtering as a fimction of the oxygen flow rate f(02). SEM micrographs taken on samples in the three regions of low, medium and high f(02). ...

Meng L.-J. and Dos Santos M. P., Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering,/. Vac. Sci. Technol. A18(4)(2000)pp. 1668-1671. 

---