Silver layers spin coating

In a first step, the negative working photoresist SU-8 is spin-coated on to the disk and soft baked [110]. The disk is then UV-exposed to pattern the bottom layer. A silver thin metal layer is thereafter evaporated. The metal layer is spin-coated with an AZ-type photoresist, dried, exposed and developed. In this way, the metal layer can be developed independently from the patterning of the SU-8 layer underneath. The metal layer is patterned by wet-chemical etching. As a next step, a second SU-8 layer is deposited, soft-baked and exposed. Top and bottom layers are now developed. After a hard bake, a second CaF2 disk is attached to the stack and sealed by a light-curing epoxy resin. 

An optical sensing device for surface plasmon resonance (SPR) was proposed for determination of the concentration of phenolic compounds in water. The phenols become adsorbed on a thin gold or silver film that has been spin-coated with a sol-gel layer containing receptor molecules. Best SPR signals for phenolic compounds were obtained when the receptors were viologen-type polymers with polymeric counterions (179). The SPR signal intensity was concentration dependent and had to be calibrated for individual phenolic compounds . ... 

To produce "Ag -Ge02" films, stable Ge02 sols doped with silver ions (Ag Ge=0.12 at.%) were used. Ge02 sols were prepared by water hydrolysis of GeCh (chemically pure). The precipitate formed was washed and peptized by adding concentrated nitric acid down to pH=6 or aqueous ammonia up to pH=9 under ultrasound treatment. Four-layer films were spin-coated layer-by-layer onto quarz substrates heated in air at 150°C for 10 min after coating of each layer, followed by heating in air in a cumulative mode (1 h at each temperature) at 350°C, 500°C, 600°C and 800°C. 

The typical polymer LED structure is shown in Figure 7.3. In order to fit in the quartz finger dewar which is inserted in the microwave cavity (see Section 1.3.1 below), the width of the devices was limited to 4.5 mm. They were all fabricated on ITO-coated glass, which was the positive electrode. The active area of the devices was 7 mm. PPV layers were deposited by spin coating the appropriate precursor and thermally converting it CN-PPV was spin-cast directly from solution [3]. The deposition of the polymers was followed by evaporation of the metal electrode from which electrons were injected into the devices [3,9,25,26,28,29]. In the case of the PPV- and PPE-based devices, that electrode was Al-encapsulated Ca, which yielded a higher device efficiency than an A1 electrode [9,25,26,28,29]. The thickness of the emissive PPV and PPE layers was 600 and 300 nm, respectively. Derivatives of PPE dissolved in toluene were spin-coated onto the ITO substrates, followed by e-beam or thcnnal evaporation of A1 or Ca/Al electrodes in a base chamber pressure of 10 torr. The PPV/CN-PPV diodes used A1 as the electron-injecting electrode [3], The thickness of the PPV layer was 120 nm, and that of the CN-PPV layer was 100-200 nm. Finally, copper wires were bonded to the A1 and no layers with silver paint. 

The nano-antennas where fabricated on top of a 200 nm silicon dioxide layer on a standard silicon wafer. The substrate was spin coated with high resolution positive PMMA 950 K resist and electron beam lithography was used to define the nano-antenna structures. After exposure, the samples where developed in a M1BK 1PA solution with a 1 3 composition. Finally, silver was thermally evaporated and Ufted-off to remove of the unwanted residual metal areas. The total number of nano-antennas created was 6.25 x 10 distributed over an area of 2.13 mm. Although the final array of nano-antennas was laid on top of a dielectric layer of silicon dioxide, the silicon substrate obstructed the transmitted light. In Fig. 1.21, SEM pictures at different magnifications show the obtained results through this process. The two transversal nano-antennas in an L shape form a... 

In order to investigate the referenced inkjet-printed film in an OLED, some inkjetted PEDOT-PSS films were used as the anode. On top of the inkjet-printed anode, the hole transport layer (HTL) solution (TPD, [M, M, -bis(3-methylphenyl)-N JV dimethyl benzidine] 67.6 wt.%, polycarbonate (PC) 29.0 wt.%, rubrene 3.4 wt.%, 10.35 mg/ml chloroform) was spin-coated at 1000 rpm for 1 min in a class 100 cleanroom. A 60 nm layer of tris-(8-hydroxyquinoline)-aluminum (Alq3) was then thermally deposited under the high vacuum at the rate of 0.7 A/s. Then, a 300 nm layer of Mg Ag (magnesium -silver) was thermally coevaporated at the ratio of 10 1 on the top of electron transport layer (ETL) layer (Figure 3.10). The thickness of spin-coated layers was matched to one of the inkjet-printed layers (L = 0). Additionally, Figure 3.10 shows results of OLED characteristics with the same layer configuration except that ITO is used as the anode layer. 

To obtain a pre-formatted master, a polymer photoresist is spin-coated onto a glass disc, and is rotated with high precision under an argon-ion laser that is modulated with the information. The resist is then developed and coated with a thin layer of silver, and a nickel master is grown by electroplating. When the master is split away from the polymer, it contains a perfect replica of the pre-format information. 

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