Majority charge carriers

It is unclear at this time whether this difference is due to the different anions present in the non-haloaluminate ionic liquids or due to differences in the two types of transport number measurements. The apparent greater importance of the cation to the movement of charge demonstrated by the transport numbers (Table 3.6-7) is consistent with the observations made from the diffusion and conductivity data above. Indeed, these data taken in total may indicate that the cation tends to be the majority charge carrier for all ionic liquids, especially the allcylimidazoliums. However, a greater quantity of transport number measurements, performed on a wider variety of ionic liquids, will be needed to ascertain whether this is indeed the case. 

When the difference A c0 - A 0 becomes positive, the interphase is depleted of majority charge carriers (electrons in this case) forming a... 

The equilibration proceeds by electron transfer between the semiconductor and the electrolyte. The solution levels are almost intact ( REdox — redox)> since the number of transferred electrons is negligible relative to the number of the redox system molecules (cox and cred). On the other hand, the energy levels of the semiconductor phase may shift considerably. The region close to the interface is depleted of majority charge carriers and the energy bands are bent upwards or downwards as depicted in Fig. 5.60b. 

Although the conductivity of polyacetylene is generally discussed in terms of solitons, the question of the precise nature of the major charge-carriers continues to be a subject of debate, with conflicting evidence from different experiments. Spectro-electrochemical studies provide evidence that the charge in doped polyacetylene is stored in soliton-like species (although this is not the only possible interpretation [142, 143]), with absorptions in the optical spectra corresponding to transitions to states located at mid-gap [24,89, 119]. The intensity of the interband transitions... 

Due to the relatively high mobility of holes compared with the mobility of electrons in organic materials, holes are often the major charge carriers in OLED devices. To better balance holes and electrons, one approach is to use low WF metals, such as Ca or Ba, protected by a stable metal, such as Al or Ag, overcoated to increase the electron injection efficiency. The problem with such an approach is that the long-term stability of the device is poor due to its tendency to create detrimental quenching sites at areas near the EML-cathode interface. Another approach is to lower the electron injection barrier by introducing a cathode interfacial material (CIM) layer between the cathode material and the organic layer. The optimized thickness of the CIM layer is usually about 0.3-1.0 nm. The function of the CIM is to lower... 

The holes are the majority charge carriers in OLEDs and the hole current is much larger than the electron current in OLEDs, that is,. /h > Je. Thus, the total current Jtot =, /h I /e can be simplified as Jtot, /h. Therefore, Equation 6.2 can be written as... 

More recent quantum-based MD simulations were performed at temperatures up to 2000 K and pressures up to 30 GPa.73,74 Under these conditions, it was found that the molecular ions H30+ and OH are the major charge carriers in a fluid phase, in contrast to the bcc crystal predicted for the superionic phase. The fluid high-pressure phase has been confirmed by X-ray diffraction results of water melting at ca. 1000 K and up to 40 GPa of pressure.66,75,76 In addition, extrapolations of the proton diffusion constant of ice into the superionic region were found to be far lower than a commonly used criterion for superionic phases of 10 4cm2/s.77 A great need exists for additional work to resolve the apparently conflicting data. 

The existence of two types of mobile charge carriers in semiconductors enables us to distinguish between a majority charge carrier transferred from the electrode into the electrolyte and a minority charge carrier injected from the electrolyte into the electrode. Minority carrier injection causes significant reverse currents, but may also contribute to the total current under forward conditions. 

Fig. 8-26. Cathodic iiyectian of minority charge carriers (holes) followed by recomlmation of minority charge carriers (holes) with majority charge carriers in an n-type semiconductor electrode ipr - cathodic current of hole transfer at an interface - current of electron-...

Figure 9-16 illustrates the polarization curves for the anodic oxidative and the cathodic reductive dissolution of ionic compound semiconductors. The anodic oxidative dissolution proceeds readily at p-type semiconductor electrodes in which the mqjority charge carriers are holes whereas, the cathodic reductive dissolution proceeds readily at n-type semiconductor electrodes in which the majority charge carriers are electrons. 

Fig. 10-2. Splitting of Fenni level of electrode, cnsci. into quasi-Fermi levels of electrons, ep, and of holes, pCp, respectively, in a surface layer of photoexcited n-type and p-type semiconductors a shift of quasi-Fermi levels from original Fermi level is greater for minmity charge carriers than for majority charge carriers.

For p-type electrodes in the dark and in the photoexdted state, the concentration of majority charge carriers (holes) is sufficiently great that the Fermi level eptso of the electrode interior nearly equals the quasi-Fermi level of interfacial holes hence, the overvoltage Up sc for the generation and transport of holes in the space charge layer is zero even as the transfer of anodic holes progresses as expressed in Eqn. 10-30 ... 

In low-temperature fuel cells (PEFC, AFC, PAFC), protons or hydroxyl ions are the major charge carriers in the electrolyte, whereas in the high-temperature fuel cells, MCFC, ITSOFC, and TSOFC, carbonate ions and oxygen ions are the charge carriers, respectively. A detailed discussion of these different types of fuel cells is presented in Sections 3 through 8. Major differences between the various cells are shown in Table 1-1. 

As shown in Fig. 3.6, for intrinsic (undoped) semiconductors the number of holes equals the number of electrons and the Fermi energy level > lies in the middle of the band gap. Impurity doped semiconductors in which the majority charge carriers are electrons and holes, respectively, are referred to as n-type and p-type semiconductors. For n-type semiconductors the Fermi level lies just below the conduction band, whereas for p-type semiconductors it lies just above the valence band. In an intrinsic semiconductor tbe equilibrium electron and bole concentrations, no and po respectively, in tbe conduction and valence bands are given by ... 

Depending on the chemical modification of the conjugated core, either n- or p-type behavior is observed, while the fluorine-free acyl analogs behave as either ambipolar or p-type semiconductor. Insertion of the dioxolane group into the thiophene core inverts the majority charge carrier type from electrons (371) to holes (372) in a very similar fashion to 369. The 373 data reveal that n-type activity is recovered with mobility and on-off ratio 0.07 cm2 V 1 s-1 and 106. 

In the previous section on the short-circuit current, it was demonstrated theoretically and experimentally that Isc in conjugated polymer-fullerene solar cells is controlled to a considerable extent by mobility of the majority charge carriers in the cell s active layer [158]. Moreover, activated behavior of charge carrier mobility in conjugated polymers is known to result in higher mobility at higher temperatures (for a review, see [159]). Accordingly,... 

An undoped or pure semiconductor material is called an intrinsic semiconductor. Dopants (or impurities) are often added at very low concentration to modify the type and/or number of charge carriers in the material (i.e., adjust the Fermi level). There are two types of semiconductor materials, n-type in which the majority charge carriers are (negative) electrons, andp-fypein which the majority charge carriers are (positive) holes or electron deficiencies. Most (but not all) semiconducting metal oxides are of the n-type. 

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