Silicon dioxide lines

As an example of the use of AES to obtain chemical, as well as elemental, information, the depth profiling of a nitrided silicon dioxide layer on a silicon substrate is shown in Figure 6. Using the linearized secondary electron cascade background subtraction technique and peak fitting of chemical line shape standards, the chemistry in the depth profile of the nitrided silicon dioxide layer was determined and is shown in Figure 6. This profile includes information on the percentage of the Si atoms that are bound in each of the chemistries present as a function of the depth in the film. 

A simplified example will illustrate the process of microstructure fabrication. With reference to Fig. 1, an //-type region has been created by diffusion of a donor impurity into a surface of p-type silicon, forming a p — n junction diode. There is a metal contact to the /(-region, and the contact line is insulated from the p-type surface by a layer of silicon dioxide. The diameter of the diode is on the order of 10 micrometers. 

Fig. 4. Silicon dioxide growth rate using a (100) silicon substrate where the solid lines represent a dry oxygen and the dashed lines a steam atmosphere.

Figure 1. a. Illustration of the dipole layer formed at the palladium Silicon dioxide interface as a result of H interactions b. Schematic capacitance versus applied volt- age, (C-V), and parallel conductance at frequency 6 versus applied voltage, (G- V), for an n-type silicon based Pd MOSCAP in the presence of oxygen (solid line) and hydrogen (dashed line). 

Independent of this dispute concerning the crystalline state, the existence of amorphous SiO in the solid state may also be possible. Electron diffraction investigations show specific lines in some preparations. Emons found that only the dark brown product shows these lines. The yellow product shows only the lines of silicon and silicon dioxide. These observations suggest the possibility of the existence of a solid, probably amorphous SiO. 

In order to improve the separating performance of HPTLC pre-coated plates silica gel 60 even at larger applied volumes, as may be necessary at low sample concentrations, and with a rapid and simple technique of application, HPTLC pre-coated plates silica gel 60 with so-called "concentrating zones" were developed (10, 11, 12). This type of plate consists of two distinct layer sections, namely the separating layer proper consisting of silica gel 60 and a concentrating zone composed of an inert, porous silicon dioxide. These two sorbent materials pass into one another at a clearly defined boundary-line in such a way that the eluant is offered no resistance as it passes through. 

On patterned copper wafers, after CMP, the surfaces are covered mainly by dielectric and copper features. The large scratches on the dielectric such as TEOS oxide will have similar shatter mark characteristics as described in Section 17.2. The scratches on the copper lines or features, however, have a very different signature. As the copper is a soft material with large plastic deformation area, it is very easy to scratch copper (Fig. 17.41). The scratches on copper usually show well-defined continuous lines. A copper scratch can be very shallow and very narrow (Fig. 17.42). It is worthwhile to point out that the extent of damage by scratch is also a function of the underlying dielectric. As a low-fe dielectric is usually much more fragile than silicon dioxide, the damage on copper lines with low-fc dielectric may be more severe (Fig. 17.43). 

Figure VII-8 Normalized emission spectra taken from a 150 nm thick film of BuEH-PPV on silicon dioxide pumped at intensities of 0.34 kW/cm (dotted line), 0.61 kW/cm (dashed line) and 5.2 kW/cm (solid line). The dimensions of the pump stripe were 200 pm by 2 mm and light was collected from the end of the stripe. (Taken from ref. 306)...

Natural silicon-based fillers are divided into hydrated silicas and silicon dioxide (silicas) on the one hand, and silicates, on the other. There is no sharp dividing line between these two groups, since the former do not always occur in a pure form and may contain silicates together... 

Metal-RIE process was/is used in the fabrication of Al inter-coimects on chips." This process is depicted in four steps in Fig. 2. The first step in the metal-RIE process is sputter deposition of a blanket thin film of Al (or Al alloys, such as Al-Cu, Al-Si) over a planerized dielectric (e.g., silicon dioxide). In the next step, the unwanted metal is etched away by reactive ion etching (RIE) through a photoresist mask. The features produced this way are separated, electrically isolated, metal Al conductor lines. In the RIE process chemicaly active ions such as F or Cl bombard the Al surface and form volatile aluminum fluorides or chlorides, which are then pumped away in the vacuum system. After etcliing, a dielectric is deposited in such a fashion that it fills the gaps between the lines as well as above them. In the last step, the dielectric is planarized using the chemical mechanical polishing (CMP) technique. ... 

External sensitivity standards Line profile standards Intensity Respirable Quartz Broadening calibration a- and p-Silicon nitride CSRM 656 Oxides of Al, Ce, Cr, Ti and Zn CSRM 674a a-Silicon dioxide CSRM 1878a Cristobalite CSRM 1879a Al203 CSRM 1976 LaBe CSRM 660 ... 

Figure 30. Broad overview of oxygen diffusion data in crystalline and amorphous silicon dioxide as well as silicate glasses and liquids over a wide temperature range, redrawn from Lamkin et al. (1992). Note how permeation rates, denoted by heavy lines and D02, ate faster than diffusion rates involving interaction with network oxygen, D o, in any given type of medium.

Figure 3 Highly resolved Si KLL Auger transitions of silicon dioxide (dashed line), silicon nitride (solid line), and zero-valent silicon (dotted line). (Reproduced with permission from ULVAC-PHI.)...

---