Photothermal ionization spectroscopy

The direct proof that H is present in certain centers in Ge came from the substitution of D for H, resulting in an isotopic energy shift in the optical transition lines. The main technique for unraveling the nature of these defects, which are so few in number, is high-resolution photothermal ionization spectroscopy, where IR photons from an FTIR spectrometer excite carriers from the ls-like ground state to bound excited states. Phonons are used to complete the transitions from the excited states to the nearest band edge. The transitions are then detected as a photocurrent. 

As for silicon, secondary ion mass spectrometry (SIMS) is the most widely used profiling analysis technique for deuterium diffusion studies in III-V compounds. Deuterium advantageously replaces hydrogen for lowering the detection limit. The investigations of donor and acceptor neutralization effects have been usually performed through electrical measurements, low temperature photoluminescence, photothermal ionization spectroscopy (PTIS) and infrared absorption spectroscopy. These spectroscopic investigations will be treated in a separated part of this chapter. 

Photothermal Spectroscopy Methods for Chemical Analysis. By Stephen E. Bialkowski Element Speclatlon in Bioinorganic Chemistry. Edited by Sergio Caroli Laser-Enhanced Ionization Spectrometry. Edited by John C. Travis and Gregory C. Turk Fluorescence Imaging Spectroscopy and Microscopy. Edited by Xue Feng Wang and Brian Herman... 

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