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Hydrogen termination

The (111) surface with an almost complete termination by SiH, indicating atomic scale flatness of the surface, can result from different treatment procedures including a [Pg.55]

TABLE 2.8. Studies on Hydrogen Termination of Silicon Surface [Pg.56]

Hydrogen termination of the silicon surface appears to occur over the whole pH range from acidic to basic whenever the surface is not covered with an oxide film. The silicon surface is found to be covered with hydrogen in alkaline solution even under [Pg.56]

FIGURE 2.10. The dependence of hydrogen absorption on immersion time. Each value is normalized by that at 0 s of immersion. After Watanabe et (Reprinted with permission of The Physical Society of Japan.) [Pg.57]

In addition to water rinse, certain other procedures also produce flatter surfaces. It has been reported that a BHF-treated surface is flatter than one treated with HE. A photocurrent-assisted etching followed by a dark current transient has been found to reduce microscopic roughness. A multistep process, involving formation of an anodic oxide, dissolution in 0.2 M NH4F at pH 4 and then at pH 4.9, produced a completely monohydride-terminated (111) surface.  [Pg.58]


Fig. 23. When lithium inserts in hydrogen-containing carbon, some lithium atoms bind on the hydrogen-terminated edges of hexagonal carbon fragments. This causes a change from sp to sp bonding [37]. Fig. 23. When lithium inserts in hydrogen-containing carbon, some lithium atoms bind on the hydrogen-terminated edges of hexagonal carbon fragments. This causes a change from sp to sp bonding [37].
Adding hydrogen terminates the propagating polymer. The reaction between the polymer complex and the excess triethylaluminum also terminates the polymer. Treatment with alcohol or water releases the polymer ... [Pg.312]

Scheme 20 Hydrosilylation of an alkene by hydrogen-terminated Si(l 11) surface. Scheme 20 Hydrosilylation of an alkene by hydrogen-terminated Si(l 11) surface.
The radical-based functionalization of silicon surfaces is a growing area because of the potential practical applications. Although further knowledge is needed, the scope, limitations, and mechanism of these reachons are sufficiently well understood that they can be used predictably and reliably in the modification of hydrogen-terminated silicon surfaces. The radical chemistry of (TMSlsSiH has frequently served as a model in reactions of both hydrogen-terminated porous and flat silicon surfaces. We trust that the survey presented here will serve as a platform to expand silicon radical chemistry with new and exciting discoveries. [Pg.176]

Si-C formation technique with hydrogen-terminated silicon substrates can also be used as the covalent attachment of nanomaterials onto silicon surface. The possibility of assembling nanomaterials in order is strongly desired in order to enable efficient utilization of their unique nano-sized properties. Ordered arranging and position controlling of nanomaterials on solid substrates especially on silicon surface have been intensively studied [10]. In this manuscript, the nanoparticle immobilization by thermal Si-C formation will be discussed [11]. [Pg.453]

In 1993, Linford firstly reported a quite useful method to prepare monolayers of alkyl chains by thermal hydros-ilylation of hydrogen-terminated silicon surfaces [25]. Alkyl chains are covalently bound to Si surface by Si-C bonds. This thermal hydrosilylation could be attributed to a free-radical process with 1-alkene. First, a diacyl peroxide initiator was used to produce free radicals. However, at higher temperature, only hydrogen-terminated silicon and a neat solution of 1-alkene or 1-alkyne can form Si-C linkages [26]. Furthermore, lately it is found that such Si-C covalent links can be observed even in dilute solutions of 1-alkenes [27]. In that case, the density of monolayer packing strongly depends on the reaction temperature. [Pg.456]

Also, photochemical approach can be used for hydrosilylation on hydrogen-terminated silicon. Light sources with a wavelength at ca. 350 nm can be employed for radical formation under degassed condition [28]. The monolayer packing density can be controlled by the wavelength of the irradiation. The shorter wavelength makes shorter irradiation time and forms more densely packed monolayers. [Pg.456]

Immobilization of Gold Nanoparticles onto Hydrogen-Terminated Silicon Surface by Si-C Covalent Bonds... [Pg.456]

On such very useful hydrogen-terminated surfaces, immobilization of a,(B-alkenethiol-stabilized gold nanoparticles was carried out. The thermal hydrosilylation was selected for this immobilization. Under dry nitrogen... [Pg.456]

Wet preparation of metal nanoparticles and their covalent immobilization onto silicon surface has been surveyed in this manuscript. Thiol-metal interaction can be widely used in order to functionalize the surface of metal nanoparticles by SAM formation. Various thiol molecules have been used for this purpose. The obtained functionalized particles can be purified to avoid the effect of unbounded molecules. On the other hand, hydrogen-terminated silicon surface is a good substrate to be covered by Si-C covalently bonded monolayer and can be functionalized readily by this link formation. Nanomaterials, such as biomolecules or nanoparticles, can be immobilized onto silicon surface by applying this monolayer formation system. [Pg.457]

Robertson has summarized the three recent classes of models of a-Si H deposition [439]. In the first one, proposed by Ganguly and Matsuda [399, 440], the adsorbed SiHa radical reacts with the hydrogen-terminated silicon surface by abstraction or addition, which creates and removes dangling bonds. They further argue that these reactions determine the bulk dangling bond density, as the surface dangling bonds are buried by deposition of subsequent layers to become bulk defects. [Pg.130]

FIG. 52. Schematic respresenlalion of the processes that a SiH3 may undergo at a hydrogen-terminated fl-Si H surface. (After J. Robertson, J Api>l. Phys. S7. 2608 (2000).]... [Pg.132]

Fig. 59. Molecular modification of semiconductor silicon surfaces. Removal of the oxide generates a hydrogen-terminated layer that reacts with a range of molecular functional groups including alkenes. [Pg.150]

In the presence of hydrogen termination also occurs by the process ... [Pg.297]

Why do we believe that a Cu monolayer is inserted between SAM and gold substrate The 2D-deposit grows and dissolves extremely slowly. Another indication is that the 2D deposit is very stable and shows no displacement by the scanning tip. Cu clusters on top of an alkanethiol-SAM would be only weakly bound and should be easily pushed away by the tip at higher tunnel currents, very much like metal clusters on a hydrogen-terminated Si(lll) surface, which for that very reason are difficult to image by STM (or AFM [122]). And finally, the cyclic voltammograms (Fig. 33) point to the formation of a buried monolayer . [Pg.146]

When applied to silicon, both approaches suffer from problems common to small-basis-set techniques, namely they do not treat the conduction bands accurately. They can be parametrized to yield the proper band gap, and the defect properties seem not to be extremely sensitive to this factor. These approaches can be modified into supercell or cyclic-cluster forms, although most applications to date have involved finite clusters with hydrogen terminators. [Pg.534]

There is a marked difference in chemical reactivity between bridging and terminal hydrogens. Terminally bonded hydrogens readily react in a similar manner to that observed for mononuclear hydrides. Thus reactions with chlorinated hydrocarbons such as carbon tetrachloride yield the chloro cluster complexes and chloroform. In contrast, bridging hydrides are stable and may be studied in chlorinated sol-... [Pg.276]

Many other mechanisms lead to energy dissipation, although they may be less universal than those related to boundary lubricant-induced geometric frustration. Chemical changes in lubricant molecules, reversible or irreversible, produce heat. Examples are configurational changes in hydrogen-terminated... [Pg.73]


See other pages where Hydrogen termination is mentioned: [Pg.492]    [Pg.346]    [Pg.117]    [Pg.163]    [Pg.163]    [Pg.163]    [Pg.172]    [Pg.173]    [Pg.173]    [Pg.174]    [Pg.176]    [Pg.26]    [Pg.76]    [Pg.453]    [Pg.456]    [Pg.456]    [Pg.456]    [Pg.456]    [Pg.457]    [Pg.457]    [Pg.457]    [Pg.130]    [Pg.131]    [Pg.146]    [Pg.188]    [Pg.530]    [Pg.348]    [Pg.367]    [Pg.393]    [Pg.58]    [Pg.223]   
See also in sourсe #XX -- [ Pg.25 , Pg.53 , Pg.78 , Pg.118 , Pg.142 , Pg.155 ]

See also in sourсe #XX -- [ Pg.55 , Pg.56 , Pg.57 , Pg.58 , Pg.59 , Pg.229 , Pg.242 , Pg.444 ]




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