Silicon photoluminescent

P. M. Fauchet, Porous Silicon Photoluminescence and Electroluminescent Devices C. Delerue, G. Allan, and M. Lannoo, Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites L. Bros, Silicon Polymers and Nanocrystals... 

Keywords Nanostructured silicon Photoluminescence Electro-conductivity Immune biosensors T2 mycotoxin... 

Fauchet PM (1998) Porous silicon photoluminescence and electroluminescent devices. In Semiconductors and semimetals, vol 49. Academic, San Diego, pp 206-252... 

An influence of a weak magnetic field on the evolution of porous silicon surface species during ageing in air and porous silicon photoluminescence is studied. Magnetic field retards the process of Si surface oxidation and stimulates a breakage of Si-H bonds at the porous silicon surface. It also affects bond energy in silicon complexes witti water molecules. 

Y. Xiao, M. J. Heben, J. M. McCullough, Y. S. Tsuo, J. I. Pankove, and S. K. Deb, Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment, Appl. Phys. Lett. 62(10), 1152, 1993. 

Balaguer, M. and Matveeva. E. Quenching of porous silicon photoluminescence by molecular oxygen and dependence of this phenomenon on storing media and method of preparation of pSi photosensitizer , (2010) J. Nanopart. Res. 12, 2907-17. 

Koropecki RR, Arce RD, Schmidt JA (2004b) Infrared studies combined with hydrogen effusion experiments on nanostructured porous silicon. J Non Cryst Solids 338-340(1) 159-162 Koropecki RR, Arce RD, Gennaro AM, Spies C, Schmidt JA (2006) Kinetics of the photoinduced evolution of the nanostructured porous silicon photoluminescence. J Non Cryst Solids 352(9-20) 1163-1166... 

Low SP, Williams KA, Canham LT, Voelcker NH (2006) Evaluation of mammalian cell adhesion on surface-modified porous silicon. Biomaterials 27 4538 Makara VA, Klyui NI, Rozhin AG, Litovchenko VG, Piryatinskii YP, Kometa OB (2003) Porous silicon photoluminescence modification by surface treatments and impregnation of carbon based nanoclusters. Phys Status Solidi A-Appl Res 197 355 Makila E, Bimbo LM, Kaasalainen M, Herranz B, Airaksinen AJ, Heinonen M, Kukk E, Hirvonen J, Santos HA, Salonen J (2012) Amine modification of thermally carbonized porous silicon with silane coupling. Langmuir 28 14045... 

The mechanical properties of mesoporous silicon have so far received nothing hke the intense scrutiny that its structural, luminescent, thermal, and optical properties have (see, e.g., the handbook chapters Microscopy of Porous Silicon, Photoluminescence of Porous Silicon, Thermal... 

Butturi MA, Carotta MC, Martinellia G, Passaria L, Youssef GM, Chiorino A, Ghiotti G (1997) Effects of ageing on porous silicon photoluminescence correlation with FTIR and UV-vis spectra. Solid State Commun 101 11... 

Robinson MB, Dillon AC, Haynes DR, George SM (1992) Effect of thermal annealing and surface coverage on porous silicon photoluminescence. Appl Phys Lett 61 1414-1416... 

Torchinskaya TV, Korsunskaya NE, Khomenkova LY, Dhumaev BR, Prokes SM (2001) The role of oxidation on porous silicon photoluminescence and its excitation. Thin Solid Films 381 88-93 Unagami T (1980) Oxidation of porous silicon and properties of its oxide film. Jpn J Appl Phys 19 231-241 Xu ZY, Gal M, Gross M (1992) Photoluminescence studies on porous silicon. Appl Phys Lett 60 1375-1377 Yon JJ, Barla K, Herino R, Bomchil G (1987) The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates. J Appl Phys 62 1042-1048... 

Mahmoudi BE, Gabouze N, Guerbous L, Haddadi M, Beldjilali K (2007b) Long-time stabilization of porous silicon photoluminescence by surface modification. J Lumin 127 534-540 McLellan RB (1997) The kinetic and thermodynamic effects of vacancy interstitial interactions in Pd-H solutions. Acta Mater 45 1995-2000... 

Hydrogenated amorphous silicon was formed by plasma decomposition of monosilane gas. The network has the dimension of close to 3. Polysilane alloy was formed by plasma decomposition of disilane gas.33 The network consists of a mixture of 1-dimensional polysilane and 3-dimensional silicon micro clusters.34 The effective network dimension is lower than that of amorphous silicon. Photoluminescence observations for various silicon-based materials are shown in Figure 14. The peak energy values of the photoluminescence spectra for amorphous silicon, polysilane alloy, hexyl-silicon network polymer and dihexylpolysilane are 0.8, 1.2, 2.8 and 3.3 eV, respectively. This result confrrms that a wide continuous spectra range from ultraviolet to infrared can be covered by the luminescence spectra of silicon based polymers. 

Interestingly, it has been argued that nanoparticulate formation might be considered as a possibility for obtaining new silicon films [379]. The nanoparticles can be crystalline, and this fact prompted a new line of research [380-383], If the particles that are suspended in the plasma are irradiated with, e.g., an Ar laser (488 nm), photoluminescence is observed when they are crystalline [384]. The broad spectrum shifts to the red, due to quantum confinement. Quantum confinement enhances the bandgap of material when the size of the material becomes smaller than the radius of the Bohr exciton [385, 386]. The broad PL spectrum shows that a size distribution of nanocrystals exists, with sizes lower than 10 nm. 

The introduction of electronic deep levels is demonstrated in Fig. 9 with low-temperature photoluminescence spectra for n-type (P doped, 8 Cl cm) silicon before (control) and after hydrogenation (Johnson et al., 1987a). The spectrum for the control sample is dominated by luminescence peaks that arise from the well-documented annihilation of donor-bound excitons (Dean et al., 1967). After hydrogenation with a remote hydrogen plasma, the spectrum contains several new transitions with the most prominent peaks at approximately 0.95, 0.98, and 1.03 eV. These transitions identify... 

As for silicon, secondary ion mass spectrometry (SIMS) is the most widely used profiling analysis technique for deuterium diffusion studies in III-V compounds. Deuterium advantageously replaces hydrogen for lowering the detection limit. The investigations of donor and acceptor neutralization effects have been usually performed through electrical measurements, low temperature photoluminescence, photothermal ionization spectroscopy (PTIS) and infrared absorption spectroscopy. These spectroscopic investigations will be treated in a separated part of this chapter. 

Warner JH, Hoshino A (2005) Water-soluble photoluminescent silicon quantum dots. Angew Chem Int Ed 44 4550 1554... 

NHE OCP ONO OPS PCD PDS PL PLE PMMA PP PP PS PSG PSL PTFE PVC PVDF normal hydrogen electrode (= SHE) open circuit potential oxide-nitride-oxide dielectric oxidized porous silicon photoconductive decay photothermal displacement spectroscopy photoluminescence photoluminescence excitation spectroscopy polymethyl methacrylate passivation potential polypropylene porous silicon phosphosilicate glass porous silicon layer polytetrafluoroethylene polyvinyl chloride polyvinylidene fluoride... 

By controlling the structural and electronic properties of sNPS which are related to the nanocrystallite dimensions and porosity, their surface selectivity and sensitivity to different gases (nitrogen and carbon oxide, vapors of water and organic substances) can be adjusted. This approach for the effective detection of acetone, methanol and water vapor in air was described in [13-15].The minimal detectable acetone concentration was reported to be 12 pg/mL. Silicon sensors for detection of SO2 and some medicines such as penicillin were created [16-18]. sNPS were used for the development of a number of immune biosensors, particularly using the photoluminescence detection. Earlier we developed similar immune biosensors for the control of the myoglobin level in blood and for monitoring of bacterial proteins in air [19-23]. 

The developed prototype includes a source of ultraviolet (UV) radiation (1) with the wavelength of 350 nm, two photodiodes (2 and 3) based on a silicon monocrystal and placed at the angle of 20-25° relative to the plate with sNPS layer (4) and a photodiode (5) for detection of the incident UV light (Fig. 9.6). Upon adsorption of biomolecules the level of the sNPS photoluminescence and the output of the voltage of the consecutively connected photo detectors decrease. Use of two photodetectors of photoluminescence increases the biosensor sensitivity. 

Starodub NF, Starodub VM (2004) Biosensors based on the photoluminescence of porous silicon overall characteristics and apphcation for the medical diagnostics. Sensors Electronics and Microsystem Technol 2 63-83... 

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