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Silicon sensors

Welter O, Bayer T and Greschner J 1991 Micromachined silicon sensors for scanning force microscopy J. Vac. Sc/. Technol. B 9 1353... [Pg.1723]

The micro-machined silicon sensor is fabricated in three basic types of pressure sensors. The three types which are shown in Figure 6.10, are ... [Pg.241]

The first silicon sensors were introduced in the fifties and sixties. They developed into semiconductor microsensors and in the past decade even to microsystems. [Pg.16]

Cheap, very sensitive pressure sensors will be used to monitor the behavior of ventilation systems. These will be based on silicon sensors with built-in signal conditioning. [Pg.222]

In the course of the last twenty years, using techniques borrowed from standard silicon technology, silicon sensors became fundamental for the measurement of most physical and chemical parameters. Figure 1 shows the physical domains and the parameters for which silicon sensors have been introduced. [Pg.70]

Diffused silicon sensor, 20 655 Diffusely reflected light, measuring, 24 111... [Pg.268]

V. Demarne and A. Grisel. An integrated low-power thin-film CO gas sensor on silicon . Sensors and Actuators 13 (1988), 301-313. [Pg.115]

A. Pike and J.W. Gardner. Thermal modeUmg and characterisation of micropower chemoresistive silicon sensors . Sensors and Actuators B45 (1997), 19-26. [Pg.118]

V. Lysenko, S. Perichon, B. Remaki, and D. Barbier. Thermal isolation in microsystems with porous silicon Sensors and Actuators A99 (2002), 13-24. [Pg.119]

By controlling the structural and electronic properties of sNPS which are related to the nanocrystallite dimensions and porosity, their surface selectivity and sensitivity to different gases (nitrogen and carbon oxide, vapors of water and organic substances) can be adjusted. This approach for the effective detection of acetone, methanol and water vapor in air was described in [13-15].The minimal detectable acetone concentration was reported to be 12 pg/mL. Silicon sensors for detection of SO2 and some medicines such as penicillin were created [16-18]. sNPS were used for the development of a number of immune biosensors, particularly using the photoluminescence detection. Earlier we developed similar immune biosensors for the control of the myoglobin level in blood and for monitoring of bacterial proteins in air [19-23]. [Pg.89]

Starodub VM, Fedorenko LL, Sisetskiy AP, Starodub NF (1999) Control of myoglobin level in an immune sensor based on the photoluminescence of porous silicon. Sensors and Actuator B58 409-414... [Pg.97]

The combination of light-transmitting optical cable and miniature silicon sensors has resulted in the development of a new measurement technology for various industrial processes. Three variables may be measured with tins technique—temperature, pressure, and refractive index. The new systems are immune to electromagnetic and radio-frequency interference, they provide more accuracy in electrically noisy environments, and their miniature size improves response and causes minimal process disturbances. [Pg.1160]

G.B. Sigal, D.G. Hafeman, J.W. Parce and H.M. Mcconnell, Electrical-properties of phospholipid-bilayer membranes measured with a light addressable potentiometric sensor, ACS Symp. Ser., 403 (1989) 46-64. J.D. Olson, P.R. Panfili, R. Armenta, M.B. Femmel, H. Merrick, J. Gumperz, M. Goltz and R.F. Zuk, A silicon sensor-based filtration immunoassay using biotin-mediated capture, J. Immunol. Methods, 134(1) (1990) 71-79. [Pg.119]

T. Yoshinobu, M.J. Schoning, F. Finger, W. Moritz and H. Iwasaki, Fabrication of thin-film LAPS with amorphous silicon, Sensors, 4 (2004) 163-169. [Pg.120]

O. H. Elibol, D. Morisette, D. Akin, J. P. Denton, and R. Bashir, Integrated nanoscale silicon sensors using top-down fabrication , Applied Physics Letters 83, 4613 (2003). [Pg.419]

E. Herr and H. Baltes, KOH etching of high-index crystal planes in silicon, Sensors Actuators 31, 283, 1992... [Pg.491]

Fig. 16.13. Photodiode voltage differences induced by response of porous silicon sensors (unfunctionalized, hydride-terminated and methyl-terminated surfaces) to pure dinitrogen (1) and 2.4% methyl ethyl ketone (MEK) in dinitrogen (2). Sensor response is indicated by a sudden increase in the potential difference. Exposure to the organic analyte induces an obvious, reversible change in potential. The... Fig. 16.13. Photodiode voltage differences induced by response of porous silicon sensors (unfunctionalized, hydride-terminated and methyl-terminated surfaces) to pure dinitrogen (1) and 2.4% methyl ethyl ketone (MEK) in dinitrogen (2). Sensor response is indicated by a sudden increase in the potential difference. Exposure to the organic analyte induces an obvious, reversible change in potential. The...
A potential concern with label-free sensors such as those we have been describing is that (paradoxically) the detection is an inferred process, that is, if one observes a shift in a spectrum, does that really correspond to the capture of a biomolecule, and if so, does the amount of the shift correspond with what one expects based on theory DeLouise and Miller set out to test that question in the context of mesopor-ous silicon sensors in a series of papers focused on correlating the optical response to loading of the enzyme GST, a parameter that could be measured independently... [Pg.15]

R.F. Wolffenbuttel Silicon Sensors and Circuits On-Chip Compatibility, Sensor Physics and Technology Series, Chapman k. Hall, London (1995). [Pg.171]

Middelhoek, S., Audet, S.A., Silicon Sensors, Academic Press, London, UK, 1989. [Pg.38]

The first example is a technology originally patented by S. Suzuki et al., Hitachi Ltd., Japan [49]. Their solution for absolute pressure sensors, as well as for relative pressure sensors, is shown in a cross-sectional view in Figure 5.1.15. The piezoresistive silicon sensor element is anodically bonded to a thick glass part that constitutes the vacuum reference volume in the absolute pressure sensor or that contains a hole as a pressure inlet port for the relative pressure sensor. The pressure sensor die is typically housed in a cavity package with pressure inlet ports as part of the body. The surface of the sensor element is usually protected with a gel or other flexible material for corrosion resistance. [Pg.87]

Fig. 5.1.15 Anodic-bonded silicon sensor with sensor for absolute pressure (left) and relative pressure (right) on the same chip... Fig. 5.1.15 Anodic-bonded silicon sensor with sensor for absolute pressure (left) and relative pressure (right) on the same chip...
J. Bryzek et al., Silicon Sensors and Microstructures, Novasensor, Fremont, CA,... [Pg.92]

M. Brischwein, E.R. Motrescu, E. Cabala, A.M. Otto, H. Grothe and B. Wolf, Fimctional cellular assays with multipaiametric silicon sensor chips, Lab on a Chip, 3, 234-240 (2003). [Pg.422]

The double-sandwich ILA utilizes the purified anti-HCP antibodies separately labelled with fluorescein and biotin (Fig. 6) (Briggs et al, 1990). The first stage of the assay consists in the formation of a tripartite complex between HCPs and the two labelled antibodies. After addition of streptavidin, these immune complexes are then captured on a biotinylated nitrocellulose membrane. Detection stage starts with incubation of the membrane with an anti-fluorescein-urease conjugate. The urease hydrolyses added urea into ammonia that alters the pH of the solution and consequently changes the surface potential on the membrane, which is then measured by a silicon sensor. The general detection range reported by Molecular Devices for HCP ILA assays is 2-160 ng/ml for E. coli HCPs and 2.5-200 ng/ml for Chinese Hamster Ovaiy cells HCPs. [Pg.258]

Kittisland G, Stemme G., and Norden B., A submicro particle filter in silicon. Sensors and Actuators,... [Pg.1249]

Baratto, C.,Faglia, G, Sberveglieri, G,Gaburro,Z.,Pancheri,L.,Oton, C. and Pavesi, L. Multiparametric porous silicon sensors , (2002) Sensors, 2,121-6. [Pg.426]


See other pages where Silicon sensors is mentioned: [Pg.62]    [Pg.16]    [Pg.1479]    [Pg.121]    [Pg.427]    [Pg.53]    [Pg.472]    [Pg.475]    [Pg.491]    [Pg.532]    [Pg.532]    [Pg.537]    [Pg.451]    [Pg.6]    [Pg.82]    [Pg.51]    [Pg.356]    [Pg.348]    [Pg.355]    [Pg.426]   
See also in sourсe #XX -- [ Pg.532 , Pg.533 , Pg.534 , Pg.535 , Pg.536 , Pg.537 , Pg.538 ]




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