Semiconductor anodic oxidation

The photo-Kolbe reaction is the decarboxylation of carboxylic acids at tow voltage under irradiation at semiconductor anodes (TiO ), that are partially doped with metals, e.g. platinum [343, 344]. On semiconductor powders the dominant product is a hydrocarbon by substitution of the carboxylate group for hydrogen (Eq. 41), whereas on an n-TiOj single crystal in the oxidation of acetic acid the formation of ethane besides methane could be observed [345, 346]. Dependent on the kind of semiconductor, the adsorbed metal, and the pH of the solution the extent of alkyl coupling versus reduction to the hydrocarbon can be controlled to some extent [346]. The intermediacy of alkyl radicals has been demonstrated by ESR-spectroscopy [347], that of the alkyl anion by deuterium incorporation [344]. With vicinal diacids the mono- or bisdecarboxylation can be controlled by the light flux [348]. Adipic acid yielded butane [349] with levulinic acid the products of decarboxylation, methyl ethyl-... 

Electric Breakdown in Anodic Oxide Films Physics and Applications of Semiconductor Electrodes Covered with Metal Clusters Analysis of the Capacitance of the Metal-Solution Interface. Role of the Metal and the Metal-Solvent Coupling Automated Methods of Corrosion Measurement... 

In addition to the stoichiometry of the anodic oxide the knowledge about electronic and band structure properties is of importance for the understanding of electrochemical reactions and in situ optical data. As has been described above, valence band spectroscopy, preferably performed using UPS, provides information about the distribution of the density of electronic states close to the Fermi level and about the position of the valence band with respect to the Fermi level in the case of semiconductors. The UPS data for an anodic oxide film on a gold electrode in Fig. 17 clearly proves the semiconducting properties of the oxide with a band gap of roughly 1.6 eV (assuming n-type behaviour). 

The HF tester is a commercial safety tool for sensing whether an unidentified liquid contains HF [2], It shows in an exemplary way how the electrochemical properties of a silicon electrode, namely its I-V curve in HF, can be applied for sensing. The ability to dissolve an anodic oxide layer formed on silicon electrodes in aqueous electrolytes under anodic bias is a unique property of HF. HF is therefore the only electrolyte in which considerable, steady-state anodic currents are observed, as shown schematically in Fig. 3.1. This effect has been exploited to realize a simple but effective safety sensor, which allows us to check within seconds if a liquid contains HF. This is useful for safety applications, because HF constitutes a major health hazard in semiconductor manufacturing, as discussed in Section 1.2. 

Figure S-4S shows the polarization curves observed, as a function of the film thickness, for the anodic and cathodic transfer reactions of redox electrons of hydrated ferric/ferrous cyano-complex particles on metallic tin electrodes that are covered with an anodic tin oxide film of various thicknesses. The anodic oxide film of Sn02 is an n-type semiconductor with a band gap of 3.7 eV this film usually contains a donor concentration of 1x10" ° to lxl0 °cm °. For the film thicknesses less than 2.5 nm, the redox electron transfer occurs directly between the redox particles and the electrode metal the Tafel constant, a, is close to 0.5 both in the anodic and in the cathodic curves, indicating that the film-covered tin electrode behaves as a metallic tin electrode with the electron transfer current decreasing with increasing film thickness.

Equation 9—49 is the anodic transfer of surface cation into aqueous solution (cation dissolution) and Eqn. 9-60 is the anodic oxidation (hole capture) of surface anion producing molecules ofX2, i (e.g. gaseous oxygen molecules irom oxide ions). Electric neutrality requires that the rate of cation dissolution equals the rate of anion oxidation hence, the rate of the oxidative dissolution of semiconductor electrode can be represented by the anodic hole current for the oxidation of surface anions. 

Figure 9-16 illustrates the polarization curves for the anodic oxidative and the cathodic reductive dissolution of ionic compound semiconductors. The anodic oxidative dissolution proceeds readily at p-type semiconductor electrodes in which the mqjority charge carriers are holes whereas, the cathodic reductive dissolution proceeds readily at n-type semiconductor electrodes in which the majority charge carriers are electrons. 

Fig. 9-16. Polarization curves of anodic oxidative dissolution and cathodic reductive dissolution of semiconductor electrodes of an ionic compound MX iiixcp) (iMxh )== anodic oxidative (cathodic reductive) dissolution current solid curve = band edge level pinning at the electrode interface, dashed curve = Fermi level pinning.

Figure 8. Schematic showing energy correlations at equilibrium for cell with two semiconductor electrodes in contact with aqueous solution and through an external circuit with each other. An n-type semiconductor anode and a p-type cathode are shown to left and right, respectively. In each case the minimum light energy to give rise to a photocurrent is indicated by hvmin (n) and hvmin (p), respectively. The energies available for oxidation and reduction are also indicated. and Ev(n) are conduction and valence band edges for the n-type material and Ec(p) and E fp) are those for the p-type material. Other symbols as in Figure 7.

This chapter considers the fabrication of oxide semiconductor photoanode materials possessing tubular-form geometries and their application to water photoelectrolysis due to their demonstrated excellent photo-conversion efficiencies particular emphasis is given in this chapter to highly-ordered Ti02 nanotube arrays made by anodic oxidation of titanium in fluoride based electrolytes. Since photoconversion efficiencies are intricately tied to surface area and architectural features, the ability to fabricate nanotube arrays of different pore size, length, wall thickness, and composition are considered, with fabrication and crystallization variables discussed in relationship to a nanotube-array growth model. 

Surface layers of silicon oxide are important in semiconductor device fabrication as interlayer dielectrics for capacitors, isolation of conducting layers, or as masking materials. However, anodic oxides, due to their relatively poor electrical properties, breakdown voltage, and leakage current, have not yet found much use in device technology, and cannot compete with thermal oxides obtained at high temperatures of 700 to 900 °C. 

Anodic oxidation of pyrrole and N-substituted pyrroles results in the formation of polypyrroles in an oxidized state, which can be useful for the preparation of conducting organic polymers.185-188 Oxidation of 2,5-di-substituted pyrroles produces soluble products and no layer of polymers.187 One of the proposed applications of such a layer of conducting polymer is the protection of semiconductor electrodes from photocorrosion.189-191... 

The results of this kinetic analysis have been included in Table I. It can be seen that, if both the anodic decomposition of the semiconductor and the anodic oxidation of the competing reactant would occur by irreversible hole-capture steps ((L)(H)(I) or (M)(H)(1)), as was hitherto generally accepted, the stabilization should be independent of light intensity, in contradiction with the results described above. The mechanism in which the reducing agent reacts by donating an electron to a localized surface hole ((L)(X)) leads to an expression in which s is a function of the variable (y/j) only. The three other mechanisms considered lead to the relationship of the type (18), in which s is a function of (y2/j). 

Electrochemical reactions at metal electrodes can occur at their redox potential if the reaction system is reversible. In cases of semiconductor electrodes, however, different situations are often observed. For example, oxidation reactions at an illuminated n-type semiconductor electrode commence to occur at around the flat-band potential Ef j irrespective of the redox potential of the reaction Ergdox Efb is negative of Ere 0 (1 2,3). Therefore, it is difficult to control the selectivity of the electrochemical reaction by controlling the electrode potential, and more than one kind of electrochemical reactions often occur competitively. The present study was conducted to investigate factors which affect the competition of the anodic oxidation of halide ions X on illuminated ZnO electrodes and the anodic decomposition of the electrode itself. These reactions are given by Eqs 1 and 2, respectively ... 

In the development of photoelectrochemical (PEC) solar cells, one of the most difficult problems is the corrosion problem. In any solvent, but particularly in solvents with water present, anodic currents flowing from the solid to the solution will usually lead to corrosion. Specifically the corrosion will take the form of anodic oxidation of the semiconductor, with the products remaining as a film, dissolving into the solution, or evolving as a gas. Any such action will degrade the solar cell. 

Of particular interest in this context has been the finding that the Kolbe reaction, the anodic oxidation of carboxylic acids (Equation 1) (2), can be made to occur at n-type oxide semiconductor photoanodes to the virtual exclusion of oxygen formation (3,4,5). 

In contrast to anodic sites, which tend to be localized to specific regions of the surface, the cathodic part of the process can occur almost anywhere. Because metallic oxides are usually semiconductors, most oxide coatings do not inhibit the flow of electrons to the surface, so almost any region that is exposed to O2 or to some other electron acceptor can act as a cathode. 

The plasma ionic liquid interface is interesting from both the fundamental and the practical point of view. From the more fundamental point of view, this interface allows direct reactions between free electrons from the gas phase without side reactions - once inert gases are used for the plasma generation. From the practical point of view, ionic liquids are vacuum-stable electrolytes that can favorably be used as solvents for compounds to be reduced or oxidised by plasmas. Plasma cathodic reduction may be used as a novel method for the generation of metal or semiconductor particles, if degradation reactions of the ionic liquid can be suppressed sufficiently. Plasma anodic oxidation with ionic liquids has yet to be explored. In this case the ionic liquid is cathodically polarized causing an enhanced plasma ion bombardment, that leads to secondary electron emission and fast decomposition of the ionic liquid. 

The oxide layer of a metal such as copper may be seen as a semiconductor with a band gap, which may be measured by absorption spectroscopy or photocurrent spectroscopy and photopotential measurements. Valuable additional data are obtained by Schottky Mott plots, i.e. the C 2 E evaluation of the potential dependence of the differential capacity C. For thin anodic oxide layers usually electronic equilibrium is assumed with the same position of the Fermi level within the metal and the oxide layer. The energetic position of the Fermi level relative to the valence band (VB) or conduction band (CB) depends on the p- or n-type doping. Anodic CU2O is a p-type semiconductor with cathodic photocurrents, whereas most passive layers have n-character. 

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