Photoluminescence porous silicon

J. M. Perez, J. Villalobos, P. McNeill, J. Prasad, R. Cheek, J. Kelber, J. P. Estrera, P. D. Stevens, and R. Glosser, Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon, App/. Phys. Lett. 61(5), 563, 1992. 

P. Gorostiza, R. Diaz, M. A. Kulandainathan, F. Sanz, and J. R. Morante, Simultaneous platinum deposition and formation of a photoluminescent porous silicon layer, J. Electroanal. Chem. 469, 48, 1999. 

Fig. 16.4. Photoluminescent porous silicon patterned with chemically bound dodecenyl groups. Illumination of the substrate with UV light (365 nm) induces orange photoluminescence from the unfunctionalized (hydride-...

Platinum ions reduce to metallic Pt by injecting holes into the Si valence band. Thus Pt ions act as an oxidizing agent for silicon, and result in the simultaneous formation of photoluminescent porous silicon under certain conditions. Nickel ions may exchange charge with both the conduction and the valence band. The reduction of Ni ions competes with hydrogen evolution, and the deposition of Ni can only be achieved at high pH where it is kinetically faster. The role of silicon surface states as reaction intermediates is discussed. 

Development of an Enzyme-Based Photoluminescent Porous Silicon Detector for Chemical Warfare Agents, Chapter 3... 

Diener J, Ben-Chorin M, Kovalev DI, Ganichev SD, Koch F (1995) Light from porous silicon by multiphoton vibronic excitation. Phys Rev B 52(12) R8617-R8620 Dimova-Malinovska D, Sendova-Vassileva M, Marinova TS, Krastev V, Kamenova M, Tzenov N (1995) Correlation between the photoluminescence porous silicon and chemical bonding in porous silicon. Thin Solid Films 255 191-195... 

Harper J, Sailor M (1996) Detection of nitric oxide and nitrogen dioxide with photoluminescent porous silicon. Anal Chem 68 3713... 

Photoluminescent porous silicon nanoparticles have many potential medical uses if their properties can be optimized. The techniques for both fabricating such particles and their surface chemistry manipulation are reviewed, including recent approaches whereby such nanoparticles are embedded in other biomaterial matrices. 

Gole JL, Lewis S, Lee S (2007) Nanostructures and porous silicon activity at interfaces in sensors and photocatalytic reactors. Phys Stat Sol (a) 204 1417-1422 Harper J, Sailor MJ (1996) Detection of nitric oxide and nitrogen dioxide with photoluminescent porous silicon. Anal Chem 68 3713-3717... 

The refractive index and thickness, as well as the optical constants of the photoluminescent porous silicon, were determined by measuring the dependence on the angle of incidence of the reflected light intensity measured for three wavelengths of the visible spectral region (Makara et al. 1999). The relative thickness of the porous silicon layer, dido = 1.33, on the degree of oxidation of the silicon base layer is due to the 98 % oxidation of the silicon base layer in columnar... 

NHE OCP ONO OPS PCD PDS PL PLE PMMA PP PP PS PSG PSL PTFE PVC PVDF normal hydrogen electrode (= SHE) open circuit potential oxide-nitride-oxide dielectric oxidized porous silicon photoconductive decay photothermal displacement spectroscopy photoluminescence photoluminescence excitation spectroscopy polymethyl methacrylate passivation potential polypropylene porous silicon phosphosilicate glass porous silicon layer polytetrafluoroethylene polyvinyl chloride polyvinylidene fluoride... 

P. M. Fauchet, Porous Silicon Photoluminescence and Electroluminescent Devices C. Delerue, G. Allan, and M. Lannoo, Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites L. Bros, Silicon Polymers and Nanocrystals... 

Starodub NF, Starodub VM (2004) Biosensors based on the photoluminescence of porous silicon overall characteristics and apphcation for the medical diagnostics. Sensors Electronics and Microsystem Technol 2 63-83... 

Fauchet PM (1998) Porous silicon photoluminescence and electroluminescent devices. In Semiconductors and semimetals, vol 49. Academic, San Diego, pp 206-252... 

Starodub NF, Fedorenko LL, Starodub VM et al (1996) Extinguishing of visible photoluminescence of porous silicon - stimulated by antigen-antibody immunocomplecx formation. In Optical organic and semiconductor inorganic materials, Riga, Latvia, pp 73-76, 26-29 Aug 1996... 

Starodub VM, Fedorenko LL, Sisetskiy AP, Starodub NF (1999) Control of myoglobin level in an immune sensor based on the photoluminescence of porous silicon. Sensors and Actuator B58 409-414... 

A spatial distribution of Pb centres (g = 2.0029, g — 2.0086) has been revealed in porous silicon formed by anodic etching of crystalline silicon in hydrofluoric acid.144 Oxygen ions were also implanted using accelerator at 2 MeV and compared with photoluminescence. 

Octasilacubanes were used as a model in an attempt to understand the optical properties of porous silicon because both porous silicon and octasilacubane show a broad photoluminescence spectra and large Stokes shifts52. 16 for example, shows an absorption edge at ca 3.2 eV and a broad photoluminescence spectrum with a peak at 2.50 eV. 

Non-Debye dielectric relaxation was also observed in porous silicon (PS) [25,160,161], PS has attracted much attention recently, mainly due to its interesting optical and electro-optical properties that can be utilized for device applications [164,165], So far, most of the activity in this field has focused on the intense visible photoluminescence (PL) from nano-PS and the underlying physical mechanism that is responsible for the generation of light. In addition, transport and dielectric relaxation phenomena in PS have also attracted... 

The formation of porous layers in silicon by chemical etching in HF/HNO3 solutions was first reported at about the same time as electrochemical etching [101-104]. These so-called stain etch films are characterized by rough or porous surfaces, typically < 500 A in thickness. Recent work has shown that these stain etch films exhibit strong visible photoluminescence, similar to the emission observed from electrochemically etched porous silicon layers. 

MAGNETIC-FIELD-INDUCED MODIFICATION OF POROUS SILICON SURFACE AND PHOTOLUMINESCENCE... 

An influence of a weak magnetic field on the evolution of porous silicon surface species during ageing in air and porous silicon photoluminescence is studied. Magnetic field retards the process of Si surface oxidation and stimulates a breakage of Si-H bonds at the porous silicon surface. It also affects bond energy in silicon complexes witti water molecules. 

Cubic Si-skeleton clusters were used to model the optical properties of porous silicon (40). In the octasilacubane 15, the absorption edge is observed at approxiamtely 3.2 eV, and a broad photoluminescence spectrum is also observed with a peak of 2.50 eV. Both porous silicon and octasilacubane show broad photoluminescence spectra and large Stokes shifts. 

R. P. Chin, Y. R. Shen, and V. Petrova-Koch, Photoluminescence from porous silicon by infrared multiphoton excitation. Science 270, 776, 1995. 

Y. Suda, T. Koizumi, K. Obata, Y. Tezuka, S. Shin, and N. Koshida, Surface electronic structure and photoluminescence mechanism of porous silicon, J. Electrochem. Soc. 143, 2502, 1996. 

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