Sputtered ion source

TOF-SIMS can be applied to identify a variety of molecular fragments, originating from various molecular surface contaminations. It also can be used to determine metal trace concentrations at the surface. The use of an additional high current sputter ion source allows the fast erosion of the sample. By continuously probing the surface composition at the actual crater bottom by the analytical primary ion beam, multi element depth profiles in well defined surface areas can be determined. TOF-SIMS has become an indispensable analytical technique in modem microelectronics, in particular for elemental and molecular surface mapping and for multielement shallow depth profiling. 

A potentially more serious problem may be encountered due to isotopic fractionation at the sputter ion source itself. Some... 

The measurements that have been made at Rochester and the experience that has been gathered over the years on the operation of sputter ion sources [38] indicate that an analytical tool of unprecedented sensitivity and accuracy for isotopic ratio determinations can be constructed by coupling SIMS technology with the new accelerator technique. The only difference in principle between the experiments that have been conducted to date and the technique as it would be applied in secondary ion mass spectrometry is that the primary beam of cesium would be focussed to a fine probe of pm dimensions rather than the spot diameters of approximately 1 mm that have been used to date. 

Sputtered ion source via ions by e ionization ne 1015 cm-3 M+ CsM+, M- high < 10-4 Pa double-focusing SFMS, ToF-MS, quadrupole, tandem MS (AMS) surface analysis material and life sciences, geochronol. 

Mass analysis of the negative-ion beam with a resolution sufficient to separate isotopes of heavy elements is needed prior to acceleration. For example, an electrostatic analyzer is used at the University of Toronto to sharpen the energy distribution of ions produced from a caesium sputter ion source. A pre-acceleration of the negative ion beam... 

Pur.ser, K.H. et al.. An attempt to detect stable N ions from a sputter ion source and some implication of the results for the design of tandems for sensitive carbon analysis. Rev. Phys. Appl., 12 (1977) 1487. 

Another possibility is the sputter ion source. Here inside the source gaseous ions are accelerated to the reflector electrode containing an insert made of the element to be vaporized. Due to the sputtering effect, the material evaporates and is converted into ions. This technique is universal and applicable for all elements. Fig. 17 shows a sketch of a sputter source ... 

The intermediate translational energy range of ca. 0.25—20 eV is conveniently covered by sputter-ion sources [202—207]. This technique... 

At beam velocities greater than thermal, velocity selection is not normally used (except for sputter-ion sources) since the methods of supersonic beams, seeded supersonic beams and charge-exchange tend to produce very narrow velocity distributions (see Section 3.2.2). 

By working principle, they can be classified as hot filament sources, ion sources based on Penning discharge (PIG), radio frequency (RF) and microwave (MW) ion sources, electron cyclotron resonance (ECR) ion sources, electron beam ion sources (EBIS, EBIT), laser ion sources, cusp and multicusp ion sources, sputtering ion sources. 

Generation of Mass-Selected Anions. The negatively charged molecules and clusters are generated in a sputtering ion source by bombarding targets of... 

Herman J, Foutch JD, Davico GE (2007) Gas-phase reactivity of selected transition metal cations with CO and CO2 and the formation of metal dications using a sputter ion source. J Phys Chem A 111 2461-2468... 

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