Semiconductor sulfides

Indeed, the dark reduction by residual free sulfide anions used for the synthesis of semiconductor sulfide nanoparticles interferes strongly in the quantitative study of transmembrane electron transfer in the systems under consideration. Nevertheless, it is possible to formulate some approaches to eliminating the masking influence of residual sulfides, which will be an important part of future studies on new types of promising lipophilic electron carriers like HPA anions. 

Among the most extensively studied quantum dots are semiconductor sulfide nanoparticles, with a tremendous amount of experimental and theoretical results being reported in the literature (264-271). These systems were used by Sun and coworkers in the development of the RESOLV method for nanoscale materials. 

Heterogeneous Photocatalysis. Heterogeneous photocatalysis is a technology based on the irradiation of a semiconductor (SC) photocatalyst, for example, titanium dioxide [13463-67-7] Ti02, zinc oxide [1314-13-2] ZnO, or cadmium sulfide [1306-23-6] CdS. Semiconductor materials have electrical conductivity properties between those of metals and insulators, and have narrow energy gaps (band gap) between the filled valence band and the conduction band (see Electronic materials Semiconductors). 

Four different types of junctions can be used to separate the charge carriers in solar cebs (/) a homojunction joins semiconductor materials of the same substance, eg, the homojunction of a p—n sibcon solar ceb separates two oppositely doped layers of sibcon 2) a heterojunction is formed between two dissimbar semiconductor substances, eg, copper sulfide, Cu S, and cadmium sulfide, CdS, in Cu S—CdS solar cebs (J) a Schottky junction is formed when a metal and semiconductor material are joined and (4) in a metal—insulator—semiconductor junction (MIS), a thin insulator layer, generaby less than 0.003-p.m thick, is sandwiched between a metal and semiconductor material. 

Bina Selenides. Most biaary selenides are formed by beating selenium ia the presence of the element, reduction of selenites or selenates with carbon or hydrogen, and double decomposition of heavy-metal salts ia aqueous solution or suspension with a soluble selenide salt, eg, Na2Se or (NH 2S [66455-76-3]. Atmospheric oxygen oxidizes the selenides more rapidly than the corresponding sulfides and more slowly than the teUurides. Selenides of the alkah, alkaline-earth metals, and lanthanum elements are water soluble and readily hydrolyzed. Heavy-metal selenides are iasoluble ia water. Polyselenides form when selenium reacts with alkah metals dissolved ia hquid ammonia. Metal (M) hydrogen selenides of the M HSe type are known. Some heavy-metal selenides show important and useful electric, photoelectric, photo-optical, and semiconductor properties. Ferroselenium and nickel selenide are made by sintering a mixture of selenium and metal powder. 

Tellurium Sulfide. In the hquid state, teUurium is completely miscible with sulfur. The Te—S phase diagram shows a eutectic at 105—110°C when the sulfur content is 98—99 atom % (94—98 wt %). TeUurium—sulfur aUoys have semiconductor properties (see Semiconductors). Bands attributed to teUurium sulfide [16608-21 -2] TeS, molecules have been observed. 

Tellurium Selenides. TeUurium selenides or selenium teUurides are unknown. The molten elements are miscible in aU proportions. The mixtures are not simple soUd solutions but have a complex stmcture. Like the sulfides, the selenides exhibit semiconductor properties. 

Organosulfur Adsorbates on Metal and Semiconductor Surfaces. Sulfur compounds (qv) and selenium compounds (qv) have a strong affinity for transition metal surfaces (206—211). The number of reported surface-active organosulfur compounds that form monolayers on gold includes di- -alkyl sulfide (212,213), di- -alkyl disulfides (108), thiophenols (214,215), mercaptopyridines (216), mercaptoanilines (217), thiophenes (217), cysteines (218,219), xanthates (220), thiocarbaminates (220), thiocarbamates (221), thioureas (222), mercaptoimidazoles (223—225), and alkaneselenoles (226) (Fig. 11). However, the most studied, and probably most understood, SAM is that of alkanethiolates on Au(lll) surfaces. 

The intermetallic compounds with Group 16 (VIA) elements including CdS, CdSe, and CdTe have interesting semiconductor properties for photoconductors, photovoltaic cells, and ir windows. Cadmium sulfide is widely used as a phosphor in television tubes. 

The cadmium chalcogenide semiconductors (qv) have found numerous appHcations ranging from rectifiers to photoconductive detectors in smoke alarms. Many Cd compounds, eg, sulfide, tungstate, selenide, teUuride, and oxide, are used as phosphors in luminescent screens and scintiUation counters. Glass colored with cadmium sulfoselenides is used as a color filter in spectroscopy and has recently attracted attention as a third-order, nonlinear optical switching material (see Nonlinear optical materials). DiaLkylcadmium compounds are polymerization catalysts for production of poly(vinyl chloride) (PVC), poly(vinyl acetate) (PVA), and poly(methyl methacrylate) (PMMA). Mixed with TiCl, they catalyze the polymerization of ethylene and propylene. 

Many metal sulfides have important physical properties.They range from insulators, through semiconductors to metallic conductors of electricity, and some are even superconductors. 

The sulfides have been less thoroughly examined than the oxides but it is clear that a number of stable phases can be produced and nonstoichiometry is again prevalent (p. 679). The most important are the disulfides, which are semiconductors with metallic lustre. TiS2 and ZrS2 have the Cdl2 structure (p. 1211) in which the cations occupy the octahedral sites between alternate layers of hep anions. 

Metal-semiconductor transitions, 6, 135 Metal sulfides phenolysis, 2, 342... 

On the basis of our theoretical considerations and preliminary experimental work, it is hoped that fast processes of charge carriers will become directly measurable in functioning photoelectrochemical cells, Typical semiconductor electrodes are not the only systems accessible to potential-dependent microwave transient measurements. This technique may also be applied to the interfacial processes of semimetals (metals with energy gaps) or thin oxide or sulfide layers on ordinary metal electrodes. 

Mercuric sulfide (HgS) is dimorphic. The more common form, cinnabar (red a-form), has a distorted RS, trigonal structure which is unique among the monosulfides, for the crystal is built of helical chains in which Hg has two nearest neighbors at 2.36 A, two more at 3.10 A, and two at 3.30 A. Bulk a-HgS is a large-gap semiconductor (2.1 eV), transparent in the red and near IR bands. The rare, black mineral metacinnabarite is the 3-HgS polymorph with a ZB structure, in which Hg forms tetrahedral bonds. Upon heating, 3-HgS is converted to the stable a-form. The ZB structure of HgS is stabilized under a few percent admixture of transition metals, which replace Hg ions in the lattice. 

Low-temperature solvents are not readily available for many refractory compounds and semiconductors of interest. Molten salt electrolysis is utilized in many instances, as for the synthesis and deposition of elemental materials such as Al, Si, and also a wide variety of binary and ternary compounds such as borides, carbides, silicides, phosphides, arsenides, and sulfides, and the semiconductors SiC, GaAs, and GaP and InP [16], A few available reports regarding the metal chalcogenides examined in this chapter will be addressed in the respective sections. Let us note here that halide fluxes provide a good reaction medium for the crystal growth of refractory compounds. A wide spectrum of alkali and alkaline earth halides provides... 

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