Semiconductor silicon

Shimura F (ed) 1994 Oxygen in Silicon (Semiconductors and Semimetals 42) (Boston Academic)... 

For the manufacture of silicon semiconductor devices, oxide thicknesses of from <10 to >1000 nm are required on sHces of single-crystal silicon. These oxide layers are formed at elevated temperatures, generally at about 1000°C, in an atmosphere of either oxygen or steam. Usually the oxidation is at atmospheric pressure, but sometimes, to speed the oxidation rate, pressures of several atmospheres are used. Oxidation consumes a silicon thickness equal to about 0.4 the thickness of the oxide produced (grown). The thickness of the oxide, V (4) is approximately given by equation 1 ... 

W. R. Runyan, Silicon Semiconductor Technolog) Texas Instmment Electronics Series, McGraw-HiU Book Co., Inc., New York, 1965. 

Arsenic from the decomposition of high purity arsine gas may be used to produce epitaxial layers of III—V compounds, such as Tn As, GaAs, AlAs, etc, and as an n-ty e dopant in the production of germanium and silicon semiconductor devices. A group of low melting glasses based on the use of high purity arsenic (24—27) were developed for semiconductor and infrared appHcations. 

When the structure of a metal changes, it is because there is a driving force for the change. When iron goes from b.c.c. to f.c.c. as it is heated, or when a boron dopant diffuses into a silicon semiconductor, or when a powdered superalloy sinters together, it is because each process is pushed along by a driving force. 

Neutron activation also has been combined with accelerator mass spectrometry and has been demonstrated to have part-per-billion sensitivities fer bulk nitrogen analysis in silicon. This combination was also used to obtain depth profile of Cl in silicon semiconductors. ... 

Dominey RN, Lewis NS, Bruce JA, Bookbinder DC, Wrighton MS (1982) Improvement of photoelectrochemical hydrogen generation by surface modification of p-type silicon semiconductor photo-cathodes. J Am Chem Soc 104 467 82... 

I. Pankove, Ed., Hydrogenated Amorphous Silicon, Semiconductors and Semimetals, Vol. 21, Parts A-D, Academic Press, Orlando, FL, 1984. 

Fig. 2.3 Schematic structure of a silicon semiconductor of (A) n type and (B) p type together with the energy level array. (According to C. Kittel)... 

Pure terephthalic acid (PTA) production, exhaust from, 70 105—106 Pure water, in silicon semiconductor technology, 22 232 PUREX flow sheet, 70 676 Purex process, 70 789 Pure zirconium... 

Extrinsic Semiconductors are materials that contain donor or acceptor species (called doping substances) that provide electrons to the conduction band or holes to the valence band. If donor impurities (donating electrons) are present in minerals, the conduction is mainly by way of electrons, and the material is called an n-type semiconductor. If acceptors are the major impurities present, conduction is mainly by way of holes and the material is called a p-type semiconductor. For instance in a silicon semiconductor elements from a vertical row to the right of Si of... 

Wright of Advanced Micro Devices discusses the use of Raman microspectroscopy to measure the integrity of a film on semiconductor wafers during manufacture in US patent 6,509,201 and combined the results with other data for feed-forward process control [181]. Yield is improved by providing a tailored repair for each part. Hitachi has filed a Japanese patent application disclosing the use of Raman spectroscopy to determine the strain in silicon semiconductor substrates to aid manufacturing [182]. Raman spectroscopy has a well established place in the semiconductor industry for this and other applications [183]. 

Silicon s tetravalent pyramid crystalline structure, similar to tetravalent carbon, results in a great variety of compounds with many practical uses. Crystals of sihcon that have been contaminated with impurities (arsenic or boron) are used as semiconductors in the computer and electronics industries. Silicon semiconductors made possible the invention of transistors at the Bell Labs in 1947. Transistors use layers of crystals that regulate the flow of electric current. Over the past half-century, transistors have replaced the vacuum tubes in radios, TVs, and other electronic equipment that reduces both the devices size and the heat produced by the electronic devices. 

Nakato Y, Tsumura A, Tsubomura H (1982) Efficient photoelectrochemical conversion of solar energy with n-type silicon semiconductor electrodes surface doped with IIIA elements. Chem Lett 1071-1074... 

The success has been primarily due to the developments that occurred in the early 1970s (3) at the University of Dundee (United Kingdom) where it was demonstrated that a device-quality amorphous silicon semiconductor ( -Si) could be produced with the following features low concentration of defects, high photosensitivity, ability to be doped, and no size limitation. 

Kern, W. and Puotinen, D. A. Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology. RCA Review 31, 187-206 (1970). 

Film growth -of amorphous silicon [SEMICONDUCTORS - AMORPHOUSSEMICONDUCTORS](Vol21)... 

Misra A., Finnie I., 1979, On the scribing and subsequent fracturing of silicon semiconductor wafers, J. Mater. Sci., 14, 2567-2574. 

A silicon-semiconductor-radiation detector of a layer of p-type silicon in contact with a layer of n-type Si is shown in Figure 18.15. What happens when this p-n junction is created The electrons from the n-type silicon will migrate across the junction and fill the holes in the p-type silicon to create an area around the p-n junction in which there is no excess of holes or electrons. (We say that a depletion region has been formed around the junction.) Imagine that we apply a positive voltage to the n-type material and a negative voltage to the p-type material (the junction is said to be reverse biased). The electrons will be pulled farther... 

Applications for electroplated indium coatings include indium bump bonding for silicon semiconductor die attachment to packaging substrates and miscellaneous applications where the physical or chemical properties of indium metal are desired as a plated deposit. 

Field-effect transistors (Appendix C) are miniature cousins of the Kelvin probe. The most common is the insulated gate field-effect transistor. The heart of the insulated gate field-effect transistor is the Metal-Insulator-Semiconductor (MIS) capacitor. Let us form this capacitor from palladium (to be modulated by hydrogen), silicon dioxide (insulator), and p-type silicon (semiconductor), and examine the energy levels in this structure (Fig. 6.32). 

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